DE69124003D1 - Verfahren zur Herstellung eines Schottky-Übergangs unter Verwendung von Diamant - Google Patents

Verfahren zur Herstellung eines Schottky-Übergangs unter Verwendung von Diamant

Info

Publication number
DE69124003D1
DE69124003D1 DE69124003T DE69124003T DE69124003D1 DE 69124003 D1 DE69124003 D1 DE 69124003D1 DE 69124003 T DE69124003 T DE 69124003T DE 69124003 T DE69124003 T DE 69124003T DE 69124003 D1 DE69124003 D1 DE 69124003D1
Authority
DE
Germany
Prior art keywords
diamond
making
schottky junction
schottky
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69124003T
Other languages
English (en)
Other versions
DE69124003T2 (de
Inventor
Yoshiki Nishibayashi
Hiromu Shiomi
Naoji Fujimori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69124003D1 publication Critical patent/DE69124003D1/de
Application granted granted Critical
Publication of DE69124003T2 publication Critical patent/DE69124003T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02085—Cleaning of diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/0425—Making electrodes
    • H01L21/0435—Schottky electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1602—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE1991624003 1990-05-21 1991-05-16 Verfahren zur Herstellung eines Schottky-Übergangs unter Verwendung von Diamant Expired - Fee Related DE69124003T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13159190A JP2913765B2 (ja) 1990-05-21 1990-05-21 シヨツトキー接合の形成法

Publications (2)

Publication Number Publication Date
DE69124003D1 true DE69124003D1 (de) 1997-02-20
DE69124003T2 DE69124003T2 (de) 1997-04-17

Family

ID=15061636

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1991624003 Expired - Fee Related DE69124003T2 (de) 1990-05-21 1991-05-16 Verfahren zur Herstellung eines Schottky-Übergangs unter Verwendung von Diamant

Country Status (3)

Country Link
EP (1) EP0458530B1 (de)
JP (1) JP2913765B2 (de)
DE (1) DE69124003T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05102068A (ja) * 1991-10-11 1993-04-23 Kobe Steel Ltd ダイヤモンドを用いた電子デバイスの電極形成方法
JPH0794303A (ja) * 1993-05-04 1995-04-07 Kobe Steel Ltd 高配向性ダイヤモンド薄膜サーミスタ
JP3755904B2 (ja) * 1993-05-14 2006-03-15 株式会社神戸製鋼所 ダイヤモンド整流素子
JP3549227B2 (ja) * 1993-05-14 2004-08-04 株式会社神戸製鋼所 高配向性ダイヤモンド薄膜
JP3549228B2 (ja) * 1993-05-14 2004-08-04 株式会社神戸製鋼所 高配向性ダイヤモンド放熱基板
JPH0794805A (ja) * 1993-05-14 1995-04-07 Kobe Steel Ltd 高配向性ダイヤモンド薄膜磁気検出素子及び磁気検出装置
JPH0786311A (ja) * 1993-05-14 1995-03-31 Kobe Steel Ltd 高配向性ダイヤモンド薄膜電界効果トランジスタ
US5371383A (en) * 1993-05-14 1994-12-06 Kobe Steel Usa Inc. Highly oriented diamond film field-effect transistor
US5442199A (en) * 1993-05-14 1995-08-15 Kobe Steel Usa, Inc. Diamond hetero-junction rectifying element
EP0642175B1 (de) * 1993-09-07 2004-04-28 Murata Manufacturing Co., Ltd. Halbleiteranordnung mit Schottky-Elektrode und Verfahren zur Herstellung
JP3309887B2 (ja) * 1994-08-17 2002-07-29 住友電気工業株式会社 半導体装置
JP3308755B2 (ja) * 1994-09-16 2002-07-29 東京瓦斯株式会社 素子分離された水素終端ダイヤモンド半導体素子の製造方法
SE515494C2 (sv) * 1999-12-28 2001-08-13 Abb Ab Högspänningshalvledaranordning och förfarande för tillverkning av ett passiveringsskikt på en högspänningshalvledaranordning
JP2002226290A (ja) * 2000-11-29 2002-08-14 Japan Fine Ceramics Center ダイヤモンド加工体の製造方法、及び、ダイヤモンド加工体
WO2006027669A1 (en) * 2004-09-10 2006-03-16 Element Six Limited Switching device
US20090140263A1 (en) * 2006-05-10 2009-06-04 Hitoshi Umezawa Method for diamond surface treatment and device using diamond thin film
US9034200B2 (en) 2007-01-22 2015-05-19 Element Six Limited Technologies Limited Plasma etching of diamond surfaces
JP5099486B2 (ja) * 2007-08-23 2012-12-19 独立行政法人産業技術総合研究所 高出力ダイヤモンド半導体素子
JP5158763B2 (ja) * 2007-09-27 2013-03-06 独立行政法人産業技術総合研究所 高出力ダイヤモンド半導体素子

Also Published As

Publication number Publication date
EP0458530B1 (de) 1997-01-08
EP0458530A2 (de) 1991-11-27
JPH0426161A (ja) 1992-01-29
DE69124003T2 (de) 1997-04-17
EP0458530A3 (en) 1992-10-21
JP2913765B2 (ja) 1999-06-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: WESER & KOLLEGEN, 81245 MUENCHEN

8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: MEISSNER, BOLTE & PARTNER GBR, 80538 MUENCHEN

8339 Ceased/non-payment of the annual fee