DE69120333T2 - Verriegeltes On-Chip-Fehlererkennungs- und -korrektursystem - Google Patents
Verriegeltes On-Chip-Fehlererkennungs- und -korrektursystemInfo
- Publication number
- DE69120333T2 DE69120333T2 DE69120333T DE69120333T DE69120333T2 DE 69120333 T2 DE69120333 T2 DE 69120333T2 DE 69120333 T DE69120333 T DE 69120333T DE 69120333 T DE69120333 T DE 69120333T DE 69120333 T2 DE69120333 T2 DE 69120333T2
- Authority
- DE
- Germany
- Prior art keywords
- locked
- error detection
- correction system
- chip error
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1076—Parity data used in redundant arrays of independent storages, e.g. in RAID systems
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Dram (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Detection And Correction Of Errors (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/517,896 US5307356A (en) | 1990-04-16 | 1990-04-16 | Interlocked on-chip ECC system |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69120333D1 DE69120333D1 (de) | 1996-07-25 |
DE69120333T2 true DE69120333T2 (de) | 1997-01-23 |
Family
ID=24061680
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69120333T Expired - Lifetime DE69120333T2 (de) | 1990-04-16 | 1991-03-01 | Verriegeltes On-Chip-Fehlererkennungs- und -korrektursystem |
Country Status (4)
Country | Link |
---|---|
US (2) | US5307356A (de) |
EP (1) | EP0452649B1 (de) |
JP (1) | JP2571317B2 (de) |
DE (1) | DE69120333T2 (de) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5383155A (en) * | 1993-11-08 | 1995-01-17 | International Business Machines Corporation | Data output latch control circuit and process for semiconductor memory system |
US5535226A (en) * | 1994-05-31 | 1996-07-09 | International Business Machines Corporation | On-chip ECC status |
IT1274925B (it) * | 1994-09-21 | 1997-07-29 | Texas Instruments Italia Spa | Architettura di memoria per dischi a stato solido |
JP3272903B2 (ja) * | 1995-03-16 | 2002-04-08 | 株式会社東芝 | 誤り訂正検出回路と半導体記憶装置 |
US5559453A (en) * | 1995-09-28 | 1996-09-24 | International Business Machines Corporation | Interlocked restore circuit |
US5604755A (en) * | 1995-11-20 | 1997-02-18 | International Business Machine Corp. | Memory system reset circuit |
US5596539A (en) * | 1995-12-28 | 1997-01-21 | Lsi Logic Corporation | Method and apparatus for a low power self-timed memory control system |
US20050036363A1 (en) * | 1996-05-24 | 2005-02-17 | Jeng-Jye Shau | High performance embedded semiconductor memory devices with multiple dimension first-level bit-lines |
US5748547A (en) * | 1996-05-24 | 1998-05-05 | Shau; Jeng-Jye | High performance semiconductor memory devices having multiple dimension bit lines |
US5784391A (en) * | 1996-10-08 | 1998-07-21 | International Business Machines Corporation | Distributed memory system with ECC and method of operation |
US5926227A (en) * | 1997-07-28 | 1999-07-20 | Lsi Logic Corporation | Video decoder dynamic memory allocation system and method with error recovery |
EP0917059A1 (de) * | 1997-11-14 | 1999-05-19 | Nec Corporation | Halbleiterspeicheranordnung mit einer Fehlerkorrekturkodeschaltung |
US6543029B1 (en) * | 1999-09-29 | 2003-04-01 | Emc Corporation | Error corrector |
US6654925B1 (en) | 2000-08-29 | 2003-11-25 | International Business Machines Corporation | Method to determine retries for parallel ECC correction in a pipeline |
US6400619B1 (en) | 2001-04-25 | 2002-06-04 | International Business Machines Corporation | Micro-cell redundancy scheme for high performance eDRAM |
US7051264B2 (en) * | 2001-11-14 | 2006-05-23 | Monolithic System Technology, Inc. | Error correcting memory and method of operating same |
US20030115538A1 (en) * | 2001-12-13 | 2003-06-19 | Micron Technology, Inc. | Error correction in ROM embedded DRAM |
JP3914839B2 (ja) * | 2002-07-11 | 2007-05-16 | エルピーダメモリ株式会社 | 半導体記憶装置 |
US20040148559A1 (en) * | 2003-01-23 | 2004-07-29 | Fetzer Eric S. | Method and circuit for reducing silent data corruption in storage arrays with no increase in read and write times |
JP2005203064A (ja) * | 2004-01-19 | 2005-07-28 | Toshiba Corp | 半導体記憶装置 |
US7341765B2 (en) * | 2004-01-27 | 2008-03-11 | Battelle Energy Alliance, Llc | Metallic coatings on silicon substrates, and methods of forming metallic coatings on silicon substrates |
US7099221B2 (en) | 2004-05-06 | 2006-08-29 | Micron Technology, Inc. | Memory controller method and system compensating for memory cell data losses |
US7512861B2 (en) * | 2004-05-20 | 2009-03-31 | Vladimir Brajovic | Method for determining identity of simultaneous events and applications to image sensing and A/D conversion |
US20060010339A1 (en) * | 2004-06-24 | 2006-01-12 | Klein Dean A | Memory system and method having selective ECC during low power refresh |
US7340668B2 (en) * | 2004-06-25 | 2008-03-04 | Micron Technology, Inc. | Low power cost-effective ECC memory system and method |
US7116602B2 (en) * | 2004-07-15 | 2006-10-03 | Micron Technology, Inc. | Method and system for controlling refresh to avoid memory cell data losses |
US20080096631A1 (en) * | 2004-10-02 | 2008-04-24 | Wms Gaming Inc. | Gaming Device With Error Correcting Memory |
US7392456B2 (en) * | 2004-11-23 | 2008-06-24 | Mosys, Inc. | Predictive error correction code generation facilitating high-speed byte-write in a semiconductor memory |
US7644341B2 (en) * | 2004-12-30 | 2010-01-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for correcting soft errors in memory circuit |
US20060265636A1 (en) * | 2005-05-19 | 2006-11-23 | Klaus Hummler | Optimized testing of on-chip error correction circuit |
JP4768374B2 (ja) * | 2005-09-16 | 2011-09-07 | 株式会社東芝 | 半導体記憶装置 |
US7894289B2 (en) * | 2006-10-11 | 2011-02-22 | Micron Technology, Inc. | Memory system and method using partial ECC to achieve low power refresh and fast access to data |
US7900120B2 (en) * | 2006-10-18 | 2011-03-01 | Micron Technology, Inc. | Memory system and method using ECC with flag bit to identify modified data |
US20080168331A1 (en) * | 2007-01-05 | 2008-07-10 | Thomas Vogelsang | Memory including error correction code circuit |
US7805658B2 (en) * | 2007-02-12 | 2010-09-28 | International Business Machines Corporation | DRAM Cache with on-demand reload |
US7840876B2 (en) * | 2007-02-20 | 2010-11-23 | Qimonda Ag | Power savings for memory with error correction mode |
TW200842869A (en) * | 2007-04-24 | 2008-11-01 | Nanya Technology Corp | Control method for read operation of memory |
US9471418B2 (en) * | 2007-06-19 | 2016-10-18 | Samsung Electronics Co., Ltd. | Memory system that detects bit errors due to read disturbance and methods thereof |
JP2009070509A (ja) * | 2007-09-14 | 2009-04-02 | Oki Electric Ind Co Ltd | 半導体記憶装置 |
JP2009238094A (ja) * | 2008-03-28 | 2009-10-15 | Hitachi Ltd | ストレージシステム及びデータ保存方法 |
JP2010020839A (ja) * | 2008-07-10 | 2010-01-28 | Panasonic Corp | 半導体記憶装置 |
US8364896B2 (en) * | 2008-09-20 | 2013-01-29 | Freescale Semiconductor, Inc. | Method and apparatus for configuring a unified cache based on an associated error rate |
KR102143517B1 (ko) | 2013-02-26 | 2020-08-12 | 삼성전자 주식회사 | 에러 정정회로를 포함하는 반도체 메모리 장치 및 반도체 메모리 장치의 동작방법 |
US9740558B2 (en) | 2015-05-31 | 2017-08-22 | Intel Corporation | On-die ECC with error counter and internal address generation |
US9842021B2 (en) | 2015-08-28 | 2017-12-12 | Intel Corporation | Memory device check bit read mode |
US9997233B1 (en) | 2015-10-08 | 2018-06-12 | Rambus Inc. | Memory module with dynamic stripe width |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
US3959781A (en) * | 1974-11-04 | 1976-05-25 | Intel Corporation | Semiconductor random access memory |
JPS5539073B2 (de) * | 1974-12-25 | 1980-10-08 | ||
JPS5625292A (en) * | 1979-08-08 | 1981-03-11 | Mitsubishi Electric Corp | Memory circuit |
US4335459A (en) * | 1980-05-20 | 1982-06-15 | Miller Richard L | Single chip random access memory with increased yield and reliability |
JPS5771596A (en) * | 1980-10-20 | 1982-05-04 | Fujitsu Ltd | Nonolithic memory chip provided with correcting function |
JPS57143800A (en) * | 1981-02-27 | 1982-09-06 | Nec Corp | Storage device |
JPS58111183A (ja) * | 1981-12-25 | 1983-07-02 | Hitachi Ltd | ダイナミツクram集積回路装置 |
JPS58139399A (ja) * | 1982-02-15 | 1983-08-18 | Hitachi Ltd | 半導体記憶装置 |
JPS6150293A (ja) * | 1984-08-17 | 1986-03-12 | Fujitsu Ltd | 半導体記憶装置 |
JPS61264599A (ja) * | 1985-05-16 | 1986-11-22 | Fujitsu Ltd | 半導体記憶装置 |
US4801988A (en) * | 1986-10-31 | 1989-01-31 | International Business Machines Corporation | Semiconductor trench capacitor cell with merged isolation and node trench construction |
IT1202527B (it) * | 1987-02-12 | 1989-02-09 | Honeywell Inf Systems | Sistema di memoria e relativo apparato di rivelazione-correzione di errore |
JPS63285800A (ja) * | 1987-05-19 | 1988-11-22 | Fujitsu Ltd | 半導体メモリ装置 |
US4833648A (en) * | 1987-07-02 | 1989-05-23 | Texas Instruments Incorporated | Multiport ram hybrid memory cell with fast write |
JPH0682520B2 (ja) * | 1987-07-31 | 1994-10-19 | 株式会社東芝 | 半導体メモリ |
JPH01140494A (ja) * | 1987-11-26 | 1989-06-01 | Mitsubishi Electric Corp | 半導体記憶装置の出力バッファ回路 |
JPH01171199A (ja) * | 1987-12-25 | 1989-07-06 | Mitsubishi Electric Corp | 半導体メモリ |
JPH01208799A (ja) * | 1988-02-16 | 1989-08-22 | Hitachi Ltd | 半導体記憶装置 |
US5027326A (en) * | 1988-11-10 | 1991-06-25 | Dallas Semiconductor Corporation | Self-timed sequential access multiport memory |
US4926387A (en) * | 1988-12-27 | 1990-05-15 | Intel Corporation | Memory timing circuit employing scaled-down models of bit lines using reduced number of memory cells |
CA2043493C (en) * | 1990-10-05 | 1997-04-01 | Ricky C. Hetherington | Hierarchical integrated circuit cache memory |
-
1990
- 1990-04-16 US US07/517,896 patent/US5307356A/en not_active Expired - Fee Related
-
1991
- 1991-03-01 DE DE69120333T patent/DE69120333T2/de not_active Expired - Lifetime
- 1991-03-01 EP EP91103123A patent/EP0452649B1/de not_active Expired - Lifetime
- 1991-03-15 JP JP3051732A patent/JP2571317B2/ja not_active Expired - Lifetime
- 1991-10-31 US US07/785,625 patent/US5638385A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5307356A (en) | 1994-04-26 |
EP0452649B1 (de) | 1996-06-19 |
JPH04222999A (ja) | 1992-08-12 |
JP2571317B2 (ja) | 1997-01-16 |
EP0452649A3 (en) | 1993-02-24 |
US5638385A (en) | 1997-06-10 |
DE69120333D1 (de) | 1996-07-25 |
EP0452649A2 (de) | 1991-10-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8330 | Complete disclaimer |