HK1013520A1 - Thin-film device with a compound conductive layer - Google Patents

Thin-film device with a compound conductive layer

Info

Publication number
HK1013520A1
HK1013520A1 HK98114683A HK98114683A HK1013520A1 HK 1013520 A1 HK1013520 A1 HK 1013520A1 HK 98114683 A HK98114683 A HK 98114683A HK 98114683 A HK98114683 A HK 98114683A HK 1013520 A1 HK1013520 A1 HK 1013520A1
Authority
HK
Hong Kong
Prior art keywords
thin
conductive layer
film device
compound conductive
compound
Prior art date
Application number
HK98114683A
Other languages
English (en)
Inventor
Ichiro Ohno
Junji Shiota
Original Assignee
Casio Comp Company Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP32677591A external-priority patent/JP3245614B2/ja
Priority claimed from JP32677491A external-priority patent/JP3245613B2/ja
Priority claimed from JP32677391A external-priority patent/JP3245612B2/ja
Priority claimed from JP32677791A external-priority patent/JP3257001B2/ja
Priority claimed from JP35563391A external-priority patent/JP3282204B2/ja
Application filed by Casio Comp Company Ltd filed Critical Casio Comp Company Ltd
Publication of HK1013520A1 publication Critical patent/HK1013520A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
HK98114683A 1991-11-15 1998-12-22 Thin-film device with a compound conductive layer HK1013520A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP32677591A JP3245614B2 (ja) 1991-11-15 1991-11-15 薄膜素子の製造方法
JP32677491A JP3245613B2 (ja) 1991-11-15 1991-11-15 薄膜素子の製造方法
JP32677391A JP3245612B2 (ja) 1991-11-15 1991-11-15 多層配線板の製造方法
JP32677791A JP3257001B2 (ja) 1991-11-15 1991-11-15 多層配線板及び多層配線板の製造方法
JP35563391A JP3282204B2 (ja) 1991-12-24 1991-12-24 アルミニウム系合金膜の成膜方法

Publications (1)

Publication Number Publication Date
HK1013520A1 true HK1013520A1 (en) 1999-08-27

Family

ID=27531154

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98114683A HK1013520A1 (en) 1991-11-15 1998-12-22 Thin-film device with a compound conductive layer

Country Status (3)

Country Link
EP (1) EP0542271B1 (xx)
DE (1) DE69224038T2 (xx)
HK (1) HK1013520A1 (xx)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0731507A1 (en) * 1995-03-08 1996-09-11 International Business Machines Corporation Electrode materials
JP3213196B2 (ja) * 1995-03-08 2001-10-02 日本アイ・ビー・エム株式会社 配線材料、金属配線層の形成方法
USRE45481E1 (en) 1995-10-12 2015-04-21 Kabushiki Kaisha Toshiba Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same
EP0855451A4 (en) * 1995-10-12 1999-10-06 Toshiba Kk WIRING FILM, ION BOMBING SPRAYING TARGET FOR FORMING THIS FILM AND ELECTRONIC COMPONENT COMPRISING THIS FILM
JP3516424B2 (ja) 1996-03-10 2004-04-05 株式会社半導体エネルギー研究所 薄膜半導体装置
US6710525B1 (en) 1999-10-19 2004-03-23 Candescent Technologies Corporation Electrode structure and method for forming electrode structure for a flat panel display
CN107045235A (zh) 2010-02-26 2017-08-15 株式会社半导体能源研究所 液晶显示装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61183433A (ja) * 1985-02-08 1986-08-16 Matsushita Electric Ind Co Ltd アルミニウム合金薄膜とその製造方法
JPS62235454A (ja) * 1986-04-03 1987-10-15 Nippon Mining Co Ltd 半導体配線材料用Ｎ含有Ａｌ合金
JPS6484639A (en) * 1987-09-25 1989-03-29 Nippon Denso Co Al wiring and manufacture thereof
JP2850393B2 (ja) * 1988-12-15 1999-01-27 株式会社デンソー アルミニウム配線及びその製造方法
JPH03120722A (ja) * 1989-10-03 1991-05-22 Seiko Epson Corp アルミニウム配線

Also Published As

Publication number Publication date
EP0542271A3 (xx) 1994-01-19
EP0542271A2 (en) 1993-05-19
DE69224038T2 (de) 1998-04-23
DE69224038D1 (de) 1998-02-19
EP0542271B1 (en) 1998-01-14

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20031112

PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)