FR2818443B1 - Procede de fabrication de detecteur matriciel infrarouge a eclairage par la face arriere - Google Patents

Procede de fabrication de detecteur matriciel infrarouge a eclairage par la face arriere

Info

Publication number
FR2818443B1
FR2818443B1 FR0016684A FR0016684A FR2818443B1 FR 2818443 B1 FR2818443 B1 FR 2818443B1 FR 0016684 A FR0016684 A FR 0016684A FR 0016684 A FR0016684 A FR 0016684A FR 2818443 B1 FR2818443 B1 FR 2818443B1
Authority
FR
France
Prior art keywords
lighting
rear panel
matrix detector
infrared matrix
manufacturing infrared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0016684A
Other languages
English (en)
Other versions
FR2818443A1 (fr
Inventor
Angari Bernard Ruocco
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Francaise de Detecteurs Infrarouges SOFRADIR SAS
Original Assignee
Sagem SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sagem SA filed Critical Sagem SA
Priority to FR0016684A priority Critical patent/FR2818443B1/fr
Publication of FR2818443A1 publication Critical patent/FR2818443A1/fr
Application granted granted Critical
Publication of FR2818443B1 publication Critical patent/FR2818443B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1464Back illuminated imager structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • H01L27/14649Infrared imagers
    • H01L27/1465Infrared imagers of the hybrid type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469Assemblies, i.e. hybrid integration

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
FR0016684A 2000-12-20 2000-12-20 Procede de fabrication de detecteur matriciel infrarouge a eclairage par la face arriere Expired - Fee Related FR2818443B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR0016684A FR2818443B1 (fr) 2000-12-20 2000-12-20 Procede de fabrication de detecteur matriciel infrarouge a eclairage par la face arriere

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0016684A FR2818443B1 (fr) 2000-12-20 2000-12-20 Procede de fabrication de detecteur matriciel infrarouge a eclairage par la face arriere

Publications (2)

Publication Number Publication Date
FR2818443A1 FR2818443A1 (fr) 2002-06-21
FR2818443B1 true FR2818443B1 (fr) 2003-10-31

Family

ID=8857940

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0016684A Expired - Fee Related FR2818443B1 (fr) 2000-12-20 2000-12-20 Procede de fabrication de detecteur matriciel infrarouge a eclairage par la face arriere

Country Status (1)

Country Link
FR (1) FR2818443B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114559369B (zh) * 2022-02-10 2023-06-23 中国电子科技集团公司第十一研究所 一种红外探测器背减薄的限位粘接模具

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4037311A (en) * 1976-07-14 1977-07-26 U.S. Philips Corporation Methods of manufacturing infra-red detector elements
JPS5773984A (en) * 1980-10-27 1982-05-08 Fujitsu Ltd Manufacture of photodetector
JPS58164261A (ja) * 1982-03-25 1983-09-29 Toshiba Corp 赤外線撮像装置の製造方法
JP2513055B2 (ja) * 1990-02-14 1996-07-03 日本電装株式会社 半導体装置の製造方法
US5227656A (en) * 1990-11-06 1993-07-13 Cincinnati Electronics Corporation Electro-optical detector array
JPH0947947A (ja) * 1994-08-30 1997-02-18 Seiko Seiki Co Ltd 研削装置、並びに研削方法、並びに半導体装置及び半導体基板の製造方法
JP3352896B2 (ja) * 1997-01-17 2002-12-03 信越半導体株式会社 貼り合わせ基板の作製方法

Also Published As

Publication number Publication date
FR2818443A1 (fr) 2002-06-21

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Legal Events

Date Code Title Description
TP Transmission of property
TP Transmission of property

Owner name: SOFRADIR, FR

Effective date: 20131129

PLFP Fee payment

Year of fee payment: 16

PLFP Fee payment

Year of fee payment: 17

PLFP Fee payment

Year of fee payment: 18

ST Notification of lapse

Effective date: 20190906