ATE154258T1 - Chemische beschichtung von diamantfilmen unter benutzung von plasmaentladungsmitteln auf wasserbasis - Google Patents

Chemische beschichtung von diamantfilmen unter benutzung von plasmaentladungsmitteln auf wasserbasis

Info

Publication number
ATE154258T1
ATE154258T1 AT92923128T AT92923128T ATE154258T1 AT E154258 T1 ATE154258 T1 AT E154258T1 AT 92923128 T AT92923128 T AT 92923128T AT 92923128 T AT92923128 T AT 92923128T AT E154258 T1 ATE154258 T1 AT E154258T1
Authority
AT
Austria
Prior art keywords
water
confined
reacted
alcohol
diamond
Prior art date
Application number
AT92923128T
Other languages
English (en)
Inventor
Ronald A Rudder
George C Hudson
Robert C Hendry
Robert J Markunas
Original Assignee
Res Triangle Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Res Triangle Inst filed Critical Res Triangle Inst
Application granted granted Critical
Publication of ATE154258T1 publication Critical patent/ATE154258T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/272—Diamond only using DC, AC or RF discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
AT92923128T 1991-11-05 1992-11-05 Chemische beschichtung von diamantfilmen unter benutzung von plasmaentladungsmitteln auf wasserbasis ATE154258T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78789191A 1991-11-05 1991-11-05

Publications (1)

Publication Number Publication Date
ATE154258T1 true ATE154258T1 (de) 1997-06-15

Family

ID=25142838

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92923128T ATE154258T1 (de) 1991-11-05 1992-11-05 Chemische beschichtung von diamantfilmen unter benutzung von plasmaentladungsmitteln auf wasserbasis

Country Status (8)

Country Link
US (1) US5418018A (de)
EP (1) EP0611331B1 (de)
JP (1) JPH07500876A (de)
AT (1) ATE154258T1 (de)
AU (1) AU2912292A (de)
CA (1) CA2122995A1 (de)
DE (1) DE69220379T2 (de)
WO (1) WO1993008927A1 (de)

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US5480686A (en) * 1991-11-05 1996-01-02 Research Triangle Institute Process and apparatus for chemical vapor deposition of diamond films using water-based plasma discharges
CA2127832C (en) * 1993-07-20 2001-02-20 Grant Lu Cvd diamond radiation detector
JPH0827576A (ja) * 1994-07-18 1996-01-30 Canon Inc ダイヤモンド膜の形成方法
US6649317B2 (en) 1994-11-07 2003-11-18 Barbara Wagner Energy activated electrographic printing process
US7041424B2 (en) * 1994-11-07 2006-05-09 Ming Xu Energy activated electrographic printing process
US6673503B2 (en) 1994-11-07 2004-01-06 Barbara Wagner Energy activated electrographic printing process
US7654660B2 (en) * 1994-11-07 2010-02-02 Sawgrass Technologies, Inc. Energy activated printing process
JP3469761B2 (ja) * 1997-10-30 2003-11-25 東京エレクトロン株式会社 半導体デバイスの製造方法
US8337006B2 (en) 1998-05-06 2012-12-25 Sawgrass Technologies, Inc. Energy activated printing process
US6344149B1 (en) 1998-11-10 2002-02-05 Kennametal Pc Inc. Polycrystalline diamond member and method of making the same
DK1089879T3 (da) 1999-04-23 2006-10-30 Sawgrass Systems Inc Inkjet-printningsfremgangsmåde, der anvender af reaktivi blæk
EP1199991A1 (de) * 1999-07-30 2002-05-02 Drukker International B.V. Schneidklinge für ein chirurgisches instrument
US7001649B2 (en) 2001-06-19 2006-02-21 Barbara Wagner Intermediate transfer recording medium
US6849370B2 (en) 2001-10-16 2005-02-01 Barbara Wagner Energy activated electrographic printing process
US20060127599A1 (en) * 2002-02-12 2006-06-15 Wojak Gregory J Process and apparatus for preparing a diamond substance
US8220489B2 (en) 2002-12-18 2012-07-17 Vapor Technologies Inc. Faucet with wear-resistant valve component
US7866343B2 (en) 2002-12-18 2011-01-11 Masco Corporation Of Indiana Faucet
US8555921B2 (en) 2002-12-18 2013-10-15 Vapor Technologies Inc. Faucet component with coating
US7866342B2 (en) 2002-12-18 2011-01-11 Vapor Technologies, Inc. Valve component for faucet
DE10358535A1 (de) * 2003-12-13 2005-07-14 Henkel Kgaa Hybridenzyme mit kationischer Bindedomäne
US7829377B2 (en) * 2005-01-11 2010-11-09 Apollo Diamond, Inc Diamond medical devices
US20070026205A1 (en) 2005-08-01 2007-02-01 Vapor Technologies Inc. Article having patterned decorative coating
US20130070366A1 (en) * 2011-09-21 2013-03-21 Hitachi Global Storage Technologies Netherlands B.V. Magnetic recording head with low-wear protective film having hydrogen and/or water vapor therein
US9469918B2 (en) 2014-01-24 2016-10-18 Ii-Vi Incorporated Substrate including a diamond layer and a composite layer of diamond and silicon carbide, and, optionally, silicon
CN105689012B (zh) * 2015-12-15 2017-12-05 中国石油大学(华东) 一种纳米金刚石固体酸催化剂的制备方法
CN113333042B (zh) * 2021-06-21 2022-04-22 太原理工大学 一种用于核酸检测的微流控芯片及其制作方法

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US4517223A (en) * 1982-09-24 1985-05-14 Sovonics Solar Systems Method of making amorphous semiconductor alloys and devices using microwave energy
US4679007A (en) * 1985-05-20 1987-07-07 Advanced Energy, Inc. Matching circuit for delivering radio frequency electromagnetic energy to a variable impedance load
US4686113A (en) * 1985-12-18 1987-08-11 Fairchild Semiconductor Corporation Plasma confinement in a low pressure electrically grounded R.F. heated reactor and deposition method
US4673589A (en) * 1986-02-18 1987-06-16 Amoco Corporation Photoconducting amorphous carbon
US5275798A (en) * 1986-07-11 1994-01-04 Kyocera Corporation Method for producing diamond films
JPH0623430B2 (ja) * 1987-07-13 1994-03-30 株式会社半導体エネルギ−研究所 炭素作製方法
JPS6424093A (en) * 1987-07-21 1989-01-26 Showa Denko Kk Method for synthesizing diamond by vapor phase method
US5145711A (en) * 1987-08-10 1992-09-08 Semiconductor Energy Laboratory Co., Ltd. Cyclotron resonance chemical vapor deposition method of forming a halogen-containing diamond on a substrate
US4935303A (en) * 1987-10-15 1990-06-19 Canon Kabushiki Kaisha Novel diamond-like carbon film and process for the production thereof
US5268201A (en) * 1987-10-20 1993-12-07 Showa Denko Kabushiki Kaisha Composite diamond grain and method for production thereof
JPH01197391A (ja) * 1988-02-01 1989-08-09 Idemitsu Petrochem Co Ltd ダイヤモンドの合成方法
US4971667A (en) * 1988-02-05 1990-11-20 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and apparatus
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JP2799875B2 (ja) * 1989-05-20 1998-09-21 株式会社リコー 液晶表示装置
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Also Published As

Publication number Publication date
AU2912292A (en) 1993-06-07
EP0611331A1 (de) 1994-08-24
WO1993008927A1 (en) 1993-05-13
DE69220379T2 (de) 1998-01-15
CA2122995A1 (en) 1993-05-13
JPH07500876A (ja) 1995-01-26
EP0611331B1 (de) 1997-06-11
EP0611331A4 (de) 1995-01-11
DE69220379D1 (de) 1997-07-17
US5418018A (en) 1995-05-23

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