DE69202996T2 - Verfahren zur automatischen Steuerung der Züchtung des Halsteiles eines Einkristalles. - Google Patents
Verfahren zur automatischen Steuerung der Züchtung des Halsteiles eines Einkristalles.Info
- Publication number
- DE69202996T2 DE69202996T2 DE69202996T DE69202996T DE69202996T2 DE 69202996 T2 DE69202996 T2 DE 69202996T2 DE 69202996 T DE69202996 T DE 69202996T DE 69202996 T DE69202996 T DE 69202996T DE 69202996 T2 DE69202996 T2 DE 69202996T2
- Authority
- DE
- Germany
- Prior art keywords
- growth
- single crystal
- neck portion
- automatically controlling
- automatically
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000013078 crystal Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Feedback Control In General (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3042640A JPH0717475B2 (ja) | 1991-02-14 | 1991-02-14 | 単結晶ネック部育成自動制御方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69202996D1 DE69202996D1 (de) | 1995-07-27 |
DE69202996T2 true DE69202996T2 (de) | 1995-11-16 |
Family
ID=12641614
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69202996T Expired - Fee Related DE69202996T2 (de) | 1991-02-14 | 1992-02-12 | Verfahren zur automatischen Steuerung der Züchtung des Halsteiles eines Einkristalles. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5288363A (de) |
EP (1) | EP0499220B1 (de) |
JP (1) | JPH0717475B2 (de) |
DE (1) | DE69202996T2 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2525300B2 (ja) * | 1991-08-19 | 1996-08-14 | 信越半導体株式会社 | シリコン単結晶の製造方法 |
DE4301072B4 (de) * | 1993-01-16 | 2006-08-24 | Crystal Growing Systems Gmbh | Verfahren zum Ziehen von Einkristallen aus einer Schmelze |
US5487355A (en) * | 1995-03-03 | 1996-01-30 | Motorola, Inc. | Semiconductor crystal growth method |
US5653799A (en) * | 1995-06-02 | 1997-08-05 | Memc Electronic Materials, Inc. | Method for controlling growth of a silicon crystal |
US5578284A (en) * | 1995-06-07 | 1996-11-26 | Memc Electronic Materials, Inc. | Silicon single crystal having eliminated dislocation in its neck |
US6093244A (en) * | 1997-04-10 | 2000-07-25 | Ebara Solar, Inc. | Silicon ribbon growth dendrite thickness control system |
US6226032B1 (en) | 1996-07-16 | 2001-05-01 | General Signal Corporation | Crystal diameter control system |
US5846318A (en) * | 1997-07-17 | 1998-12-08 | Memc Electric Materials, Inc. | Method and system for controlling growth of a silicon crystal |
US5935321A (en) * | 1997-08-01 | 1999-08-10 | Motorola, Inc. | Single crystal ingot and method for growing the same |
US5882402A (en) * | 1997-09-30 | 1999-03-16 | Memc Electronic Materials, Inc. | Method for controlling growth of a silicon crystal |
US5922127A (en) * | 1997-09-30 | 1999-07-13 | Memc Electronic Materials, Inc. | Heat shield for crystal puller |
JP4173216B2 (ja) * | 1998-02-02 | 2008-10-29 | 株式会社Sumco | 単結晶の製造方法 |
US5968263A (en) * | 1998-04-01 | 1999-10-19 | Memc Electronic Materials, Inc. | Open-loop method and system for controlling growth of semiconductor crystal |
US6171391B1 (en) | 1998-10-14 | 2001-01-09 | Memc Electronic Materials, Inc. | Method and system for controlling growth of a silicon crystal |
US6776840B1 (en) * | 1999-03-22 | 2004-08-17 | Memc Electronic Materials, Inc. | Method and apparatus for controlling diameter of a silicon crystal in a locked seed lift growth process |
US6203611B1 (en) * | 1999-10-19 | 2001-03-20 | Memc Electronic Materials, Inc. | Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth |
DE60100795D1 (de) * | 2000-02-01 | 2003-10-23 | Memc Electronic Materials | Verfahren zur steuerung der züchtung eines siliziumeinkristalles um züchtungsgeschwindigkeits- und durchmessersabweichungen zu minimieren |
US20030047130A1 (en) * | 2001-08-29 | 2003-03-13 | Memc Electronic Materials, Inc. | Process for eliminating neck dislocations during czochralski crystal growth |
US6866713B2 (en) * | 2001-10-26 | 2005-03-15 | Memc Electronic Materials, Inc. | Seed crystals for pulling single crystal silicon |
CN100346010C (zh) * | 2005-05-13 | 2007-10-31 | 中国科学院上海硅酸盐研究所 | 一种熔体晶体实时观察系统 |
JP2006056780A (ja) * | 2005-11-07 | 2006-03-02 | Sumco Corp | 単結晶の製造方法および装置 |
US20200002839A1 (en) * | 2018-06-28 | 2020-01-02 | Global Wafers Co., Ltd. | Monitoring a moving average of the ingot neck pull rate to control the quality of the neck for ingot growth |
CN115584557A (zh) * | 2022-11-08 | 2023-01-10 | 晶科能源股份有限公司 | 一种温度控制方法和设备、单晶炉 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3621213A (en) * | 1969-11-26 | 1971-11-16 | Ibm | Programmed digital-computer-controlled system for automatic growth of semiconductor crystals |
US3692499A (en) * | 1970-08-31 | 1972-09-19 | Texas Instruments Inc | Crystal pulling system |
US4207293A (en) * | 1974-06-14 | 1980-06-10 | Varian Associates, Inc. | Circumferential error signal apparatus for crystal rod pulling |
US3958129A (en) * | 1974-08-05 | 1976-05-18 | Motorola, Inc. | Automatic crystal diameter control for growth of semiconductor crystals |
JPH0631194B2 (ja) * | 1984-02-22 | 1994-04-27 | 株式会社東芝 | 単結晶の製造方法 |
US4617173A (en) * | 1984-11-30 | 1986-10-14 | General Signal Corporation | System for controlling the diameter of a crystal in a crystal growing furnace |
JPS63307186A (ja) * | 1987-06-05 | 1988-12-14 | Shin Etsu Handotai Co Ltd | 晶出結晶径制御装置 |
JPS6483595A (en) * | 1987-09-25 | 1989-03-29 | Shinetsu Handotai Kk | Device for measuring crystal diameter |
JPH02208280A (ja) * | 1989-02-06 | 1990-08-17 | Nec Corp | イメージ炉 |
JPH0774117B2 (ja) * | 1989-10-20 | 1995-08-09 | 信越半導体株式会社 | ヒータの温度パターン作成方法及びこの温度パターンを用いたSi単結晶育成制御装置 |
JPH06102590B2 (ja) * | 1990-02-28 | 1994-12-14 | 信越半導体株式会社 | Cz法による単結晶ネック部育成自動制御方法 |
-
1991
- 1991-02-14 JP JP3042640A patent/JPH0717475B2/ja not_active Expired - Lifetime
-
1992
- 1992-02-12 DE DE69202996T patent/DE69202996T2/de not_active Expired - Fee Related
- 1992-02-12 US US07/834,077 patent/US5288363A/en not_active Expired - Fee Related
- 1992-02-12 EP EP92102297A patent/EP0499220B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5288363A (en) | 1994-02-22 |
DE69202996D1 (de) | 1995-07-27 |
EP0499220B1 (de) | 1995-06-21 |
JPH0717475B2 (ja) | 1995-03-01 |
EP0499220A1 (de) | 1992-08-19 |
JPH04260688A (ja) | 1992-09-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |