ATE154258T1 - CHEMICAL COATING OF DIAMOND FILM USING WATER-BASED PLASMA DISCHARGE AGENTS - Google Patents

CHEMICAL COATING OF DIAMOND FILM USING WATER-BASED PLASMA DISCHARGE AGENTS

Info

Publication number
ATE154258T1
ATE154258T1 AT92923128T AT92923128T ATE154258T1 AT E154258 T1 ATE154258 T1 AT E154258T1 AT 92923128 T AT92923128 T AT 92923128T AT 92923128 T AT92923128 T AT 92923128T AT E154258 T1 ATE154258 T1 AT E154258T1
Authority
AT
Austria
Prior art keywords
water
confined
reacted
alcohol
diamond
Prior art date
Application number
AT92923128T
Other languages
German (de)
Inventor
Ronald A Rudder
George C Hudson
Robert C Hendry
Robert J Markunas
Original Assignee
Res Triangle Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Res Triangle Inst filed Critical Res Triangle Inst
Application granted granted Critical
Publication of ATE154258T1 publication Critical patent/ATE154258T1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/272—Diamond only using DC, AC or RF discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors

Abstract

A chemical vapor deposition (CVD) technique (process and apparatus) for the growth of diamond films using vapor mixtures of selected compounds having desired moieties, specifically precursors that provide carbon and etchant species that remove graphite disclosed. The selected compounds are reacted in a plasma created by a confined rf discharge to produce diamond films on a diamond or a non-diamond substrate. In a preferred embodiment a gas phase mixture including at least 20% water which provides the etchant species is reacted with an alcohol which provides the requisite carbon precursor at low temperature (300 DEG -650 DEG C.) and low pressure (0.1 to 10 Torr), preferably in the presence of an organic acid (acetic acid) which contributes etchant species reactant. In the preferred embodiment the volumetric mixtures have typically been 40-80% water and 60-20% alcohol. The gaseous mixture of H2O and alcohol is dissociated to produce H, OH, and carbon radicals. Both OH and atomic H are capable of etching graphite from the depositing carbon layer. The selected compounds are reacted in a CVD apparatus in which a confined rf discharge is used to create an electric discharge or plasma. The plasma is confined between an inductive rf coil via transformer isolation from the chamber ground.
AT92923128T 1991-11-05 1992-11-05 CHEMICAL COATING OF DIAMOND FILM USING WATER-BASED PLASMA DISCHARGE AGENTS ATE154258T1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78789191A 1991-11-05 1991-11-05

Publications (1)

Publication Number Publication Date
ATE154258T1 true ATE154258T1 (en) 1997-06-15

Family

ID=25142838

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92923128T ATE154258T1 (en) 1991-11-05 1992-11-05 CHEMICAL COATING OF DIAMOND FILM USING WATER-BASED PLASMA DISCHARGE AGENTS

Country Status (8)

Country Link
US (1) US5418018A (en)
EP (1) EP0611331B1 (en)
JP (1) JPH07500876A (en)
AT (1) ATE154258T1 (en)
AU (1) AU2912292A (en)
CA (1) CA2122995A1 (en)
DE (1) DE69220379T2 (en)
WO (1) WO1993008927A1 (en)

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US5480686A (en) * 1991-11-05 1996-01-02 Research Triangle Institute Process and apparatus for chemical vapor deposition of diamond films using water-based plasma discharges
CA2281972C (en) * 1993-07-20 2000-10-17 Saint-Gobain/Norton Industrial Ceramics Corporation Cvd diamond radiation detector
JPH0827576A (en) * 1994-07-18 1996-01-30 Canon Inc Formation of diamond film
US6673503B2 (en) 1994-11-07 2004-01-06 Barbara Wagner Energy activated electrographic printing process
US6649317B2 (en) 1994-11-07 2003-11-18 Barbara Wagner Energy activated electrographic printing process
US7654660B2 (en) * 1994-11-07 2010-02-02 Sawgrass Technologies, Inc. Energy activated printing process
US7041424B2 (en) * 1994-11-07 2006-05-09 Ming Xu Energy activated electrographic printing process
JP3469761B2 (en) * 1997-10-30 2003-11-25 東京エレクトロン株式会社 Method for manufacturing semiconductor device
US8337006B2 (en) * 1998-05-06 2012-12-25 Sawgrass Technologies, Inc. Energy activated printing process
US6344149B1 (en) 1998-11-10 2002-02-05 Kennametal Pc Inc. Polycrystalline diamond member and method of making the same
ES2267529T3 (en) 1999-04-23 2007-03-16 Sawgrass Systems, Inc. PRINT PROCEDURE FOR INK JET THAT USES REACTIVE INKS.
EP1199991A1 (en) * 1999-07-30 2002-05-02 Drukker International B.V. A cutting blade for a surgical instrument
US7001649B2 (en) 2001-06-19 2006-02-21 Barbara Wagner Intermediate transfer recording medium
US6849370B2 (en) 2001-10-16 2005-02-01 Barbara Wagner Energy activated electrographic printing process
US20060127599A1 (en) * 2002-02-12 2006-06-15 Wojak Gregory J Process and apparatus for preparing a diamond substance
US7866343B2 (en) 2002-12-18 2011-01-11 Masco Corporation Of Indiana Faucet
US8555921B2 (en) 2002-12-18 2013-10-15 Vapor Technologies Inc. Faucet component with coating
US7866342B2 (en) 2002-12-18 2011-01-11 Vapor Technologies, Inc. Valve component for faucet
US8220489B2 (en) 2002-12-18 2012-07-17 Vapor Technologies Inc. Faucet with wear-resistant valve component
DE10358535A1 (en) * 2003-12-13 2005-07-14 Henkel Kgaa Hybrid enzymes with cationic binding domain
US7829377B2 (en) * 2005-01-11 2010-11-09 Apollo Diamond, Inc Diamond medical devices
US20070026205A1 (en) 2005-08-01 2007-02-01 Vapor Technologies Inc. Article having patterned decorative coating
US20130070366A1 (en) * 2011-09-21 2013-03-21 Hitachi Global Storage Technologies Netherlands B.V. Magnetic recording head with low-wear protective film having hydrogen and/or water vapor therein
US9469918B2 (en) 2014-01-24 2016-10-18 Ii-Vi Incorporated Substrate including a diamond layer and a composite layer of diamond and silicon carbide, and, optionally, silicon
CN105689012B (en) * 2015-12-15 2017-12-05 中国石油大学(华东) A kind of preparation method of Nano diamond solid acid catalyst
CN113333042B (en) * 2021-06-21 2022-04-22 太原理工大学 Micro-fluidic chip for nucleic acid detection and manufacturing method thereof

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US4679007A (en) * 1985-05-20 1987-07-07 Advanced Energy, Inc. Matching circuit for delivering radio frequency electromagnetic energy to a variable impedance load
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US4673589A (en) * 1986-02-18 1987-06-16 Amoco Corporation Photoconducting amorphous carbon
US5275798A (en) * 1986-07-11 1994-01-04 Kyocera Corporation Method for producing diamond films
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JPS6424093A (en) * 1987-07-21 1989-01-26 Showa Denko Kk Method for synthesizing diamond by vapor phase method
US5145711A (en) * 1987-08-10 1992-09-08 Semiconductor Energy Laboratory Co., Ltd. Cyclotron resonance chemical vapor deposition method of forming a halogen-containing diamond on a substrate
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Also Published As

Publication number Publication date
EP0611331A1 (en) 1994-08-24
DE69220379T2 (en) 1998-01-15
EP0611331A4 (en) 1995-01-11
CA2122995A1 (en) 1993-05-13
US5418018A (en) 1995-05-23
WO1993008927A1 (en) 1993-05-13
AU2912292A (en) 1993-06-07
DE69220379D1 (en) 1997-07-17
JPH07500876A (en) 1995-01-26
EP0611331B1 (en) 1997-06-11

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