DE69128592T2 - Temperaturfühlschaltung - Google Patents

Temperaturfühlschaltung

Info

Publication number
DE69128592T2
DE69128592T2 DE69128592T DE69128592T DE69128592T2 DE 69128592 T2 DE69128592 T2 DE 69128592T2 DE 69128592 T DE69128592 T DE 69128592T DE 69128592 T DE69128592 T DE 69128592T DE 69128592 T2 DE69128592 T2 DE 69128592T2
Authority
DE
Germany
Prior art keywords
temperature sensing
sensing circuit
circuit
temperature
sensing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69128592T
Other languages
English (en)
Other versions
DE69128592D1 (de
Inventor
Royce Lowis
Paul Timothy Moody
Brendan Patrick Kelly
Edward Stretton Eilley
Aart Gerrit Korteling
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV, Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69128592D1 publication Critical patent/DE69128592D1/de
Publication of DE69128592T2 publication Critical patent/DE69128592T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K3/00—Thermometers giving results other than momentary value of temperature
    • G01K3/08—Thermometers giving results other than momentary value of temperature giving differences of values; giving differentiated values
    • G01K3/14—Thermometers giving results other than momentary value of temperature giving differences of values; giving differentiated values in respect of space
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electronic Switches (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
DE69128592T 1990-09-24 1991-09-18 Temperaturfühlschaltung Expired - Lifetime DE69128592T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9020731A GB2248151A (en) 1990-09-24 1990-09-24 Temperature sensing and protection circuit.

Publications (2)

Publication Number Publication Date
DE69128592D1 DE69128592D1 (de) 1998-02-12
DE69128592T2 true DE69128592T2 (de) 1998-06-18

Family

ID=10682641

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69128592T Expired - Lifetime DE69128592T2 (de) 1990-09-24 1991-09-18 Temperaturfühlschaltung

Country Status (5)

Country Link
US (1) US5563760A (de)
EP (2) EP0716294A3 (de)
JP (1) JP3110096B2 (de)
DE (1) DE69128592T2 (de)
GB (1) GB2248151A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7705637B2 (en) 2008-09-29 2010-04-27 Infineon Technologies Ag Semiconductor switch and method for operating a semiconductor switch

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US5875142A (en) * 1997-06-17 1999-02-23 Micron Technology, Inc. Integrated circuit with temperature detector
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US6936496B2 (en) * 2002-12-20 2005-08-30 Hewlett-Packard Development Company, L.P. Nanowire filament
US6991367B2 (en) * 2003-11-04 2006-01-31 Raytheon Company Integrated thermal sensor for microwave transistors
JP4641164B2 (ja) * 2004-09-14 2011-03-02 ルネサスエレクトロニクス株式会社 過熱検出回路
US7839201B2 (en) 2005-04-01 2010-11-23 Raytheon Company Integrated smart power switch
US7135909B1 (en) * 2005-05-17 2006-11-14 Sigmatel, Inc. Temperature sensor circuit and system
DE102005035605A1 (de) * 2005-07-29 2007-02-01 Robert Bosch Gmbh Monolithisch integrierte Schaltungsanordnung zur thermischen Zeitbestimmung und Verfahren zur Bestimmung eines Zeitintervalls
DE102006005033B4 (de) * 2006-02-03 2013-12-05 Infineon Technologies Ag Halbleiterbauelementanordnung mit einem Leistungstransistor und einer Temperaturmessanordnung
US7411436B2 (en) * 2006-02-28 2008-08-12 Cornell Research Foundation, Inc. Self-timed thermally-aware circuits and methods of use thereof
KR100766379B1 (ko) * 2006-08-11 2007-10-12 주식회사 하이닉스반도체 반도체 메모리 장치의 온도 감지 회로
US7746087B2 (en) * 2007-07-13 2010-06-29 Pericom Technology Inc. Heating-control isolation-diode temperature-compensation
US8057094B2 (en) * 2007-11-16 2011-11-15 Infineon Technologies Ag Power semiconductor module with temperature measurement
JP5242367B2 (ja) * 2008-12-24 2013-07-24 セイコーインスツル株式会社 基準電圧回路
US20110051302A1 (en) 2009-08-27 2011-03-03 Infineon Technologies Ag Integrated power device and method
US8878511B2 (en) * 2010-02-04 2014-11-04 Semiconductor Components Industries, Llc Current-mode programmable reference circuits and methods therefor
US8680840B2 (en) * 2010-02-11 2014-03-25 Semiconductor Components Industries, Llc Circuits and methods of producing a reference current or voltage
US8657489B2 (en) 2010-06-28 2014-02-25 Infineon Technologies Ag Power switch temperature control device and method
CN101886933B (zh) * 2010-07-16 2012-06-06 灿瑞半导体(上海)有限公司 带温度补偿的霍尔开关电路
DE202011105181U1 (de) 2011-08-29 2011-12-22 Waltraud Brandl Prüfstand für die Untersuchung des Verschleißverhaltens an Zylinder-Innenflächen
DE102012200384B4 (de) * 2011-12-29 2018-03-15 Continental Automotive Gmbh Auf einem Träger angeordnete Schaltungsanordnung mit Temperaturüberwachung und Verfahren zum Erkennen einer Übertemperatur
US9030054B2 (en) 2012-03-27 2015-05-12 Raytheon Company Adaptive gate drive control method and circuit for composite power switch
CN103248345B (zh) * 2013-05-23 2018-03-27 成都芯进电子有限公司 一种开关型霍尔传感器的温度补偿电路和温度补偿方法
DE102013212925A1 (de) * 2013-07-03 2015-01-08 Zf Friedrichshafen Ag Kontrollvorrichtung und Verfahren zum Überwachen einer Funktion eines Halbleiterbauelements während dessen Betrieb sowie Elektrische Baugruppe mit einer Kontrollvorrichtung
WO2015012798A1 (en) * 2013-07-22 2015-01-29 Intel Corporation Current-mode digital temperature sensor apparatus
US20150346037A1 (en) * 2014-05-29 2015-12-03 Infineon Technologies Ag Integrated temperature sensor
US9816872B2 (en) 2014-06-09 2017-11-14 Qualcomm Incorporated Low power low cost temperature sensor
JP6411847B2 (ja) * 2014-10-02 2018-10-24 ルネサスエレクトロニクス株式会社 半導体装置、それを備えた車載用電子装置及び自動車
JP6402567B2 (ja) * 2014-10-03 2018-10-10 セイコーエプソン株式会社 回路装置及び電子機器
US10345158B2 (en) 2015-04-07 2019-07-09 Stmicroelectronics S.R.L. Integrated electronic device comprising a temperature transducer and method for determining an estimate of a temperature difference
DE102015223470A1 (de) * 2015-11-26 2017-06-01 Robert Bosch Gmbh Halbleiterbauelement mit einem Substrat und einem ersten Temperaturmesselement sowie Verfahren zum Bestimmen eines durch ein Halbleiterbauelement fließenden Stromes sowie Steuergerät für ein Fahrzeug
JP7328008B2 (ja) * 2019-05-29 2023-08-16 ローム株式会社 半導体装置
CN112068631B (zh) * 2020-09-24 2021-06-08 电子科技大学 一种低功耗抗干扰的过温保护电路
EP4027394A1 (de) * 2021-01-11 2022-07-13 Nexperia B.V. Halbleiterbauelement und verfahren zur herstellung
TWI802858B (zh) * 2021-03-26 2023-05-21 立積電子股份有限公司 溫度偵測器

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7705637B2 (en) 2008-09-29 2010-04-27 Infineon Technologies Ag Semiconductor switch and method for operating a semiconductor switch

Also Published As

Publication number Publication date
GB2248151A (en) 1992-03-25
EP0479362A2 (de) 1992-04-08
US5563760A (en) 1996-10-08
GB9020731D0 (en) 1990-11-07
DE69128592D1 (de) 1998-02-12
JPH04273030A (ja) 1992-09-29
JP3110096B2 (ja) 2000-11-20
EP0716294A3 (de) 1997-01-29
EP0716294A2 (de) 1996-06-12
EP0479362B1 (de) 1998-01-07
EP0479362A3 (en) 1992-09-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8328 Change in the person/name/address of the agent

Representative=s name: VOLMER, G., DIPL.-ING., PAT.-ANW., 52066 AACHEN

8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL