DE69213403T2 - Strahlung emittierende Halbleiterdiode - Google Patents

Strahlung emittierende Halbleiterdiode

Info

Publication number
DE69213403T2
DE69213403T2 DE69213403T DE69213403T DE69213403T2 DE 69213403 T2 DE69213403 T2 DE 69213403T2 DE 69213403 T DE69213403 T DE 69213403T DE 69213403 T DE69213403 T DE 69213403T DE 69213403 T2 DE69213403 T2 DE 69213403T2
Authority
DE
Germany
Prior art keywords
radiation
emitting semiconductor
semiconductor diode
diode
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69213403T
Other languages
English (en)
Other versions
DE69213403D1 (de
Inventor
Der Poel Carolus Johannes Van
Adriaan Valster
Michael Jozef Bernad Boermans
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Viavi Solutions Inc
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Publication of DE69213403D1 publication Critical patent/DE69213403D1/de
Application granted granted Critical
Publication of DE69213403T2 publication Critical patent/DE69213403T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
DE69213403T 1991-11-26 1992-11-18 Strahlung emittierende Halbleiterdiode Expired - Fee Related DE69213403T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP91203087 1991-11-26

Publications (2)

Publication Number Publication Date
DE69213403D1 DE69213403D1 (de) 1996-10-10
DE69213403T2 true DE69213403T2 (de) 1997-03-20

Family

ID=8208035

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69213403T Expired - Fee Related DE69213403T2 (de) 1991-11-26 1992-11-18 Strahlung emittierende Halbleiterdiode

Country Status (5)

Country Link
US (1) US5299216A (de)
EP (1) EP0544357B1 (de)
JP (1) JPH05267797A (de)
DE (1) DE69213403T2 (de)
TW (1) TW230278B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5723871A (en) * 1991-05-02 1998-03-03 Daido Tokushuko Kabushiki Kaisha Process of emitting highly spin-polarized electron beam and semiconductor device therefor
JPH08279650A (ja) * 1995-04-06 1996-10-22 Mitsubishi Electric Corp 半導体レーザ装置、及び半導体レーザ装置の製造方法
JP3195194B2 (ja) * 1995-05-26 2001-08-06 シャープ株式会社 半導体発光素子およびその製造方法
WO1997036335A1 (en) * 1996-03-28 1997-10-02 Philips Electronics N.V. Radiation-emitting semiconductor diode having a separate confinement layer comprising a semiconductor material with at most 30 % aluminum or a semiconductor material free of aluminum
JPH10335742A (ja) * 1997-06-04 1998-12-18 Toshiba Corp 半導体レーザ装置
JP4024471B2 (ja) * 2000-11-20 2007-12-19 株式会社東芝 面発光型半導体レーザ
US7812249B2 (en) * 2003-04-14 2010-10-12 The Boeing Company Multijunction photovoltaic cell grown on high-miscut-angle substrate

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4122407A (en) * 1976-04-06 1978-10-24 International Business Machines Corporation Heterostructure junction light emitting or responding or modulating devices
US4694311A (en) * 1985-05-22 1987-09-15 Trw Inc. Planar light-emitting diode
US4747108A (en) * 1986-06-30 1988-05-24 General Motors Corporation Lead-europium-selenide-telluride diode laser
JP2544378B2 (ja) * 1987-03-25 1996-10-16 株式会社日立製作所 光半導体装置
JP2555881B2 (ja) * 1988-01-20 1996-11-20 日本電気株式会社 Ａ▲ｌ▼ＧａＩｎＰ系結晶の結晶成長方法および半導体レ−ザ
US5016252A (en) * 1988-09-29 1991-05-14 Sanyo Electric Co., Ltd. Semiconductor laser device
JPH0422185A (ja) * 1990-05-17 1992-01-27 Mitsubishi Electric Corp 半導体光素子
EP0503211B1 (de) * 1991-03-11 1994-06-01 International Business Machines Corporation Halbleiteranordnung mit einer auf einem strukturierten Substrat aufgewachsenen Schichtstruktur

Also Published As

Publication number Publication date
US5299216A (en) 1994-03-29
TW230278B (de) 1994-09-11
DE69213403D1 (de) 1996-10-10
EP0544357B1 (de) 1996-09-04
EP0544357A1 (de) 1993-06-02
JPH05267797A (ja) 1993-10-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: UNIPHASE OPTO HOLDINGS INC., SAN JOSE, CALIF., US

8328 Change in the person/name/address of the agent

Free format text: E. TERGAU UND KOLLEGEN, 90482 NUERNBERG

8327 Change in the person/name/address of the patent owner

Owner name: JDS UNIPHASE CORP., SAN JOSE, CALIF., US

8328 Change in the person/name/address of the agent

Representative=s name: KEHL & ETTMAYR, PATENTANWAELTE, 81679 MUENCHEN

8339 Ceased/non-payment of the annual fee