DE69129179T2 - NF-Schaltsteuerschaltung für Feldeffekttransistoren und Bipolartransistoren mit isoliertem Gate - Google Patents
NF-Schaltsteuerschaltung für Feldeffekttransistoren und Bipolartransistoren mit isoliertem GateInfo
- Publication number
- DE69129179T2 DE69129179T2 DE1991629179 DE69129179T DE69129179T2 DE 69129179 T2 DE69129179 T2 DE 69129179T2 DE 1991629179 DE1991629179 DE 1991629179 DE 69129179 T DE69129179 T DE 69129179T DE 69129179 T2 DE69129179 T2 DE 69129179T2
- Authority
- DE
- Germany
- Prior art keywords
- control circuit
- field effect
- switching control
- insulated gate
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
- H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- X-Ray Techniques (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9014323A FR2669477A1 (fr) | 1990-11-16 | 1990-11-16 | Circuit de commande de commutation basse frequence de transistors a effet de champ et de transistors bipolaires a grille isolee. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69129179D1 DE69129179D1 (de) | 1998-05-07 |
DE69129179T2 true DE69129179T2 (de) | 1998-07-30 |
Family
ID=9402300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1991629179 Expired - Fee Related DE69129179T2 (de) | 1990-11-16 | 1991-11-07 | NF-Schaltsteuerschaltung für Feldeffekttransistoren und Bipolartransistoren mit isoliertem Gate |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0486359B1 (de) |
DE (1) | DE69129179T2 (de) |
FR (1) | FR2669477A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2387155B1 (de) * | 2010-05-10 | 2018-10-10 | SEMIKRON Elektronik GmbH & Co. KG | Verfahren zur Übertragung eines binären Signals über eine Übertragerstrecke |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2684500B1 (fr) * | 1991-12-02 | 1994-06-10 | Rahban Thierry | Generateur bipolaire a isolation galvanique de polarite commutable. |
FR2693604B1 (fr) * | 1992-07-10 | 1994-10-07 | Sgs Thomson Microelectronics | Convertisseur commandé par impulsions et commande électrique de moteur. |
FI97176C (fi) * | 1994-09-27 | 1996-10-25 | Abb Industry Oy | Puolijohdekytkimen ohjauspiiri |
EP0757512B1 (de) * | 1995-07-31 | 2001-11-14 | STMicroelectronics S.r.l. | Steuerungsschaltung, MOS Transistor mit solch einer Schaltung |
JP4317825B2 (ja) * | 2005-02-25 | 2009-08-19 | 三菱重工業株式会社 | インバータ装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH635828A5 (de) * | 1978-08-30 | 1983-04-29 | Ciba Geigy Ag | N-substituierte imide und bisimide. |
GB2109184B (en) * | 1981-10-22 | 1984-11-07 | Ferranti Ltd | Controlling conduction of semiconductor device |
CH653828A5 (en) * | 1983-09-30 | 1986-01-15 | Bbc Brown Boveri & Cie | Pulse transmission circuit for transmission of electrical pulses with potential separation |
JPH01114115A (ja) * | 1987-10-27 | 1989-05-02 | Yaskawa Electric Mfg Co Ltd | 電圧駆動形パワー素子のドライブ回路 |
-
1990
- 1990-11-16 FR FR9014323A patent/FR2669477A1/fr active Granted
-
1991
- 1991-11-07 DE DE1991629179 patent/DE69129179T2/de not_active Expired - Fee Related
- 1991-11-07 EP EP19910402982 patent/EP0486359B1/de not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2387155B1 (de) * | 2010-05-10 | 2018-10-10 | SEMIKRON Elektronik GmbH & Co. KG | Verfahren zur Übertragung eines binären Signals über eine Übertragerstrecke |
Also Published As
Publication number | Publication date |
---|---|
DE69129179D1 (de) | 1998-05-07 |
FR2669477B1 (de) | 1997-03-07 |
EP0486359A1 (de) | 1992-05-20 |
FR2669477A1 (fr) | 1992-05-22 |
EP0486359B1 (de) | 1998-04-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |