DE69224038T2 - Dünnfilmanordnung mit einer leitenden Verbindungsschicht - Google Patents

Dünnfilmanordnung mit einer leitenden Verbindungsschicht

Info

Publication number
DE69224038T2
DE69224038T2 DE1992624038 DE69224038T DE69224038T2 DE 69224038 T2 DE69224038 T2 DE 69224038T2 DE 1992624038 DE1992624038 DE 1992624038 DE 69224038 T DE69224038 T DE 69224038T DE 69224038 T2 DE69224038 T2 DE 69224038T2
Authority
DE
Germany
Prior art keywords
thin film
tie layer
film assembly
conductive tie
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1992624038
Other languages
English (en)
Other versions
DE69224038D1 (de
Inventor
Ichiro Ohno
Junji Shiota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP32677791A external-priority patent/JP3257001B2/ja
Priority claimed from JP32677391A external-priority patent/JP3245612B2/ja
Priority claimed from JP32677591A external-priority patent/JP3245614B2/ja
Priority claimed from JP32677491A external-priority patent/JP3245613B2/ja
Priority claimed from JP35563391A external-priority patent/JP3282204B2/ja
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Application granted granted Critical
Publication of DE69224038D1 publication Critical patent/DE69224038D1/de
Publication of DE69224038T2 publication Critical patent/DE69224038T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
DE1992624038 1991-11-15 1992-11-12 Dünnfilmanordnung mit einer leitenden Verbindungsschicht Expired - Fee Related DE69224038T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP32677791A JP3257001B2 (ja) 1991-11-15 1991-11-15 多層配線板及び多層配線板の製造方法
JP32677391A JP3245612B2 (ja) 1991-11-15 1991-11-15 多層配線板の製造方法
JP32677591A JP3245614B2 (ja) 1991-11-15 1991-11-15 薄膜素子の製造方法
JP32677491A JP3245613B2 (ja) 1991-11-15 1991-11-15 薄膜素子の製造方法
JP35563391A JP3282204B2 (ja) 1991-12-24 1991-12-24 アルミニウム系合金膜の成膜方法

Publications (2)

Publication Number Publication Date
DE69224038D1 DE69224038D1 (de) 1998-02-19
DE69224038T2 true DE69224038T2 (de) 1998-04-23

Family

ID=27531154

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1992624038 Expired - Fee Related DE69224038T2 (de) 1991-11-15 1992-11-12 Dünnfilmanordnung mit einer leitenden Verbindungsschicht

Country Status (3)

Country Link
EP (1) EP0542271B1 (de)
DE (1) DE69224038T2 (de)
HK (1) HK1013520A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0731507A1 (de) * 1995-03-08 1996-09-11 International Business Machines Corporation Elektrodenmaterial
JP3213196B2 (ja) * 1995-03-08 2001-10-02 日本アイ・ビー・エム株式会社 配線材料、金属配線層の形成方法
USRE45481E1 (en) 1995-10-12 2015-04-21 Kabushiki Kaisha Toshiba Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same
JP4137182B2 (ja) 1995-10-12 2008-08-20 株式会社東芝 配線膜形成用スパッタターゲット
JP3516424B2 (ja) 1996-03-10 2004-04-05 株式会社半導体エネルギー研究所 薄膜半導体装置
US6710525B1 (en) 1999-10-19 2004-03-23 Candescent Technologies Corporation Electrode structure and method for forming electrode structure for a flat panel display
KR102078253B1 (ko) 2010-02-26 2020-04-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61183433A (ja) * 1985-02-08 1986-08-16 Matsushita Electric Ind Co Ltd アルミニウム合金薄膜とその製造方法
JPS62235454A (ja) * 1986-04-03 1987-10-15 Nippon Mining Co Ltd 半導体配線材料用Ｎ含有Ａｌ合金
JPS6484639A (en) * 1987-09-25 1989-03-29 Nippon Denso Co Al wiring and manufacture thereof
JP2850393B2 (ja) * 1988-12-15 1999-01-27 株式会社デンソー アルミニウム配線及びその製造方法
JPH03120722A (ja) * 1989-10-03 1991-05-22 Seiko Epson Corp アルミニウム配線

Also Published As

Publication number Publication date
EP0542271A3 (de) 1994-01-19
EP0542271A2 (de) 1993-05-19
DE69224038D1 (de) 1998-02-19
HK1013520A1 (en) 1999-08-27
EP0542271B1 (de) 1998-01-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee