DE69110999D1 - Dynamische Pufferschaltung. - Google Patents
Dynamische Pufferschaltung.Info
- Publication number
- DE69110999D1 DE69110999D1 DE69110999T DE69110999T DE69110999D1 DE 69110999 D1 DE69110999 D1 DE 69110999D1 DE 69110999 T DE69110999 T DE 69110999T DE 69110999 T DE69110999 T DE 69110999T DE 69110999 D1 DE69110999 D1 DE 69110999D1
- Authority
- DE
- Germany
- Prior art keywords
- buffer circuit
- dynamic buffer
- dynamic
- circuit
- buffer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Logic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2227712A JP2788783B2 (ja) | 1990-08-29 | 1990-08-29 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69110999D1 true DE69110999D1 (de) | 1995-08-10 |
DE69110999T2 DE69110999T2 (de) | 1995-12-07 |
Family
ID=16865172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69110999T Expired - Fee Related DE69110999T2 (de) | 1990-08-29 | 1991-08-29 | Dynamische Pufferschaltung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5208480A (de) |
EP (1) | EP0475637B1 (de) |
JP (1) | JP2788783B2 (de) |
DE (1) | DE69110999T2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5151775A (en) * | 1991-10-07 | 1992-09-29 | Tektronix, Inc. | Integrated circuit device having improved substrate capacitance isolation |
US6898613B1 (en) * | 1999-08-26 | 2005-05-24 | Stmicroelectronics, Inc. | Arithmetic circuits for use with the residue number system |
US6822908B1 (en) * | 2003-05-08 | 2004-11-23 | Micron Technology, Inc. | Synchronous up/down address generator for burst mode read |
WO2016152284A1 (ja) * | 2015-03-26 | 2016-09-29 | 富士フイルム株式会社 | 電子回路装置および電子回路装置の製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6068639A (ja) * | 1983-08-31 | 1985-04-19 | Toshiba Corp | 樹脂封止型半導体装置 |
JPS60134440A (ja) * | 1983-12-23 | 1985-07-17 | Hitachi Ltd | 半導体集積回路装置 |
EP0154346B1 (de) * | 1984-03-08 | 1991-09-18 | Kabushiki Kaisha Toshiba | Integrierte Halbleiterschaltungsvorrichtung |
JPS6164166A (ja) * | 1984-09-06 | 1986-04-02 | Toshiba Corp | 半導体装置 |
JPH0666442B2 (ja) * | 1985-03-08 | 1994-08-24 | 三菱電機株式会社 | 半導体メモリ装置 |
JPS6267851A (ja) * | 1985-09-20 | 1987-03-27 | Hitachi Ltd | 半導体集積回路装置 |
JPS63160241A (ja) * | 1986-12-24 | 1988-07-04 | Toshiba Corp | スタンダ−ドセル方式の半導体集積回路 |
JPH01191512A (ja) * | 1988-01-27 | 1989-08-01 | Seiko Epson Corp | ラッチ回路 |
JPH01251738A (ja) * | 1988-03-31 | 1989-10-06 | Toshiba Corp | スタンダードセル |
JPH0750708B2 (ja) * | 1989-04-26 | 1995-05-31 | 株式会社東芝 | 半導体装置 |
-
1990
- 1990-08-29 JP JP2227712A patent/JP2788783B2/ja not_active Expired - Lifetime
-
1991
- 1991-08-28 US US07/751,331 patent/US5208480A/en not_active Expired - Fee Related
- 1991-08-29 DE DE69110999T patent/DE69110999T2/de not_active Expired - Fee Related
- 1991-08-29 EP EP91307895A patent/EP0475637B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2788783B2 (ja) | 1998-08-20 |
JPH04109624A (ja) | 1992-04-10 |
EP0475637A2 (de) | 1992-03-18 |
US5208480A (en) | 1993-05-04 |
EP0475637A3 (en) | 1992-05-27 |
DE69110999T2 (de) | 1995-12-07 |
EP0475637B1 (de) | 1995-07-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |