DE69130732D1 - Herstellungsverfahren für eine Opto-elektronische Strahlungsdetektormatrix - Google Patents
Herstellungsverfahren für eine Opto-elektronische StrahlungsdetektormatrixInfo
- Publication number
- DE69130732D1 DE69130732D1 DE69130732T DE69130732T DE69130732D1 DE 69130732 D1 DE69130732 D1 DE 69130732D1 DE 69130732 T DE69130732 T DE 69130732T DE 69130732 T DE69130732 T DE 69130732T DE 69130732 D1 DE69130732 D1 DE 69130732D1
- Authority
- DE
- Germany
- Prior art keywords
- opto
- manufacturing process
- radiation detector
- detector matrix
- electronic radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000011159 matrix material Substances 0.000 title 1
- 230000005693 optoelectronics Effects 0.000 title 1
- 230000005855 radiation Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
- H01L27/1465—Infrared imagers of the hybrid type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/609,678 US5227656A (en) | 1990-11-06 | 1990-11-06 | Electro-optical detector array |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69130732D1 true DE69130732D1 (de) | 1999-02-18 |
DE69130732T2 DE69130732T2 (de) | 1999-09-09 |
Family
ID=24441847
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69130732T Expired - Lifetime DE69130732T2 (de) | 1990-11-06 | 1991-10-31 | Herstellungsverfahren für eine Opto-elektronische Strahlungsdetektormatrix |
Country Status (7)
Country | Link |
---|---|
US (2) | US5227656A (de) |
EP (1) | EP0485115B1 (de) |
JP (1) | JP3257687B2 (de) |
KR (1) | KR100274124B1 (de) |
CA (1) | CA2054934C (de) |
DE (1) | DE69130732T2 (de) |
IL (1) | IL99856A (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2693033B1 (fr) * | 1992-06-30 | 1994-08-19 | Commissariat Energie Atomique | Dispositif d'imagerie de grande dimension. |
US5591678A (en) * | 1993-01-19 | 1997-01-07 | He Holdings, Inc. | Process of manufacturing a microelectric device using a removable support substrate and etch-stop |
US5494833A (en) * | 1994-07-14 | 1996-02-27 | The United States Of America As Represented By The Secretary Of The Air Force | Backside illuminated MSM device method |
US5472914A (en) * | 1994-07-14 | 1995-12-05 | The United States Of America As Represented By The Secretary Of The Air Force | Wafer joined optoelectronic integrated circuits and method |
US5646066A (en) * | 1995-03-01 | 1997-07-08 | Texas Instruments Incorporated | Method for forming electrical contact to the optical coating of an infrared detector from the backside of the detector |
US6235141B1 (en) | 1996-09-27 | 2001-05-22 | Digital Optics Corporation | Method of mass producing and packaging integrated optical subsystems |
US6114739A (en) * | 1998-10-19 | 2000-09-05 | Agilent Technologies | Elevated pin diode active pixel sensor which includes a patterned doped semiconductor electrode |
FR2818443B1 (fr) * | 2000-12-20 | 2003-10-31 | Sagem | Procede de fabrication de detecteur matriciel infrarouge a eclairage par la face arriere |
FR2820242B1 (fr) * | 2001-01-31 | 2003-06-13 | Sagem | Detecteur infrarouge hybride |
GB2392308B (en) * | 2002-08-15 | 2006-10-25 | Detection Technology Oy | Packaging structure for imaging detectors |
US7351977B2 (en) | 2002-11-08 | 2008-04-01 | L-3 Communications Cincinnati Electronics Corporation | Methods and systems for distinguishing multiple wavelengths of radiation and increasing detected signals in a detection system using micro-optic structures |
US7095026B2 (en) * | 2002-11-08 | 2006-08-22 | L-3 Communications Cincinnati Electronics Corporation | Methods and apparatuses for selectively limiting undesired radiation |
US20070110361A1 (en) * | 2003-08-26 | 2007-05-17 | Digital Optics Corporation | Wafer level integration of multiple optical elements |
CN101459203B (zh) * | 2003-09-09 | 2011-06-15 | 旭化成电子材料元件株式会社 | 红外线传感器ic、红外线传感器及其制造方法 |
JP4800883B2 (ja) * | 2006-09-06 | 2011-10-26 | 日置電機株式会社 | 赤外線センサの製造方法 |
GB2441814B (en) * | 2006-09-07 | 2012-04-11 | Detection Technology Oy | Photodiode array output signal multiplexing |
US7777186B2 (en) * | 2008-08-14 | 2010-08-17 | L-3 Communications Cincinnati Electronics Corporation | Pixel interconnect insulators and methods thereof |
FR2938973B1 (fr) * | 2008-11-27 | 2011-03-04 | Sagem Defense Securite | Cellules matricielles photosensibles dans l'infrarouge a base d'antimoniure sur substrat optiquement transparent et procede de fabrication associe |
US8338200B2 (en) | 2011-02-02 | 2012-12-25 | L-3 Communications Cincinnati Electronics Corporation | Frontside-illuminated inverted quantum well infrared photodetector devices and methods of fabricating the same |
WO2013040184A1 (en) * | 2011-09-13 | 2013-03-21 | L-3 Communications Cincinnati Electronics Corporation | Frontside-illuminated barrier infrared photodetector device and methods of fabricating the same |
RU2519024C1 (ru) * | 2012-07-31 | 2014-06-10 | Открытое акционерное общество "НПО Орион" | Многоэлементный ик фотоприемник |
CN103633107B (zh) * | 2013-12-16 | 2016-05-11 | 中国电子科技集团公司第四十四研究所 | 焦平面探测器安装结构 |
CN106415788B (zh) * | 2014-04-07 | 2020-10-16 | 菲力尔系统公司 | 用于联接半导体基板的方法和系统 |
RU2571434C1 (ru) * | 2014-10-03 | 2015-12-20 | Российская Федерация, от имени которой выступает - Министерство промышленности и торговли Российской Федерации | Матрица фоточувствительных элементов |
US11094736B1 (en) | 2014-11-07 | 2021-08-17 | Hrl Laboratories, Llc | Device and method for reducing cracking of material due to thermal mismatch |
US10020343B2 (en) | 2015-09-25 | 2018-07-10 | Flir Systems, Inc. | Wafer-level back-end fabrication systems and methods |
CN105870032B (zh) * | 2016-04-29 | 2018-06-29 | 河南科技大学 | 一种快速估算红外焦平面探测器中光敏元芯片厚度的方法 |
RU2628449C1 (ru) * | 2016-11-02 | 2017-08-16 | Акционерное общество "НПО "Орион" | Способ изготовления многоэлементного ИК фотоприемника |
RU2703497C1 (ru) * | 2019-01-14 | 2019-10-17 | Акционерное общество "НПО "Орион" | Многоэлементный фотоприемник |
CN110010758A (zh) * | 2019-03-28 | 2019-07-12 | 浙江森尼克半导体有限公司 | 一种磷掺锑化铟薄膜、霍尔传感器件及其制备方法 |
RU2739863C1 (ru) * | 2020-03-23 | 2020-12-29 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" | Способ создания диодных оптоэлектронных пар, стойких к гамма-нейтронному излучению |
CN111640803B (zh) * | 2020-05-18 | 2022-03-11 | 中国电子科技集团公司第十一研究所 | 红外焦平面探测器的芯片组件及其制备方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3555818A (en) * | 1968-04-22 | 1971-01-19 | Blaine H Vlier | Electrostatic precipitator |
US3483096A (en) * | 1968-04-25 | 1969-12-09 | Avco Corp | Process for making an indium antimonide infrared detector contact |
US3808435A (en) * | 1973-05-29 | 1974-04-30 | Texas Instruments Inc | Infra-red quantum differential detector system |
US4053919A (en) * | 1976-08-18 | 1977-10-11 | The United States Of America As Represented By The Secretary Of The Air Force | High speed infrared detector |
US4364077A (en) * | 1980-09-09 | 1982-12-14 | The United States Of America As Represented By The Secretary Of The Air Force | P+ N Gallium phosphide photodiodes |
JPS5773984A (en) * | 1980-10-27 | 1982-05-08 | Fujitsu Ltd | Manufacture of photodetector |
GB2116363B (en) * | 1982-03-03 | 1985-10-16 | Philips Electronic Associated | Multi-level infra-red detectors and their manufacture |
JPS58164261A (ja) * | 1982-03-25 | 1983-09-29 | Toshiba Corp | 赤外線撮像装置の製造方法 |
FR2536908B1 (fr) * | 1982-11-30 | 1986-03-14 | Telecommunications Sa | Procede de fabrication d'un detecteur infrarouge matriciel a eclairage par la face avant |
FR2556135B1 (fr) * | 1983-12-02 | 1986-09-19 | Thomson Csf | Photo-diode a l'antimoniure d'indium et procede de fabrication |
US4646120A (en) * | 1985-03-21 | 1987-02-24 | The United States Of America As Represented By The Secretary Of The Army | Photodiode array |
US4639756A (en) * | 1986-05-05 | 1987-01-27 | Santa Barbara Research Center | Graded gap inversion layer photodiode array |
US4956687A (en) * | 1986-06-26 | 1990-09-11 | Santa Barbara Research Center | Backside contact blocked impurity band detector |
US5116427A (en) * | 1987-08-20 | 1992-05-26 | Kopin Corporation | High temperature photovoltaic cell |
US4783594A (en) * | 1987-11-20 | 1988-11-08 | Santa Barbara Research Center | Reticular detector array |
FR2633101B1 (fr) * | 1988-06-16 | 1992-02-07 | Commissariat Energie Atomique | Photodiode et matrice de photodiodes sur hgcdte et leurs procedes de fabrication |
US4975567A (en) * | 1989-06-29 | 1990-12-04 | The United States Of America As Represented By The Secretary Of The Navy | Multiband photoconductive detector based on layered semiconductor quantum wells |
-
1990
- 1990-11-06 US US07/609,678 patent/US5227656A/en not_active Expired - Lifetime
-
1991
- 1991-10-25 IL IL9985691A patent/IL99856A/en not_active IP Right Cessation
- 1991-10-31 EP EP91310081A patent/EP0485115B1/de not_active Expired - Lifetime
- 1991-10-31 DE DE69130732T patent/DE69130732T2/de not_active Expired - Lifetime
- 1991-11-05 KR KR1019910019606A patent/KR100274124B1/ko not_active IP Right Cessation
- 1991-11-05 CA CA002054934A patent/CA2054934C/en not_active Expired - Lifetime
- 1991-11-06 JP JP31730091A patent/JP3257687B2/ja not_active Expired - Lifetime
-
1993
- 1993-07-12 US US08/089,461 patent/US5304500A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100274124B1 (ko) | 2000-12-15 |
US5304500A (en) | 1994-04-19 |
IL99856A (en) | 1994-12-29 |
IL99856A0 (en) | 1992-08-18 |
EP0485115A2 (de) | 1992-05-13 |
EP0485115B1 (de) | 1999-01-07 |
JP3257687B2 (ja) | 2002-02-18 |
JPH04290265A (ja) | 1992-10-14 |
KR920010983A (ko) | 1992-06-27 |
CA2054934C (en) | 1999-07-13 |
EP0485115A3 (en) | 1992-07-29 |
DE69130732T2 (de) | 1999-09-09 |
US5227656A (en) | 1993-07-13 |
CA2054934A1 (en) | 1992-05-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |