DE69229749T2 - Trockenätzverfahren für GaAs - Google Patents

Trockenätzverfahren für GaAs

Info

Publication number
DE69229749T2
DE69229749T2 DE69229749T DE69229749T DE69229749T2 DE 69229749 T2 DE69229749 T2 DE 69229749T2 DE 69229749 T DE69229749 T DE 69229749T DE 69229749 T DE69229749 T DE 69229749T DE 69229749 T2 DE69229749 T2 DE 69229749T2
Authority
DE
Germany
Prior art keywords
gaas
etching process
dry etching
dry
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69229749T
Other languages
English (en)
Other versions
DE69229749D1 (de
Inventor
Shingo Kadomura
Junichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69229749D1 publication Critical patent/DE69229749D1/de
Publication of DE69229749T2 publication Critical patent/DE69229749T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69229749T 1991-10-29 1992-10-28 Trockenätzverfahren für GaAs Expired - Fee Related DE69229749T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP30832791 1991-10-29
JP32461891 1991-12-09
JP32461991 1991-12-09
JP35969191 1991-12-11
JP21522192A JP3298161B2 (ja) 1991-10-29 1992-08-12 ドライエッチング方法

Publications (2)

Publication Number Publication Date
DE69229749D1 DE69229749D1 (de) 1999-09-09
DE69229749T2 true DE69229749T2 (de) 2000-01-13

Family

ID=27529598

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69229749T Expired - Fee Related DE69229749T2 (de) 1991-10-29 1992-10-28 Trockenätzverfahren für GaAs
DE69225190T Expired - Fee Related DE69225190T2 (de) 1991-10-29 1992-10-28 Trockenätzen von GaAs

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69225190T Expired - Fee Related DE69225190T2 (de) 1991-10-29 1992-10-28 Trockenätzen von GaAs

Country Status (4)

Country Link
US (1) US5370769A (de)
EP (2) EP0539963B1 (de)
JP (1) JP3298161B2 (de)
DE (2) DE69229749T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2299893B (en) * 1992-09-10 1997-01-22 Mitsubishi Electric Corp Method for producing a quantum wire structure
JPH06232099A (ja) 1992-09-10 1994-08-19 Mitsubishi Electric Corp 半導体装置の製造方法，半導体装置の製造装置，半導体レーザの製造方法，量子細線構造の製造方法，及び結晶成長方法
JPH06314668A (ja) * 1993-04-30 1994-11-08 Fujitsu Ltd プラズマエッチング方法及びプラズマエッチング装置
US6808647B1 (en) 1999-07-12 2004-10-26 Applied Materials Inc Methodologies to reduce process sensitivity to the chamber condition
US6942816B2 (en) * 2003-02-12 2005-09-13 Lam Research Corporation Methods of reducing photoresist distortion while etching in a plasma processing system
US8581274B2 (en) * 2006-05-01 2013-11-12 Mitsubishi Chemical Corporation Integrated semiconductor light-emitting device and its manufacturing method
JP4999400B2 (ja) * 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
EP2306497B1 (de) * 2009-10-02 2012-06-06 Imec Verfahren zur Herstellung einer Schnittstelle mit wenigen Defekten zwischen einem Dielektrikum und einer III/V-Verbindung
FR3000602B1 (fr) * 2012-12-28 2016-06-24 Commissariat A L Energie Atomique Et Aux Energies Alternatives Procede de gravure d'un materiau dielectrique poreux
US10407716B2 (en) * 2014-03-13 2019-09-10 Duke University Electronic platform for sensing and control of electrochemical reactions
CN114242583B (zh) * 2021-12-22 2023-03-21 江苏第三代半导体研究院有限公司 AlGaN材料的刻蚀方法及其应用

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0336723A (ja) * 1989-07-04 1991-02-18 Fujitsu Ltd 半導体装置の製造方法及び電子サイクロトロン共鳴エッチング装置
JPH04221825A (ja) * 1990-12-24 1992-08-12 Nec Corp 選択ドライエッチング方法

Also Published As

Publication number Publication date
DE69225190D1 (de) 1998-05-28
EP0731499B1 (de) 1999-08-04
EP0539963A3 (en) 1993-06-30
EP0731499A2 (de) 1996-09-11
EP0539963A2 (de) 1993-05-05
DE69225190T2 (de) 1998-12-03
DE69229749D1 (de) 1999-09-09
EP0539963B1 (de) 1998-04-22
JP3298161B2 (ja) 2002-07-02
US5370769A (en) 1994-12-06
JPH05308063A (ja) 1993-11-19
EP0731499A3 (de) 1996-11-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee