DE69119828T2 - Halbleiteranordnung mit einem isolierenden Graben und Verfahren zu deren Herstellung - Google Patents

Halbleiteranordnung mit einem isolierenden Graben und Verfahren zu deren Herstellung

Info

Publication number
DE69119828T2
DE69119828T2 DE1991619828 DE69119828T DE69119828T2 DE 69119828 T2 DE69119828 T2 DE 69119828T2 DE 1991619828 DE1991619828 DE 1991619828 DE 69119828 T DE69119828 T DE 69119828T DE 69119828 T2 DE69119828 T2 DE 69119828T2
Authority
DE
Germany
Prior art keywords
production
semiconductor device
insulating trench
trench
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1991619828
Other languages
English (en)
Other versions
DE69119828D1 (de
Inventor
Futoshi Tokunoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69119828D1 publication Critical patent/DE69119828D1/de
Application granted granted Critical
Publication of DE69119828T2 publication Critical patent/DE69119828T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66363—Thyristors
    • H01L29/66371—Thyristors structurally associated with another device, e.g. built-in diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Element Separation (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE1991619828 1990-06-12 1991-06-12 Halbleiteranordnung mit einem isolierenden Graben und Verfahren zu deren Herstellung Expired - Fee Related DE69119828T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2154621A JP2547468B2 (ja) 1990-06-12 1990-06-12 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69119828D1 DE69119828D1 (de) 1996-07-04
DE69119828T2 true DE69119828T2 (de) 1997-01-02

Family

ID=15588186

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1991619828 Expired - Fee Related DE69119828T2 (de) 1990-06-12 1991-06-12 Halbleiteranordnung mit einem isolierenden Graben und Verfahren zu deren Herstellung

Country Status (4)

Country Link
EP (1) EP0461879B1 (de)
JP (1) JP2547468B2 (de)
DE (1) DE69119828T2 (de)
ES (1) ES2087245T3 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2796057B2 (ja) * 1993-03-25 1998-09-10 三菱電機株式会社 逆導通ゲートターンオフサイリスタ
KR100695868B1 (ko) 2005-06-23 2007-03-19 삼성전자주식회사 소자 분리막과 그 제조 방법, 이를 갖는 반도체 장치 및 그제조 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57147276A (en) * 1981-03-06 1982-09-11 Hitachi Ltd Reverse conductive type semiconductor switching device
JPS57148371A (en) * 1981-03-10 1982-09-13 Nec Corp Manufacture of mesa type semiconductor device
DE3521079A1 (de) * 1984-06-12 1985-12-12 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Rueckwaerts leitende vollsteuergate-thyristoranordnung
DE3422051C2 (de) * 1984-06-14 1986-06-26 Brown, Boveri & Cie Ag, 6800 Mannheim Silizium-Halbleiterbauelement mit ätztechnisch hergestellter Randkontur und Verfahren zur Herstellung dieses Bauelements
CH668505A5 (de) * 1985-03-20 1988-12-30 Bbc Brown Boveri & Cie Halbleiterbauelement.
EP0286855A1 (de) * 1987-04-15 1988-10-19 BBC Brown Boveri AG Verfahren zum Aetzen von Vertiefungen in ein Siliziumsubstrat

Also Published As

Publication number Publication date
JPH0445579A (ja) 1992-02-14
EP0461879A2 (de) 1991-12-18
JP2547468B2 (ja) 1996-10-23
DE69119828D1 (de) 1996-07-04
EP0461879A3 (en) 1992-12-16
ES2087245T3 (es) 1996-07-16
EP0461879B1 (de) 1996-05-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee