DE69124753D1 - Verfahren und Vorrichtung zur Messung interner Fehler - Google Patents

Verfahren und Vorrichtung zur Messung interner Fehler

Info

Publication number
DE69124753D1
DE69124753D1 DE69124753T DE69124753T DE69124753D1 DE 69124753 D1 DE69124753 D1 DE 69124753D1 DE 69124753 T DE69124753 T DE 69124753T DE 69124753 T DE69124753 T DE 69124753T DE 69124753 D1 DE69124753 D1 DE 69124753D1
Authority
DE
Germany
Prior art keywords
measuring internal
internal faults
faults
measuring
internal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69124753T
Other languages
English (en)
Other versions
DE69124753T2 (de
Inventor
Kazuo Moriya
Hedio Wada
Katsuyuki Hirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytex Corp Tama Tokio Jp
Original Assignee
Mitsui Mining and Smelting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining and Smelting Co Ltd filed Critical Mitsui Mining and Smelting Co Ltd
Application granted granted Critical
Publication of DE69124753D1 publication Critical patent/DE69124753D1/de
Publication of DE69124753T2 publication Critical patent/DE69124753T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N2021/178—Methods for obtaining spatial resolution of the property being measured
    • G01N2021/1782—In-depth resolution
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
    • G01N2021/392—Measuring reradiation, e.g. fluorescence, backscatter
    • G01N2021/393—Measuring reradiation, e.g. fluorescence, backscatter and using a spectral variation of the interaction of the laser beam and the sample
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N2021/4735—Solid samples, e.g. paper, glass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8896—Circuits specially adapted for system specific signal conditioning
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/10—Scanning
    • G01N2201/102—Video camera

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
DE69124753T 1990-05-21 1991-05-21 Verfahren und Vorrichtung zur Messung interner Fehler Expired - Fee Related DE69124753T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2129182A JPH0424541A (ja) 1990-05-21 1990-05-21 内部欠陥測定方法および装置

Publications (2)

Publication Number Publication Date
DE69124753D1 true DE69124753D1 (de) 1997-04-03
DE69124753T2 DE69124753T2 (de) 1997-07-03

Family

ID=15003173

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69124753T Expired - Fee Related DE69124753T2 (de) 1990-05-21 1991-05-21 Verfahren und Vorrichtung zur Messung interner Fehler

Country Status (4)

Country Link
US (1) US5196716A (de)
EP (1) EP0458418B1 (de)
JP (1) JPH0424541A (de)
DE (1) DE69124753T2 (de)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992015864A1 (en) * 1991-03-06 1992-09-17 The Furukawa Electric Co., Ltd. Method of automatically detecting defects of object to be inspected
JP2916321B2 (ja) * 1992-03-19 1999-07-05 三井金属鉱業株式会社 多層半導体基板等における内部欠陥の検出方法
US5426506A (en) * 1993-03-22 1995-06-20 The University Of Chicago Optical method and apparatus for detection of surface and near-subsurface defects in dense ceramics
JPH06331559A (ja) * 1993-05-18 1994-12-02 Hitachi Ltd 異物検査方法および異物検査装置
JP2920056B2 (ja) * 1993-11-30 1999-07-19 三井金属鉱業株式会社 結晶欠陥観察装置および方法
JP2832272B2 (ja) * 1993-11-30 1998-12-09 三井金属鉱業株式会社 結晶欠陥観察装置
JP2847463B2 (ja) * 1993-11-30 1999-01-20 三井金属鉱業株式会社 半導体デバイスの解析方法
JP2847462B2 (ja) * 1993-11-30 1999-01-20 三井金属鉱業株式会社 半導体結晶の断面観察方法
US5667304A (en) * 1994-12-15 1997-09-16 The Aerospace Corporation Mesospheric temperature sensing lidar apparatus
JP2769797B2 (ja) * 1995-03-15 1998-06-25 東洋ガラス株式会社 透明物体中の微小欠陥検出方法
US5689332A (en) * 1996-09-13 1997-11-18 The University Of Chicago Automated real-time detection of defects during machining of ceramics
US5764353A (en) * 1996-11-29 1998-06-09 Seh America, Inc. Back side damage monitoring system
US6392683B1 (en) * 1997-09-26 2002-05-21 Sumitomo Heavy Industries, Ltd. Method for making marks in a transparent material by using a laser
US6483580B1 (en) 1998-03-06 2002-11-19 Kla-Tencor Technologies Corporation Spectroscopic scatterometer system
JP3536203B2 (ja) * 1999-06-09 2004-06-07 東芝セラミックス株式会社 ウェーハの結晶欠陥測定方法及び装置
DE19929118C2 (de) * 1999-06-25 2001-05-10 Basler Ag Verfahren zum optischen Prüfen der Zwischenschicht eines wenigstens dreischichtigen flächigen Gegenstandes
JP4647090B2 (ja) * 2000-12-13 2011-03-09 ローム株式会社 透明積層体の検査装置
JP4627596B2 (ja) * 2001-01-25 2011-02-09 大日本印刷株式会社 光反射体検査装置とその使用方法、光反射体検査方法
JP4697764B2 (ja) * 2001-09-28 2011-06-08 株式会社高井製作所 ゲル形成性食品の品質判定方法
JP2003307499A (ja) * 2002-04-15 2003-10-31 Mitsui Chemicals Inc 基板の欠陥観察方法
US7163837B2 (en) * 2002-08-29 2007-01-16 Micron Technology, Inc. Method of forming a resistance variable memory element
US8077305B2 (en) * 2004-04-19 2011-12-13 Owen Mark D Imaging semiconductor structures using solid state illumination
JP4690841B2 (ja) * 2005-09-30 2011-06-01 株式会社東芝 表面検査装置
JP2008304217A (ja) * 2007-06-05 2008-12-18 Fujinon Corp 表面欠陥検査装置
JP2009008553A (ja) * 2007-06-28 2009-01-15 Fujinon Corp 欠陥検査装置
DE102009039685B4 (de) * 2009-09-02 2015-07-16 Gp Inspect Gmbh Verfahren und Vorrichtung zur Detektion von Defekten in einem Objekt
US8461532B2 (en) * 2009-11-05 2013-06-11 The Aerospace Corporation Refraction assisted illumination for imaging
US8138476B2 (en) * 2009-11-05 2012-03-20 The Aerospace Corporation Refraction assisted illumination for imaging
US8450688B2 (en) 2009-11-05 2013-05-28 The Aerospace Corporation Refraction assisted illumination for imaging
US9007454B2 (en) 2012-10-31 2015-04-14 The Aerospace Corporation Optimized illumination for imaging
US9696264B2 (en) * 2013-04-03 2017-07-04 Kla-Tencor Corporation Apparatus and methods for determining defect depths in vertical stack memory
DE102013107215B3 (de) * 2013-07-09 2014-10-09 Heraeus Quarzglas Gmbh & Co. Kg Verfahren zur Herstellung eines Spiegelsubstrat-Rohlings aus Titan-dotiertem Kieselglas für die EUV-Lithographie, sowie System zur Positionsbestimmung von Defekten in einem Rohling
JP6288272B2 (ja) * 2014-07-08 2018-03-07 日産自動車株式会社 欠陥検査装置及び生産システム
US10241036B2 (en) * 2017-05-08 2019-03-26 Siemens Energy, Inc. Laser thermography
JP2018205458A (ja) * 2017-06-01 2018-12-27 凸版印刷株式会社 Ｅｕｖブランク及びｅｕｖマスクの欠陥検査装置、欠陥検査方法、ｅｕｖマスクの製造方法
JP7017133B2 (ja) * 2018-09-26 2022-02-08 株式会社Sumco 欠陥評価装置の調整状態評価方法及び調整方法
CN113092467A (zh) * 2020-11-06 2021-07-09 长江大学 全岩光片智能化显微识别定量系统
US20240068958A1 (en) * 2021-12-10 2024-02-29 Kwansei Gakuin Educational Foundation Method and system for evaluating work-affected layer
WO2024058243A1 (ja) * 2022-09-14 2024-03-21 三菱ケミカル株式会社 導電膜の製造方法、マスクの製造方法、半導体デバイスの製造方法、導電膜の欠陥検査方法、及び欠陥検査装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1315654A (en) * 1969-05-21 1973-05-02 Pilkington Brothers Ltd Detection of faults in transparent material using lasers
US4314763A (en) * 1979-01-04 1982-02-09 Rca Corporation Defect detection system
JPS57161640A (en) * 1981-03-31 1982-10-05 Olympus Optical Co Ltd Inspecting device for surface
DE3418283A1 (de) * 1984-05-17 1985-12-12 Schott Glaswerke, 6500 Mainz Verfahren zum nachweis von fehlstellen in transparenten materialien
JP2545209B2 (ja) * 1985-11-20 1996-10-16 ラトック・システム・エンジニアリング 株式会社 結晶欠陥検査方法及びその検査装置
DE3637477A1 (de) * 1986-11-04 1988-05-11 Wacker Chemitronic Verfahren und vorrichtung zur ermittlung der qualitaet von oberflaechen, insbesondere von halbleiterscheiben
JP2604607B2 (ja) * 1987-12-09 1997-04-30 三井金属鉱業株式会社 欠陥分布測定法および装置
JPH01221850A (ja) * 1988-02-29 1989-09-05 Shimadzu Corp 赤外線散乱顕微鏡

Also Published As

Publication number Publication date
US5196716A (en) 1993-03-23
EP0458418A2 (de) 1991-11-27
DE69124753T2 (de) 1997-07-03
EP0458418B1 (de) 1997-02-26
EP0458418A3 (en) 1992-09-02
JPH0424541A (ja) 1992-01-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: RAYTEX CORP., TAMA, TOKIO, JP

8339 Ceased/non-payment of the annual fee