FR2818443B1 - Procede de fabrication de detecteur matriciel infrarouge a eclairage par la face arriere - Google Patents
Procede de fabrication de detecteur matriciel infrarouge a eclairage par la face arriereInfo
- Publication number
- FR2818443B1 FR2818443B1 FR0016684A FR0016684A FR2818443B1 FR 2818443 B1 FR2818443 B1 FR 2818443B1 FR 0016684 A FR0016684 A FR 0016684A FR 0016684 A FR0016684 A FR 0016684A FR 2818443 B1 FR2818443 B1 FR 2818443B1
- Authority
- FR
- France
- Prior art keywords
- lighting
- rear panel
- matrix detector
- infrared matrix
- manufacturing infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000011159 matrix material Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
- H01L27/1465—Infrared imagers of the hybrid type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0016684A FR2818443B1 (fr) | 2000-12-20 | 2000-12-20 | Procede de fabrication de detecteur matriciel infrarouge a eclairage par la face arriere |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0016684A FR2818443B1 (fr) | 2000-12-20 | 2000-12-20 | Procede de fabrication de detecteur matriciel infrarouge a eclairage par la face arriere |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2818443A1 FR2818443A1 (fr) | 2002-06-21 |
FR2818443B1 true FR2818443B1 (fr) | 2003-10-31 |
Family
ID=8857940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0016684A Expired - Fee Related FR2818443B1 (fr) | 2000-12-20 | 2000-12-20 | Procede de fabrication de detecteur matriciel infrarouge a eclairage par la face arriere |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2818443B1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114559369B (zh) * | 2022-02-10 | 2023-06-23 | 中国电子科技集团公司第十一研究所 | 一种红外探测器背减薄的限位粘接模具 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4037311A (en) * | 1976-07-14 | 1977-07-26 | U.S. Philips Corporation | Methods of manufacturing infra-red detector elements |
JPS5773984A (en) * | 1980-10-27 | 1982-05-08 | Fujitsu Ltd | Manufacture of photodetector |
JPS58164261A (ja) * | 1982-03-25 | 1983-09-29 | Toshiba Corp | 赤外線撮像装置の製造方法 |
JP2513055B2 (ja) * | 1990-02-14 | 1996-07-03 | 日本電装株式会社 | 半導体装置の製造方法 |
US5227656A (en) * | 1990-11-06 | 1993-07-13 | Cincinnati Electronics Corporation | Electro-optical detector array |
JPH0947947A (ja) * | 1994-08-30 | 1997-02-18 | Seiko Seiki Co Ltd | 研削装置、並びに研削方法、並びに半導体装置及び半導体基板の製造方法 |
JP3352896B2 (ja) * | 1997-01-17 | 2002-12-03 | 信越半導体株式会社 | 貼り合わせ基板の作製方法 |
-
2000
- 2000-12-20 FR FR0016684A patent/FR2818443B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2818443A1 (fr) | 2002-06-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
TP | Transmission of property |
Owner name: SOFRADIR, FR Effective date: 20131129 |
|
PLFP | Fee payment |
Year of fee payment: 16 |
|
PLFP | Fee payment |
Year of fee payment: 17 |
|
PLFP | Fee payment |
Year of fee payment: 18 |
|
ST | Notification of lapse |
Effective date: 20190906 |