DE69111002T2 - Verfahren zur Herstellung von kleinen Durchgangslöchern in dünne Metallplatten. - Google Patents

Verfahren zur Herstellung von kleinen Durchgangslöchern in dünne Metallplatten.

Info

Publication number
DE69111002T2
DE69111002T2 DE69111002T DE69111002T DE69111002T2 DE 69111002 T2 DE69111002 T2 DE 69111002T2 DE 69111002 T DE69111002 T DE 69111002T DE 69111002 T DE69111002 T DE 69111002T DE 69111002 T2 DE69111002 T2 DE 69111002T2
Authority
DE
Germany
Prior art keywords
holes
thin metal
metal plates
making small
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69111002T
Other languages
English (en)
Other versions
DE69111002D1 (de
Inventor
Keiji Toei
Yasuyoshi Miyaji
Masanobu Sato
Akihiro Inagaki
Seiji Tonogai
Koichi Omoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Publication of DE69111002D1 publication Critical patent/DE69111002D1/de
Application granted granted Critical
Publication of DE69111002T2 publication Critical patent/DE69111002T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C23F1/04—Chemical milling
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/28—Acidic compositions for etching iron group metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
    • H01J9/142—Manufacture of electrodes or electrode systems of non-emitting electrodes of shadow-masks for colour television tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
DE69111002T 1990-09-20 1991-09-19 Verfahren zur Herstellung von kleinen Durchgangslöchern in dünne Metallplatten. Expired - Fee Related DE69111002T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25276390 1990-09-20

Publications (2)

Publication Number Publication Date
DE69111002D1 DE69111002D1 (de) 1995-08-10
DE69111002T2 true DE69111002T2 (de) 1995-11-02

Family

ID=17241957

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69111002T Expired - Fee Related DE69111002T2 (de) 1990-09-20 1991-09-19 Verfahren zur Herstellung von kleinen Durchgangslöchern in dünne Metallplatten.

Country Status (4)

Country Link
US (1) US5200025A (de)
EP (1) EP0476664B1 (de)
KR (1) KR940003742B1 (de)
DE (1) DE69111002T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108770226A (zh) * 2018-05-15 2018-11-06 惠州市金百泽电路科技有限公司 一种线路板阻焊侧蚀位置渗金短路预防加工方法

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* Cited by examiner, † Cited by third party
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ATE140658T1 (de) * 1991-04-10 1996-08-15 Dyconex Ag Metallfolie mit einer strukturierten oberfläche
JP2677466B2 (ja) * 1991-08-09 1997-11-17 リンテック株式会社 抜き型の製造方法および抜き型
US5269878A (en) * 1992-12-10 1993-12-14 Vlsi Technology, Inc. Metal patterning with dechlorinization in integrated circuit manufacture
JPH06215690A (ja) * 1993-01-18 1994-08-05 Sony Corp カラー陰極線管の色選別手段の製造方法
JPH0737492A (ja) * 1993-07-21 1995-02-07 Dainippon Printing Co Ltd アパーチャーグリルの製造方法
US5484074A (en) * 1994-05-03 1996-01-16 Bmc Industries, Inc. Method for manufacturing a shadow mask
TW373222B (en) * 1996-07-02 1999-11-01 Toshiba Corp Shade shelter lid fabricating method, shade shelter lid fabricating device, and the cleaning device using for the same
KR100237219B1 (ko) * 1997-10-08 2000-01-15 손욱 컬러 음극선관의 마스크 어셈블리
FR2781917B1 (fr) * 1998-07-28 2000-09-08 Commissariat Energie Atomique Procede de realisation collective de tetes magnetiques integrees a surface portante de hauteur determinee
US6508945B1 (en) * 2000-02-24 2003-01-21 Sony Corporation Aperture grill for use in cathode ray tube and method for producing same
JP2001338947A (ja) * 2000-05-26 2001-12-07 Nec Corp フリップチップ型半導体装置及びその製造方法
KR20020018278A (ko) * 2000-09-01 2002-03-08 김순택 칼라 음극선관용 마스크 및 이 마스크의 제조방법과마스크를 제조하기 위한 노광마스크
US20050049716A1 (en) * 2001-11-23 2005-03-03 Sven Wagener Bearing and composite structure
US20050161429A1 (en) * 2002-02-07 2005-07-28 Andrew Sauciunac Non-symmetrical photo tooling and dual surface etching
JP2005253856A (ja) * 2004-03-15 2005-09-22 Izumi Products Co 往復式電気かみそりの内刃製造方法
WO2006137299A1 (ja) * 2005-06-20 2006-12-28 Toray Industries, Inc. 電磁波シールドシートの製造方法およびその方法により製造された電磁波シールドシート、ならびにそれを用いたフィルターおよびディスプレイ
WO2007007393A1 (ja) * 2005-07-11 2007-01-18 Sony Chemicals Corporation エッチング装置及びエッチング方法
JP4896542B2 (ja) * 2006-02-24 2012-03-14 富士フイルム株式会社 パターン膜の製造方法
US8492883B2 (en) * 2008-03-14 2013-07-23 Advanced Semiconductor Engineering, Inc. Semiconductor package having a cavity structure
US20100044850A1 (en) * 2008-08-21 2010-02-25 Advanced Semiconductor Engineering, Inc. Advanced quad flat non-leaded package structure and manufacturing method thereof
US8124447B2 (en) 2009-04-10 2012-02-28 Advanced Semiconductor Engineering, Inc. Manufacturing method of advanced quad flat non-leaded package
US20110163430A1 (en) * 2010-01-06 2011-07-07 Advanced Semiconductor Engineering, Inc. Leadframe Structure, Advanced Quad Flat No Lead Package Structure Using the Same, and Manufacturing Methods Thereof
GB2487996B (en) 2011-08-19 2013-07-10 Jemella Ltd Hair dryer
JP5455099B1 (ja) 2013-09-13 2014-03-26 大日本印刷株式会社 金属板、金属板の製造方法、および金属板を用いてマスクを製造する方法
JP5516816B1 (ja) 2013-10-15 2014-06-11 大日本印刷株式会社 金属板、金属板の製造方法、および金属板を用いて蒸着マスクを製造する方法
JP5641462B1 (ja) 2014-05-13 2014-12-17 大日本印刷株式会社 金属板、金属板の製造方法、および金属板を用いてマスクを製造する方法
JP6079911B2 (ja) 2015-02-10 2017-02-15 大日本印刷株式会社 蒸着マスクの製造方法、蒸着マスクを作製するために用いられる金属板およびその製造方法
US9570381B2 (en) 2015-04-02 2017-02-14 Advanced Semiconductor Engineering, Inc. Semiconductor packages and related manufacturing methods
KR102557891B1 (ko) * 2015-10-16 2023-07-21 삼성디스플레이 주식회사 마스크의 제조 방법
CN110400781A (zh) * 2019-07-31 2019-11-01 苏州甫一电子科技有限公司 基于玻璃衬底的三维集成封装转接板及其制作方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3354543A (en) * 1965-06-09 1967-11-28 Bunker Ramo Method of forming holes through circuit boards
FR2020454A5 (en) * 1969-01-23 1970-07-10 Photogravure Ste Moderne Chemical etching of printed circuits
US4303466A (en) * 1980-06-19 1981-12-01 Buckbee-Mears Company Process of forming graded aperture masks
JPS5726345A (en) * 1980-07-24 1982-02-12 Ritsukaa Kk Water warmer utilizing solar heat
JPS58204176A (ja) * 1982-05-24 1983-11-28 Kangiyou Denki Kiki Kk 化学的蝕刻方法
JPS5973834A (ja) * 1982-10-20 1984-04-26 Toshiba Corp シャドウマスクの製造方法
JPS6070185A (ja) * 1983-09-26 1985-04-20 Toshiba Corp シヤドウマスクの製造方法
JPS61130492A (ja) * 1984-11-29 1986-06-18 Dainippon Printing Co Ltd シヤドウマスクの製造方法
JPS63142660A (ja) * 1986-12-04 1988-06-15 Dainippon Screen Mfg Co Ltd リ−ドフレ−ムの製造方法
JPS63286588A (ja) * 1987-05-19 1988-11-24 Toshiba Corp シャドウマスクの製造方法
JP2716714B2 (ja) * 1988-01-27 1998-02-18 株式会社東芝 シャドウマスクの製造方法
JPH02103841A (ja) * 1988-10-11 1990-04-16 Toshiba Corp シャドウマスクの製造方法
JPH02179887A (ja) * 1988-12-29 1990-07-12 Toppan Printing Co Ltd 微細有孔板の製造方法
JPH02179888A (ja) * 1988-12-29 1990-07-12 Toppan Printing Co Ltd 微細有孔板の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108770226A (zh) * 2018-05-15 2018-11-06 惠州市金百泽电路科技有限公司 一种线路板阻焊侧蚀位置渗金短路预防加工方法

Also Published As

Publication number Publication date
DE69111002D1 (de) 1995-08-10
EP0476664B1 (de) 1995-07-05
EP0476664A2 (de) 1992-03-25
KR940003742B1 (ko) 1994-04-28
EP0476664A3 (en) 1993-03-24
US5200025A (en) 1993-04-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee