DE6922591U - Halbleiterelement - Google Patents

Halbleiterelement

Info

Publication number
DE6922591U
DE6922591U DE6922591U DE6922591U DE6922591U DE 6922591 U DE6922591 U DE 6922591U DE 6922591 U DE6922591 U DE 6922591U DE 6922591 U DE6922591 U DE 6922591U DE 6922591 U DE6922591 U DE 6922591U
Authority
DE
Germany
Prior art keywords
zone
semiconductor wafer
recess
semiconductor element
conical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE6922591U
Other languages
German (de)
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of DE6922591U publication Critical patent/DE6922591U/de
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors

Landscapes

  • Thyristors (AREA)
DE6922591U 1968-07-15 1969-06-06 Halbleiterelement Expired DE6922591U (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1055368A CH485324A (de) 1968-07-15 1968-07-15 Halbleiterelement

Publications (1)

Publication Number Publication Date
DE6922591U true DE6922591U (de) 1971-03-18

Family

ID=4364431

Family Applications (2)

Application Number Title Priority Date Filing Date
DE6922591U Expired DE6922591U (de) 1968-07-15 1969-06-06 Halbleiterelement
DE19691928787 Pending DE1928787A1 (de) 1968-07-15 1969-06-06 Halbleiterelement

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19691928787 Pending DE1928787A1 (de) 1968-07-15 1969-06-06 Halbleiterelement

Country Status (7)

Country Link
AT (1) AT278907B (cs)
CH (1) CH485324A (cs)
DE (2) DE6922591U (cs)
FR (1) FR2012977A7 (cs)
GB (1) GB1220315A (cs)
NL (1) NL6812691A (cs)
SE (1) SE354381B (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7122865B2 (en) 2003-06-12 2006-10-17 Siltronic Ag SOI wafer and process for producing it

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60250670A (ja) * 1984-05-25 1985-12-11 Mitsubishi Electric Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7122865B2 (en) 2003-06-12 2006-10-17 Siltronic Ag SOI wafer and process for producing it

Also Published As

Publication number Publication date
DE1928787A1 (de) 1970-11-12
CH485324A (de) 1970-01-31
NL6812691A (cs) 1970-01-19
SE354381B (cs) 1973-03-05
FR2012977A7 (cs) 1970-03-27
AT278907B (de) 1970-02-25
GB1220315A (en) 1971-01-27

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