DE69120114D1 - Elektronenstrahl-Belichtungssystem mit verbesserter Datenübertragungsleistung - Google Patents

Elektronenstrahl-Belichtungssystem mit verbesserter Datenübertragungsleistung

Info

Publication number
DE69120114D1
DE69120114D1 DE69120114T DE69120114T DE69120114D1 DE 69120114 D1 DE69120114 D1 DE 69120114D1 DE 69120114 T DE69120114 T DE 69120114T DE 69120114 T DE69120114 T DE 69120114T DE 69120114 D1 DE69120114 D1 DE 69120114D1
Authority
DE
Germany
Prior art keywords
data transmission
electron beam
transmission performance
beam exposure
exposure system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69120114T
Other languages
English (en)
Other versions
DE69120114T2 (de
Inventor
Shunsuke Fueki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69120114D1 publication Critical patent/DE69120114D1/de
Publication of DE69120114T2 publication Critical patent/DE69120114T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30405—Details
    • H01J2237/30416—Handling of data

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
DE69120114T 1990-03-14 1991-03-14 Elektronenstrahl-Belichtungssystem mit verbesserter Datenübertragungsleistung Expired - Fee Related DE69120114T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6328990 1990-03-14

Publications (2)

Publication Number Publication Date
DE69120114D1 true DE69120114D1 (de) 1996-07-18
DE69120114T2 DE69120114T2 (de) 1996-10-24

Family

ID=13225019

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69120114T Expired - Fee Related DE69120114T2 (de) 1990-03-14 1991-03-14 Elektronenstrahl-Belichtungssystem mit verbesserter Datenübertragungsleistung

Country Status (4)

Country Link
US (1) US5124560A (de)
EP (1) EP0447241B1 (de)
KR (1) KR940009838B1 (de)
DE (1) DE69120114T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2591548B2 (ja) * 1991-07-26 1997-03-19 富士通株式会社 荷電粒子線露光装置及び荷電粒子線露光方法
US5685012A (en) 1993-11-09 1997-11-04 Micron Electronics, Inc. System for employing high speed data transfer between host and peripheral via host interface circuitry utilizing an IOread signal driven by the peripheral or the host
US5664140A (en) * 1995-05-19 1997-09-02 Micron Electronics, Inc. Processor to memory interface logic for use in a computer system using a multiplexed memory address
JP4410871B2 (ja) * 1999-03-25 2010-02-03 キヤノン株式会社 荷電粒子線露光装置及び該装置を用いたデバイス製造方法
JP5037850B2 (ja) * 2006-04-28 2012-10-03 株式会社アドバンテスト 電子ビーム露光装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180128A (en) * 1981-04-30 1982-11-06 Toshiba Corp Equipment for electron beam exposure
US4641252A (en) * 1981-10-01 1987-02-03 Toshiba Kikai Kabushiki Kaisha Electron beam drawing control system
US4541115A (en) * 1983-02-08 1985-09-10 Pattern Processing Technologies, Inc. Pattern processing system
US4718019A (en) * 1985-06-28 1988-01-05 Control Data Corporation Election beam exposure system and an apparatus for carrying out a pattern unwinder
US4837447A (en) * 1986-05-06 1989-06-06 Research Triangle Institute, Inc. Rasterization system for converting polygonal pattern data into a bit-map
JPH07118440B2 (ja) * 1986-07-09 1995-12-18 東芝機械株式会社 電子ビ−ム描画装置
DE3825892C2 (de) * 1987-07-30 1993-12-16 Mitsubishi Electric Corp Verfahren zum Zeichnen eines Musters auf eine Leiterplatte in einer Elektronenstrahl-Direktzeichenvorrichtung
JP2614884B2 (ja) * 1988-02-04 1997-05-28 富士通株式会社 電子ビーム露光方法及びその装置
JPH02280315A (ja) * 1989-04-20 1990-11-16 Mitsubishi Electric Corp 電子ビーム直接描画装置

Also Published As

Publication number Publication date
EP0447241A2 (de) 1991-09-18
DE69120114T2 (de) 1996-10-24
EP0447241B1 (de) 1996-06-12
EP0447241A3 (en) 1992-01-22
KR940009838B1 (ko) 1994-10-17
US5124560A (en) 1992-06-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee