DE69116207D1 - Integrierte Schaltung bestehend aus einem Lateraltransistor mit Mehrfachkollektoren - Google Patents

Integrierte Schaltung bestehend aus einem Lateraltransistor mit Mehrfachkollektoren

Info

Publication number
DE69116207D1
DE69116207D1 DE69116207T DE69116207T DE69116207D1 DE 69116207 D1 DE69116207 D1 DE 69116207D1 DE 69116207 T DE69116207 T DE 69116207T DE 69116207 T DE69116207 T DE 69116207T DE 69116207 D1 DE69116207 D1 DE 69116207D1
Authority
DE
Germany
Prior art keywords
integrated circuit
circuit consisting
lateral transistor
multiple collectors
collectors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69116207T
Other languages
English (en)
Other versions
DE69116207T2 (de
Inventor
Pierre Leduc
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE69116207D1 publication Critical patent/DE69116207D1/de
Publication of DE69116207T2 publication Critical patent/DE69116207T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
DE69116207T 1990-04-27 1991-04-22 Integrierte Schaltung bestehend aus einem Lateraltransistor mit Mehrfachkollektoren Expired - Fee Related DE69116207T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9005413A FR2661556A1 (fr) 1990-04-27 1990-04-27 Circuit integre presentant un transistor lateral multi-collecteurs.

Publications (2)

Publication Number Publication Date
DE69116207D1 true DE69116207D1 (de) 1996-02-22
DE69116207T2 DE69116207T2 (de) 1996-07-25

Family

ID=9396181

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69116207T Expired - Fee Related DE69116207T2 (de) 1990-04-27 1991-04-22 Integrierte Schaltung bestehend aus einem Lateraltransistor mit Mehrfachkollektoren

Country Status (5)

Country Link
US (1) US5200803A (de)
EP (1) EP0454248B1 (de)
JP (1) JPH04229628A (de)
DE (1) DE69116207T2 (de)
FR (1) FR2661556A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0964053A (ja) * 1995-08-18 1997-03-07 Mitsubishi Electric Corp ラテラル型トランジスタ
US6236072B1 (en) * 1998-11-12 2001-05-22 Telefonaktiebolaget Lm Ericsson (Publ) Method and system for emitter partitioning for SiGe RF power transistors

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2592525B1 (fr) * 1985-12-31 1988-02-12 Radiotechnique Compelec Procede de fabrication d'un transistor lateral integre et circuit integre le comprenant
US4684877A (en) * 1986-06-17 1987-08-04 General Motors Corporation Electrical system utilizing a concentric collector PNP transistor
FR2625611B1 (fr) * 1987-12-30 1990-05-04 Radiotechnique Compelec Circuit integre presentant un transistor lateral

Also Published As

Publication number Publication date
DE69116207T2 (de) 1996-07-25
JPH04229628A (ja) 1992-08-19
US5200803A (en) 1993-04-06
EP0454248B1 (de) 1996-01-10
FR2661556A1 (fr) 1991-10-31
EP0454248A1 (de) 1991-10-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee