DE69112922T2 - Anlage mit einer Vakuumkammer. - Google Patents

Anlage mit einer Vakuumkammer.

Info

Publication number
DE69112922T2
DE69112922T2 DE69112922T DE69112922T DE69112922T2 DE 69112922 T2 DE69112922 T2 DE 69112922T2 DE 69112922 T DE69112922 T DE 69112922T DE 69112922 T DE69112922 T DE 69112922T DE 69112922 T2 DE69112922 T2 DE 69112922T2
Authority
DE
Germany
Prior art keywords
vacuum chamber
vacuum
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69112922T
Other languages
English (en)
Other versions
DE69112922D1 (de
Inventor
Kyoji Kinokiri
Hisashi Ubukata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Original Assignee
Shibaura Engineering Works Co Ltd
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Engineering Works Co Ltd, Shibaura Mechatronics Corp filed Critical Shibaura Engineering Works Co Ltd
Application granted granted Critical
Publication of DE69112922D1 publication Critical patent/DE69112922D1/de
Publication of DE69112922T2 publication Critical patent/DE69112922T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67751Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Optical Record Carriers (AREA)
DE69112922T 1990-05-31 1991-05-28 Anlage mit einer Vakuumkammer. Expired - Fee Related DE69112922T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2142650A JPH07116586B2 (ja) 1990-05-31 1990-05-31 バルブ機構を備えた配管装置

Publications (2)

Publication Number Publication Date
DE69112922D1 DE69112922D1 (de) 1995-10-19
DE69112922T2 true DE69112922T2 (de) 1996-02-22

Family

ID=15320295

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69112922T Expired - Fee Related DE69112922T2 (de) 1990-05-31 1991-05-28 Anlage mit einer Vakuumkammer.

Country Status (4)

Country Link
US (1) US5205918A (de)
EP (1) EP0463392B1 (de)
JP (1) JPH07116586B2 (de)
DE (1) DE69112922T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006024418A1 (de) * 2006-05-25 2007-11-29 Plasma Systems Gmbh Vorrichtung zur Oberflächenbehandlung von Halbleitersubstraten aus Silizium

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229615A (en) * 1992-03-05 1993-07-20 Eaton Corporation End station for a parallel beam ion implanter
CH687258A5 (de) * 1993-04-22 1996-10-31 Balzers Hochvakuum Gaseinlassanordnung.
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
US5885356A (en) * 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
NL1000138C2 (nl) * 1995-04-13 1996-10-15 Od & Me Bv Inrichtingen voor het bewerken van een substraat alsmede werkwijze geschikt voor toepassing bij dergelijke inrichtingen.
AU7874198A (en) * 1996-12-23 1998-07-17 Balzers Aktiengesellschaft Vacuum treatment equipment
JP2000133693A (ja) * 1998-08-19 2000-05-12 Shibaura Mechatronics Corp 真空装置用駆動機構および真空装置
EP1048746B1 (de) * 1999-04-28 2005-09-21 Alcan Technology & Management AG Verfahren und Vorrichtung zur Herstellung von Packungen
US6899795B1 (en) * 2000-01-18 2005-05-31 Unaxis Balzers Aktiengesellschaft Sputter chamber as well as vacuum transport chamber and vacuum handling apparatus with such chambers
DE10100427A1 (de) * 2001-01-08 2002-07-18 Steag Hamatech Ag Verfahren und Vorrichtung zum Zusammenfügen von Substraten
JP4977316B2 (ja) * 2002-05-24 2012-07-18 カーハーエス コーポプラスト ゲーエムベーハー 工作物のプラズマ処理方法および装置
DE102004055388A1 (de) 2004-11-17 2006-05-18 Jrw Technology + Engineering Gmbh Vorrichtung zur Bearbeitung von Werkstücken im Vakuum
DE102005029616B3 (de) * 2005-06-23 2006-11-16 Jrw Technology + Engineering Gmbh Vakuumschweißanlage mit Beladungsvorrichtung
JP2009221541A (ja) * 2008-03-17 2009-10-01 Fujifilm Corp 無機層の真空成膜法、バリア性積層体、デバイスおよび光学部材
CN103726103B (zh) * 2012-10-10 2016-04-27 北京北方微电子基地设备工艺研究中心有限责任公司 一种反应腔室
US10559451B2 (en) * 2017-02-15 2020-02-11 Applied Materials, Inc. Apparatus with concentric pumping for multiple pressure regimes

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE924065C (de) * 1951-11-11 1955-02-24 W C Heraeus G M B H Platinschm Verschlussplatte fuer Vakuumkessel
US3981791A (en) * 1975-03-10 1976-09-21 Signetics Corporation Vacuum sputtering apparatus
JPS59117671U (ja) * 1983-01-28 1984-08-08 株式会社日立製作所 イオンスパツタリング装置
US4548699A (en) * 1984-05-17 1985-10-22 Varian Associates, Inc. Transfer plate rotation system
JPS61147871A (ja) * 1984-12-19 1986-07-05 Nec Corp 真空蒸着装置
DE3716498C2 (de) * 1987-05-16 1994-08-04 Leybold Ag Vorrichtung zum Ein- und Ausschleusen von Werkstücken in eine Beschichtungskammer
DE3735284A1 (de) * 1987-10-17 1989-04-27 Leybold Ag Vorrichtung nach dem karussell-prinzip zum beschichten von substraten

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006024418A1 (de) * 2006-05-25 2007-11-29 Plasma Systems Gmbh Vorrichtung zur Oberflächenbehandlung von Halbleitersubstraten aus Silizium

Also Published As

Publication number Publication date
JPH0436468A (ja) 1992-02-06
US5205918A (en) 1993-04-27
DE69112922D1 (de) 1995-10-19
EP0463392B1 (de) 1995-09-13
EP0463392A1 (de) 1992-01-02
JPH07116586B2 (ja) 1995-12-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee