DE69126832D1 - BiCMOS logische Schaltung - Google Patents
BiCMOS logische SchaltungInfo
- Publication number
- DE69126832D1 DE69126832D1 DE69126832T DE69126832T DE69126832D1 DE 69126832 D1 DE69126832 D1 DE 69126832D1 DE 69126832 T DE69126832 T DE 69126832T DE 69126832 T DE69126832 T DE 69126832T DE 69126832 D1 DE69126832 D1 DE 69126832D1
- Authority
- DE
- Germany
- Prior art keywords
- logic circuit
- bicmos logic
- bicmos
- circuit
- logic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
- H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22869190A JPH04109666A (ja) | 1990-08-29 | 1990-08-29 | BiCMOS論理回路 |
JP02228687A JP3099351B2 (ja) | 1990-08-29 | 1990-08-29 | BiCMOS論理回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69126832D1 true DE69126832D1 (de) | 1997-08-21 |
DE69126832T2 DE69126832T2 (de) | 1997-11-20 |
Family
ID=26528406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69126832T Expired - Fee Related DE69126832T2 (de) | 1990-08-29 | 1991-08-28 | BiCMOS logische Schaltung |
Country Status (3)
Country | Link |
---|---|
US (1) | US5159214A (de) |
EP (1) | EP0473409B1 (de) |
DE (1) | DE69126832T2 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05198755A (ja) * | 1991-08-29 | 1993-08-06 | Mitsubishi Electric Corp | 半導体論理回路 |
JP2734254B2 (ja) * | 1991-10-15 | 1998-03-30 | 日本電気株式会社 | レベル変換回路 |
US5331593A (en) * | 1993-03-03 | 1994-07-19 | Micron Semiconductor, Inc. | Read circuit for accessing dynamic random access memories (DRAMS) |
JP3441152B2 (ja) * | 1994-04-15 | 2003-08-25 | 株式会社東芝 | BiCMOS回路 |
JP2647014B2 (ja) * | 1994-09-08 | 1997-08-27 | 日本電気株式会社 | BiCMOS論理回路 |
JP3633061B2 (ja) * | 1995-10-19 | 2005-03-30 | 三菱電機株式会社 | 半導体集積回路装置 |
US6307404B1 (en) * | 1999-04-28 | 2001-10-23 | Analog Devices, Inc. | Gate structures with reduced propagation-delay variations |
TW201026159A (en) * | 2008-12-26 | 2010-07-01 | Vanguard Int Semiconduct Corp | Electrostatic discharge protection circuit and integrated circuit utilizing the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0693626B2 (ja) * | 1983-07-25 | 1994-11-16 | 株式会社日立製作所 | 半導体集積回路装置 |
JPS60125015A (ja) * | 1983-12-12 | 1985-07-04 | Hitachi Ltd | インバ−タ回路 |
US4616146A (en) * | 1984-09-04 | 1986-10-07 | Motorola, Inc. | BI-CMOS driver circuit |
US4649295A (en) * | 1986-01-13 | 1987-03-10 | Motorola, Inc. | BIMOS logic gate |
JPS62221219A (ja) * | 1986-03-22 | 1987-09-29 | Toshiba Corp | 論理回路 |
JPS6382122A (ja) * | 1986-09-26 | 1988-04-12 | Toshiba Corp | 論理回路 |
JPH02214219A (ja) * | 1989-02-14 | 1990-08-27 | Nec Corp | バイポーラmos3値出力バッファ |
JP2865256B2 (ja) * | 1989-03-02 | 1999-03-08 | 株式会社日立製作所 | バイポーラ・mos論理回路 |
-
1991
- 1991-08-28 DE DE69126832T patent/DE69126832T2/de not_active Expired - Fee Related
- 1991-08-28 EP EP91307873A patent/EP0473409B1/de not_active Expired - Lifetime
- 1991-08-29 US US07/752,071 patent/US5159214A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5159214A (en) | 1992-10-27 |
EP0473409B1 (de) | 1997-07-16 |
EP0473409A2 (de) | 1992-03-04 |
EP0473409A3 (en) | 1992-07-01 |
DE69126832T2 (de) | 1997-11-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
8339 | Ceased/non-payment of the annual fee |