DE69221457D1 - Einrichtung, in der Frequenzerhöhung von elektromagnetischer Strahlung auftritt, und eine solche Einrichtung enthaltendes Gerät zum optischen Abtasten einer Informationsebene - Google Patents

Einrichtung, in der Frequenzerhöhung von elektromagnetischer Strahlung auftritt, und eine solche Einrichtung enthaltendes Gerät zum optischen Abtasten einer Informationsebene

Info

Publication number
DE69221457D1
DE69221457D1 DE69221457T DE69221457T DE69221457D1 DE 69221457 D1 DE69221457 D1 DE 69221457D1 DE 69221457 T DE69221457 T DE 69221457T DE 69221457 T DE69221457 T DE 69221457T DE 69221457 D1 DE69221457 D1 DE 69221457D1
Authority
DE
Germany
Prior art keywords
diode laser
electromagnetic radiation
optically scanning
information level
frequency increase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69221457T
Other languages
English (en)
Other versions
DE69221457T2 (de
Inventor
Coen Theodorus Hube Liedenbaum
Arnoldus Louis Godfri Severens
Ronald Reindert Drenten
Michiel Johannes Jongerius
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE69221457D1 publication Critical patent/DE69221457D1/de
Publication of DE69221457T2 publication Critical patent/DE69221457T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/126—Circuits, methods or arrangements for laser control or stabilisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08059—Constructional details of the reflector, e.g. shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0092—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06216—Pulse modulation or generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/143—Littman-Metcalf configuration, e.g. laser - grating - mirror
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/146—External cavity lasers using a fiber as external cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Radar Systems Or Details Thereof (AREA)
  • Optical Head (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Eye Examination Apparatus (AREA)
  • Mechanical Optical Scanning Systems (AREA)
DE69221457T 1991-12-30 1992-12-17 Einrichtung, in der Frequenzerhöhung von elektromagnetischer Strahlung auftritt, und eine solche Einrichtung enthaltendes Gerät zum optischen Abtasten einer Informationsebene Expired - Fee Related DE69221457T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP91203426 1991-12-30
EP92203740 1992-12-03

Publications (2)

Publication Number Publication Date
DE69221457D1 true DE69221457D1 (de) 1997-09-11
DE69221457T2 DE69221457T2 (de) 1998-02-19

Family

ID=26129534

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69221457T Expired - Fee Related DE69221457T2 (de) 1991-12-30 1992-12-17 Einrichtung, in der Frequenzerhöhung von elektromagnetischer Strahlung auftritt, und eine solche Einrichtung enthaltendes Gerät zum optischen Abtasten einer Informationsebene

Country Status (7)

Country Link
US (1) US5471490A (de)
EP (1) EP0550095B1 (de)
JP (1) JPH0611750A (de)
CN (1) CN1051851C (de)
AT (1) ATE156623T1 (de)
DE (1) DE69221457T2 (de)
SG (1) SG55125A1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5485481A (en) * 1994-06-28 1996-01-16 Seastar Optics Inc. Fibre-grating-stabilized diode laser
US5544271A (en) * 1994-12-12 1996-08-06 Uniphase Corporation Nonlinear optical generator with index of refraction perturbed reflector arrangement
KR100283829B1 (ko) 1995-06-02 2001-03-02 모리시타 요이찌 광소자, 레이저 광원 및 레이저 장치와 광소자의 제조방법
JPH09293267A (ja) * 1996-04-23 1997-11-11 Minebea Co Ltd 記録再生装置
JP3707775B2 (ja) * 1996-05-22 2005-10-19 松下電器産業株式会社 光ディスクシステム
JP3707774B2 (ja) * 1996-05-22 2005-10-19 松下電器産業株式会社 光ディスクシステム
WO1998009280A1 (en) * 1996-08-27 1998-03-05 Quinta Corporation Single-frequency laser source for optical data storage system
JP3212931B2 (ja) * 1997-11-26 2001-09-25 日本電気株式会社 波長変換方法及び波長変換素子
DE10064775A1 (de) * 2000-12-22 2002-06-27 Thomson Brandt Gmbh Verfahren und Anordnung zum Regeln der Lichtleistung eines Abtaststrahls in einem Gerät zum Lesen oder zum Beschreiben optischer Aufzeichnungsträger
US7167490B2 (en) * 2001-11-05 2007-01-23 Jds Uniphase Corporation Optical gain apparatus with pump source wavelength control
US20030228095A1 (en) * 2002-06-10 2003-12-11 Farhad Hakimi System for and method of replicating optical pulses
JP2005070610A (ja) * 2003-08-27 2005-03-17 Fujitsu Ltd 多波長光源装置
JP2008147387A (ja) * 2006-12-08 2008-06-26 Sharp Corp 半導体レーザ光源、半導体レーザ光源の制御方法、ホログラム記録再生装置およびホログラム記録媒体
JP5141270B2 (ja) * 2008-01-31 2013-02-13 株式会社島津製作所 波長変換レーザ装置
WO2013046748A1 (ja) 2011-09-26 2013-04-04 日本精工株式会社 電気自動車用駆動装置
US9525269B2 (en) * 2014-11-22 2016-12-20 TeraDiode, Inc. Wavelength beam combining laser systems utilizing etalons
JP2019015930A (ja) * 2017-07-10 2019-01-31 日本電信電話株式会社 電気光学光偏向器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5861692A (ja) * 1981-10-07 1983-04-12 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体レ−ザ装置
US4616356A (en) * 1984-03-06 1986-10-07 Optical Disc Corporation Aperture compensation signal processor for optical recording
JPS61189686A (ja) * 1985-02-19 1986-08-23 Matsushita Electric Ind Co Ltd レ−ザ装置
JPS62150788A (ja) * 1985-12-24 1987-07-04 Matsushita Electric Ind Co Ltd 光情報処理装置
US4884276A (en) * 1987-11-25 1989-11-28 Amoco Corporation Optical feedback control in the frequency conversion of laser diode radiation
US5027361A (en) * 1988-06-21 1991-06-25 Board Of Trustees Of Leland Stanford, Jr., University Efficient laser harmonic generation employing a low-loss external optical resonator
US5081630A (en) * 1988-07-01 1992-01-14 Amoco Corporation Tunable pulsed titanium:sapphire laser and conditions for its operation
JPH0231487A (ja) * 1988-07-20 1990-02-01 Mitsubishi Electric Corp 半導体レーザ装置とその製造方法
JP2685969B2 (ja) * 1990-08-29 1997-12-08 沖電気工業株式会社 第２高調波発生装置
US5038352A (en) * 1990-11-13 1991-08-06 International Business Machines Incorporation Laser system and method using a nonlinear crystal resonator
JP2849233B2 (ja) * 1991-05-15 1999-01-20 富士写真フイルム株式会社 バルク型共振器構造の光波長変換装置
JPH04349684A (ja) * 1991-05-27 1992-12-04 Pioneer Electron Corp 光パルス発生装置
JP2805400B2 (ja) * 1991-06-14 1998-09-30 富士写真フイルム株式会社 光波長変換装置
US5185752A (en) * 1992-02-18 1993-02-09 Spectra Diode Laboratories, Inc. Coupling arrangements for frequency-doubled diode lasers

Also Published As

Publication number Publication date
EP0550095B1 (de) 1997-08-06
SG55125A1 (en) 2000-06-20
CN1075014A (zh) 1993-08-04
DE69221457T2 (de) 1998-02-19
US5471490A (en) 1995-11-28
JPH0611750A (ja) 1994-01-21
ATE156623T1 (de) 1997-08-15
EP0550095A2 (de) 1993-07-07
CN1051851C (zh) 2000-04-26
EP0550095A3 (en) 1993-10-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee