DE69224275D1 - MOS-Transistor mit integrierter Zener-Schutzdiode - Google Patents

MOS-Transistor mit integrierter Zener-Schutzdiode

Info

Publication number
DE69224275D1
DE69224275D1 DE69224275T DE69224275T DE69224275D1 DE 69224275 D1 DE69224275 D1 DE 69224275D1 DE 69224275 T DE69224275 T DE 69224275T DE 69224275 T DE69224275 T DE 69224275T DE 69224275 D1 DE69224275 D1 DE 69224275D1
Authority
DE
Germany
Prior art keywords
mos transistor
protection diode
integrated zener
zener protection
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69224275T
Other languages
English (en)
Other versions
DE69224275T2 (de
Inventor
Jean Jimenez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Application granted granted Critical
Publication of DE69224275D1 publication Critical patent/DE69224275D1/de
Publication of DE69224275T2 publication Critical patent/DE69224275T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69224275T 1991-11-21 1992-11-17 MOS-Transistor mit integrierter Zener-Schutzdiode Expired - Fee Related DE69224275T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9114753A FR2684240B1 (fr) 1991-11-21 1991-11-21 Transistor mos a zener de protection integree.

Publications (2)

Publication Number Publication Date
DE69224275D1 true DE69224275D1 (de) 1998-03-05
DE69224275T2 DE69224275T2 (de) 1998-05-14

Family

ID=9419466

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69224275T Expired - Fee Related DE69224275T2 (de) 1991-11-21 1992-11-17 MOS-Transistor mit integrierter Zener-Schutzdiode

Country Status (5)

Country Link
US (1) US5357126A (de)
EP (1) EP0543745B1 (de)
JP (1) JPH05251698A (de)
DE (1) DE69224275T2 (de)
FR (1) FR2684240B1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3173268B2 (ja) * 1994-01-06 2001-06-04 富士電機株式会社 Ｍｉｓ電界効果トランジスタを備えた半導体装置
US5519242A (en) * 1994-08-17 1996-05-21 David Sarnoff Research Center, Inc. Electrostatic discharge protection circuit for a NMOS or lateral NPN transistor
FR2734406B1 (fr) * 1995-05-19 1997-08-01 Sgs Thomson Microelectronics Element de protection de circuit integre de type mos
US5741737A (en) * 1996-06-27 1998-04-21 Cypress Semiconductor Corporation MOS transistor with ramped gate oxide thickness and method for making same
US5897354A (en) * 1996-12-17 1999-04-27 Cypress Semiconductor Corporation Method of forming a non-volatile memory device with ramped tunnel dielectric layer
JP3090081B2 (ja) * 1997-03-12 2000-09-18 日本電気株式会社 半導体装置
JP4055358B2 (ja) * 2000-12-12 2008-03-05 サンケン電気株式会社 半導体装置及びその製造方法
JP2002305299A (ja) * 2001-04-05 2002-10-18 Mitsubishi Electric Corp 半導体装置及びその製造方法
US7700977B2 (en) * 2007-06-21 2010-04-20 Intersil Americas Inc. Integrated circuit with a subsurface diode
US7666751B2 (en) * 2007-09-21 2010-02-23 Semiconductor Components Industries, Llc Method of forming a high capacitance diode and structure therefor
JP5925419B2 (ja) * 2010-03-25 2016-05-25 エスアイアイ・セミコンダクタ株式会社 オフトラ型ｅｓｄ保護素子およびその製造方法
US11131782B2 (en) 2018-11-12 2021-09-28 Stmicroelectronics (Crolles 2) Sas Ionizing radiation detector
US10978443B2 (en) 2019-06-06 2021-04-13 Texas Instruments Incorporated Zener-triggered transistor with vertically integrated Zener diode
CN115632031B (zh) * 2022-12-21 2023-03-28 泰科天润半导体科技（北京）有限公司 集成栅保护机制的平面栅碳化硅mosfet的制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132673A (ja) * 1983-01-19 1984-07-30 Nissan Motor Co Ltd Ｍｏｓトランジスタ
JPS6020560A (ja) * 1983-07-15 1985-02-01 Hitachi Ltd 半導体装置
JPH0685441B2 (ja) * 1986-06-18 1994-10-26 日産自動車株式会社 半導体装置
US5008723A (en) * 1989-12-29 1991-04-16 Kopin Corporation MOS thin film transistor
US5103425A (en) * 1991-03-11 1992-04-07 Motorola, Inc. Zener regulated programming circuit for a nonvolatile memory

Also Published As

Publication number Publication date
EP0543745A1 (de) 1993-05-26
JPH05251698A (ja) 1993-09-28
US5357126A (en) 1994-10-18
FR2684240B1 (fr) 1994-02-18
EP0543745B1 (de) 1998-01-28
DE69224275T2 (de) 1998-05-14
FR2684240A1 (fr) 1993-05-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee