DE69220379D1 - Chemische beschichtung von diamantfilmen unter benutzung von plasmaentladungsmitteln auf wasserbasis - Google Patents

Chemische beschichtung von diamantfilmen unter benutzung von plasmaentladungsmitteln auf wasserbasis

Info

Publication number
DE69220379D1
DE69220379D1 DE69220379T DE69220379T DE69220379D1 DE 69220379 D1 DE69220379 D1 DE 69220379D1 DE 69220379 T DE69220379 T DE 69220379T DE 69220379 T DE69220379 T DE 69220379T DE 69220379 D1 DE69220379 D1 DE 69220379D1
Authority
DE
Germany
Prior art keywords
confined
reacted
alcohol
diamond
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69220379T
Other languages
English (en)
Other versions
DE69220379T2 (de
Inventor
Ronald Rudder
George Hudson
Robert Hendry
Robert Markunas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Research Triangle Institute
Original Assignee
Research Triangle Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Triangle Institute filed Critical Research Triangle Institute
Application granted granted Critical
Publication of DE69220379D1 publication Critical patent/DE69220379D1/de
Publication of DE69220379T2 publication Critical patent/DE69220379T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/272—Diamond only using DC, AC or RF discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Combustion & Propulsion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
DE69220379T 1991-11-05 1992-11-05 Chemische beschichtung von diamantfilmen unter benutzung von plasmaentladungsmitteln auf wasserbasis Expired - Fee Related DE69220379T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US78789191A 1991-11-05 1991-11-05
PCT/US1992/009289 WO1993008927A1 (en) 1991-11-05 1992-11-05 Chemical vapor deposition of diamond films using water-based plasma discharges

Publications (2)

Publication Number Publication Date
DE69220379D1 true DE69220379D1 (de) 1997-07-17
DE69220379T2 DE69220379T2 (de) 1998-01-15

Family

ID=25142838

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69220379T Expired - Fee Related DE69220379T2 (de) 1991-11-05 1992-11-05 Chemische beschichtung von diamantfilmen unter benutzung von plasmaentladungsmitteln auf wasserbasis

Country Status (8)

Country Link
US (1) US5418018A (de)
EP (1) EP0611331B1 (de)
JP (1) JPH07500876A (de)
AT (1) ATE154258T1 (de)
AU (1) AU2912292A (de)
CA (1) CA2122995A1 (de)
DE (1) DE69220379T2 (de)
WO (1) WO1993008927A1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5480686A (en) * 1991-11-05 1996-01-02 Research Triangle Institute Process and apparatus for chemical vapor deposition of diamond films using water-based plasma discharges
CA2127832C (en) * 1993-07-20 2001-02-20 Grant Lu Cvd diamond radiation detector
JPH0827576A (ja) * 1994-07-18 1996-01-30 Canon Inc ダイヤモンド膜の形成方法
US7654660B2 (en) * 1994-11-07 2010-02-02 Sawgrass Technologies, Inc. Energy activated printing process
US6649317B2 (en) 1994-11-07 2003-11-18 Barbara Wagner Energy activated electrographic printing process
US7041424B2 (en) * 1994-11-07 2006-05-09 Ming Xu Energy activated electrographic printing process
US6673503B2 (en) 1994-11-07 2004-01-06 Barbara Wagner Energy activated electrographic printing process
JP3469761B2 (ja) * 1997-10-30 2003-11-25 東京エレクトロン株式会社 半導体デバイスの製造方法
US8337006B2 (en) 1998-05-06 2012-12-25 Sawgrass Technologies, Inc. Energy activated printing process
US6344149B1 (en) 1998-11-10 2002-02-05 Kennametal Pc Inc. Polycrystalline diamond member and method of making the same
WO2000064681A1 (en) 1999-04-23 2000-11-02 Sawgrass Systems, Inc. Ink jet printing process using reactive inks
RU2238048C2 (ru) * 1999-07-30 2004-10-20 Дрюккер Интернэшнл Бв Способ образования защитного слоя атомов фтора на режущем лезвии хирургического инструмента, режущее лезвие для хирургического инструмента и способ образования защитного слоя атомов фтора на лезвии хирургического инструмента
US7001649B2 (en) 2001-06-19 2006-02-21 Barbara Wagner Intermediate transfer recording medium
US6849370B2 (en) 2001-10-16 2005-02-01 Barbara Wagner Energy activated electrographic printing process
US20060127599A1 (en) * 2002-02-12 2006-06-15 Wojak Gregory J Process and apparatus for preparing a diamond substance
US8220489B2 (en) 2002-12-18 2012-07-17 Vapor Technologies Inc. Faucet with wear-resistant valve component
US8555921B2 (en) 2002-12-18 2013-10-15 Vapor Technologies Inc. Faucet component with coating
US7866342B2 (en) 2002-12-18 2011-01-11 Vapor Technologies, Inc. Valve component for faucet
US7866343B2 (en) 2002-12-18 2011-01-11 Masco Corporation Of Indiana Faucet
DE10358535A1 (de) * 2003-12-13 2005-07-14 Henkel Kgaa Hybridenzyme mit kationischer Bindedomäne
US7829377B2 (en) * 2005-01-11 2010-11-09 Apollo Diamond, Inc Diamond medical devices
US20070026205A1 (en) 2005-08-01 2007-02-01 Vapor Technologies Inc. Article having patterned decorative coating
US20130070366A1 (en) * 2011-09-21 2013-03-21 Hitachi Global Storage Technologies Netherlands B.V. Magnetic recording head with low-wear protective film having hydrogen and/or water vapor therein
US9469918B2 (en) 2014-01-24 2016-10-18 Ii-Vi Incorporated Substrate including a diamond layer and a composite layer of diamond and silicon carbide, and, optionally, silicon
CN105689012B (zh) * 2015-12-15 2017-12-05 中国石油大学(华东) 一种纳米金刚石固体酸催化剂的制备方法
CN113333042B (zh) * 2021-06-21 2022-04-22 太原理工大学 一种用于核酸检测的微流控芯片及其制作方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4517223A (en) * 1982-09-24 1985-05-14 Sovonics Solar Systems Method of making amorphous semiconductor alloys and devices using microwave energy
US4679007A (en) * 1985-05-20 1987-07-07 Advanced Energy, Inc. Matching circuit for delivering radio frequency electromagnetic energy to a variable impedance load
US4686113A (en) * 1985-12-18 1987-08-11 Fairchild Semiconductor Corporation Plasma confinement in a low pressure electrically grounded R.F. heated reactor and deposition method
US4673589A (en) * 1986-02-18 1987-06-16 Amoco Corporation Photoconducting amorphous carbon
US5275798A (en) * 1986-07-11 1994-01-04 Kyocera Corporation Method for producing diamond films
JPH0623430B2 (ja) * 1987-07-13 1994-03-30 株式会社半導体エネルギ−研究所 炭素作製方法
JPS6424093A (en) * 1987-07-21 1989-01-26 Showa Denko Kk Method for synthesizing diamond by vapor phase method
US5145711A (en) * 1987-08-10 1992-09-08 Semiconductor Energy Laboratory Co., Ltd. Cyclotron resonance chemical vapor deposition method of forming a halogen-containing diamond on a substrate
US4935303A (en) * 1987-10-15 1990-06-19 Canon Kabushiki Kaisha Novel diamond-like carbon film and process for the production thereof
US5268201A (en) * 1987-10-20 1993-12-07 Showa Denko Kabushiki Kaisha Composite diamond grain and method for production thereof
JPH01197391A (ja) * 1988-02-01 1989-08-09 Idemitsu Petrochem Co Ltd ダイヤモンドの合成方法
US4971667A (en) * 1988-02-05 1990-11-20 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and apparatus
US5079031A (en) * 1988-03-22 1992-01-07 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for forming thin films
JPH0288497A (ja) * 1988-06-09 1990-03-28 Toshiba Corp 単結晶ダイヤモンド粒子の製造方法
US4948629A (en) * 1989-02-10 1990-08-14 International Business Machines Corporation Deposition of diamond films
US5142390A (en) * 1989-02-23 1992-08-25 Ricoh Company, Ltd. MIM element with a doped hard carbon film
JP2730144B2 (ja) * 1989-03-07 1998-03-25 住友電気工業株式会社 単結晶ダイヤモンド層形成法
JP2799875B2 (ja) * 1989-05-20 1998-09-21 株式会社リコー 液晶表示装置
US5106452A (en) * 1989-06-05 1992-04-21 Semiconductor Energy Laboratory Co., Ltd. Method of depositing diamond and diamond light emitting device
US5023109A (en) * 1989-09-06 1991-06-11 General Atomics Deposition of synthetic diamonds
US5110577A (en) * 1990-01-12 1992-05-05 Ford Motor Company Process of depositing a carbon film having metallic properties
US5124179A (en) * 1990-09-13 1992-06-23 Diamonex, Incorporated Interrupted method for producing multilayered polycrystalline diamond films

Also Published As

Publication number Publication date
EP0611331A4 (de) 1995-01-11
JPH07500876A (ja) 1995-01-26
DE69220379T2 (de) 1998-01-15
US5418018A (en) 1995-05-23
EP0611331A1 (de) 1994-08-24
WO1993008927A1 (en) 1993-05-13
AU2912292A (en) 1993-06-07
EP0611331B1 (de) 1997-06-11
CA2122995A1 (en) 1993-05-13
ATE154258T1 (de) 1997-06-15

Similar Documents

Publication Publication Date Title
DE69220379T2 (de) Chemische beschichtung von diamantfilmen unter benutzung von plasmaentladungsmitteln auf wasserbasis
US5022959A (en) Method of wet etching by use of plasma etched carbonaceous masks
KR100455459B1 (ko) 반도체 처리용 챔버를 세정하기 위한 불소 처리 방법
US4894352A (en) Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride
JP6971267B2 (ja) 高温で処理チャンバ内のホウ素―炭素残留物を除去するための洗浄プロセス
US4957773A (en) Deposition of boron-containing films from decaborane
US8282734B2 (en) Methods to improve the in-film defectivity of PECVD amorphous carbon films
EP0936284A3 (de) Verfahren und Vorrichtung zur Herstellung von Dünnfilmen
EP0074212A1 (de) Vorrichtung zur Herstellung einer dünnen Schicht
US4647512A (en) Diamond-like carbon films and process for production thereof
EP0174743A2 (de) Verfahren zur Abscheidung von Dünnfilmen aus Nitriden der Übergangsmetalle
TW201739752A (zh) 參（二矽烷基）胺
CN101743247B (zh) 利用等离子体增强化学气相沉积来制造高机械性能的极低k膜的硅前驱物
WO2008054591A2 (en) Treatment of effluent in the deposition of carbon-doped silicon
US5061514A (en) Chemical vapor deposition (CVD) process for plasma depositing silicon carbide films onto a substrate
CN115735262A (zh) 稳健的可灰化硬掩模
CN115135801A (zh) 用于半导体应用的高模量硼基陶瓷
KR100358952B1 (ko) 화학기상증착 장치 및 그 방법
US6498104B1 (en) Method of in-situ cleaning for LPCVD TEOS pump
JP3522738B2 (ja) 化学気相成長による金属薄膜形成方法
JPH0361372A (ja) 薄膜形成装置
JPS5889821A (ja) 堆積膜の製造装置
JPS6417867A (en) Manufacture of carbon and boron nitride
Rudder et al. Chemical vapor deposition of diamond films using water: alcohol: organic-acid solutions
JPH0481556B2 (de)

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee