DE69223087D1 - DRAM-Zeilenredundanzsschaltung mit verbessertem Wirkungsgrad - Google Patents

DRAM-Zeilenredundanzsschaltung mit verbessertem Wirkungsgrad

Info

Publication number
DE69223087D1
DE69223087D1 DE69223087T DE69223087T DE69223087D1 DE 69223087 D1 DE69223087 D1 DE 69223087D1 DE 69223087 T DE69223087 T DE 69223087T DE 69223087 T DE69223087 T DE 69223087T DE 69223087 D1 DE69223087 D1 DE 69223087D1
Authority
DE
Germany
Prior art keywords
improved efficiency
redundancy circuit
line redundancy
dram line
dram
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69223087T
Other languages
English (en)
Other versions
DE69223087T2 (de
Inventor
Shunichi Sukegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69223087D1 publication Critical patent/DE69223087D1/de
Publication of DE69223087T2 publication Critical patent/DE69223087T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
DE69223087T 1991-05-16 1992-05-14 DRAM-Zeilenredundanzsschaltung mit verbessertem Wirkungsgrad Expired - Fee Related DE69223087T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/701,233 US5257228A (en) 1991-05-16 1991-05-16 Efficiency improved DRAM row redundancy circuit

Publications (2)

Publication Number Publication Date
DE69223087D1 true DE69223087D1 (de) 1997-12-18
DE69223087T2 DE69223087T2 (de) 1998-03-12

Family

ID=24816535

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223087T Expired - Fee Related DE69223087T2 (de) 1991-05-16 1992-05-14 DRAM-Zeilenredundanzsschaltung mit verbessertem Wirkungsgrad

Country Status (5)

Country Link
US (1) US5257228A (de)
EP (1) EP0514164B1 (de)
JP (1) JP2804863B2 (de)
KR (1) KR100247606B1 (de)
DE (1) DE69223087T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0646866A3 (de) * 1993-09-30 1998-05-27 STMicroelectronics, Inc. Hauptfreigabe für Zeilenredundanzdekodierer
JP2760326B2 (ja) * 1995-09-30 1998-05-28 日本電気株式会社 半導体記憶装置
US5970013A (en) * 1998-02-26 1999-10-19 Lucent Technologies Inc. Adaptive addressable circuit redundancy method and apparatus with broadcast write
US6011733A (en) * 1998-02-26 2000-01-04 Lucent Technologies Inc. Adaptive addressable circuit redundancy method and apparatus
US6438672B1 (en) 1999-06-03 2002-08-20 Agere Systems Guardian Corp. Memory aliasing method and apparatus
KR100394574B1 (ko) * 2001-04-10 2003-08-14 삼성전자주식회사 워드라인 결함 체크회로를 구비한 불휘발성 반도체메모리장치
US11029032B2 (en) 2017-11-22 2021-06-08 Dometic Sweden Ab Stove

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4389715A (en) * 1980-10-06 1983-06-21 Inmos Corporation Redundancy scheme for a dynamic RAM
US4471472A (en) * 1982-02-05 1984-09-11 Advanced Micro Devices, Inc. Semiconductor memory utilizing an improved redundant circuitry configuration
US4494220A (en) * 1982-11-24 1985-01-15 At&T Bell Laboratories Folded bit line memory with one decoder per pair of spare rows
US4538247A (en) * 1983-01-14 1985-08-27 Fairchild Research Center Redundant rows in integrated circuit memories
JPS60130000A (ja) * 1983-12-15 1985-07-11 Mitsubishi Electric Corp 半導体記憶装置
DE3477973D1 (en) * 1984-08-02 1989-06-01 Siemens Ag Integrated write-read memory
JPS63168900A (ja) * 1987-01-06 1988-07-12 Toshiba Corp 半導体記憶装置
NL8701085A (nl) * 1987-05-08 1988-12-01 Philips Nv Geheugen met redundante geheugenruimte.

Also Published As

Publication number Publication date
KR920022310A (ko) 1992-12-19
EP0514164A3 (en) 1993-06-02
JP2804863B2 (ja) 1998-09-30
DE69223087T2 (de) 1998-03-12
US5257228A (en) 1993-10-26
EP0514164A2 (de) 1992-11-19
JPH06187794A (ja) 1994-07-08
KR100247606B1 (ko) 2000-03-15
EP0514164B1 (de) 1997-11-12

Similar Documents

Publication Publication Date Title
US4601019B1 (en) Memory with redundancy
ITMI922473A1 (it) Circuito di ridondanza di riga per un dispositivo di memoria a semiconduttore.
EP0504434A4 (de)
GB2097621B (en) Semiconductor memory devices
EP0442301A3 (en) Dynamic ram with on-chip ecc and optimized bit and word redundancy
SG45264A1 (en) Memory with column redundancy and localized column redundancy control signals
JPS6425398A (en) Semiconductor memory
DE69120000D1 (de) Halbleiterspeichergerät mit Redundanzschaltung
DE69126292T2 (de) PMOS-Wortleitung Speisespannungsverstärkungsschaltung für DRAM
DE69622126T2 (de) Speichervorrichtung mit verringerter Anzahl von Sicherungen
DE69223087T2 (de) DRAM-Zeilenredundanzsschaltung mit verbessertem Wirkungsgrad
DE68926159T2 (de) Halbleiterspeichergerät mit verbessertem Redundanzdekoder
GB2308693B (en) Flash memory device
MY120522A (en) Redundant memory array.
EP0335149A3 (de) Halbleiterspeicherredundanzsystem
DE69132951D1 (de) Halbleiter-speicher-vorrichtung
GB2138185B (en) Semiconductor memory device
ATE68288T1 (de) Mehrstufige integrierte dekodereinrichtung.
DE69128746D1 (de) Laserstreckendecodierer für DRAM-Redundanzschema
HK1004494A1 (en) Recundancy circuit for an integrated circuit semiconductor memory
JPS57179998A (en) Memory device having redundancy
ITMI912849A1 (it) Dispositivo di ridondanza per sostituire una cella normale difettosa con una cella di riserva in un dispositivo di memoria a semiconduttore
ITMI912229A1 (it) Dispositivo di memoria a semiconduttore con ridondanza
DE59510285D1 (de) Integrierter Halbleiterspeicher mit Redundanzspeicherzellen
JPS5528564A (en) Memory system

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee