DE69110620D1 - Verfahren zur Korrosionsverhinderung von Aluminiumlegierungen. - Google Patents

Verfahren zur Korrosionsverhinderung von Aluminiumlegierungen.

Info

Publication number
DE69110620D1
DE69110620D1 DE69110620T DE69110620T DE69110620D1 DE 69110620 D1 DE69110620 D1 DE 69110620D1 DE 69110620 T DE69110620 T DE 69110620T DE 69110620 T DE69110620 T DE 69110620T DE 69110620 D1 DE69110620 D1 DE 69110620D1
Authority
DE
Germany
Prior art keywords
corrosion
prevention
aluminum alloys
alloys
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69110620T
Other languages
English (en)
Other versions
DE69110620T2 (de
Inventor
Hidenobu Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69110620D1 publication Critical patent/DE69110620D1/de
Publication of DE69110620T2 publication Critical patent/DE69110620T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69110620T 1990-10-30 1991-10-29 Verfahren zur Korrosionsverhinderung von Aluminiumlegierungen. Expired - Fee Related DE69110620T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2292876A JP2663704B2 (ja) 1990-10-30 1990-10-30 Ａｌ合金の腐食防止法

Publications (2)

Publication Number Publication Date
DE69110620D1 true DE69110620D1 (de) 1995-07-27
DE69110620T2 DE69110620T2 (de) 1996-02-29

Family

ID=17787524

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69110620T Expired - Fee Related DE69110620T2 (de) 1990-10-30 1991-10-29 Verfahren zur Korrosionsverhinderung von Aluminiumlegierungen.

Country Status (5)

Country Link
US (1) US5246888A (de)
EP (1) EP0485802B1 (de)
JP (1) JP2663704B2 (de)
KR (1) KR950005351B1 (de)
DE (1) DE69110620T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5868854A (en) * 1989-02-27 1999-02-09 Hitachi, Ltd. Method and apparatus for processing samples
WO1993017453A2 (en) * 1992-02-26 1993-09-02 Materials Research Corporation Ammonia plasma treatment of silicide contact surfaces in semiconductor devices
KR950009281B1 (ko) * 1992-07-10 1995-08-18 현대전자산업주식회사 알루미늄 금속배선 형성방법
JP3449741B2 (ja) * 1992-11-26 2003-09-22 東京エレクトロン株式会社 プラズマエッチング方法
US5397433A (en) * 1993-08-20 1995-03-14 Vlsi Technology, Inc. Method and apparatus for patterning a metal layer
KR100268640B1 (ko) * 1996-01-22 2000-10-16 모리시타 요이찌 알루미늄합금막의 드라이에칭방법과,그 방법에 사용하는 에칭용 가스
US5795829A (en) * 1996-06-03 1998-08-18 Advanced Micro Devices, Inc. Method of high density plasma metal etching
US5846443A (en) * 1996-07-09 1998-12-08 Lam Research Corporation Methods and apparatus for etching semiconductor wafers and layers thereof
JP2985858B2 (ja) * 1997-12-19 1999-12-06 日本電気株式会社 エッチング方法
KR20040079506A (ko) * 2003-03-07 2004-09-16 엘지전자 주식회사 화합물 반도체 발광 소자의 제조 방법
US7037849B2 (en) * 2003-06-27 2006-05-02 Taiwan Semiconductor Manufacturing Company, Ltd. Process for patterning high-k dielectric material
TWI730419B (zh) * 2019-09-20 2021-06-11 力晶積成電子製造股份有限公司 鋁層的蝕刻後保護方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54158343A (en) * 1978-06-05 1979-12-14 Hitachi Ltd Dry etching method for al and al alloy
JPS55158275A (en) * 1979-05-28 1980-12-09 Hitachi Ltd Corrosion preventing method for al and al alloy
JPS59119744A (ja) * 1982-12-25 1984-07-11 Fujitsu Ltd 半導体装置の製造方法
JPS60169140A (ja) * 1984-02-13 1985-09-02 Hitachi Ltd ドライエツチング方法
JPS61242039A (ja) * 1985-04-19 1986-10-28 Nec Corp 半導体装置
JPS62281331A (ja) * 1986-05-29 1987-12-07 Fujitsu Ltd エツチング方法
JPH02140923A (ja) * 1988-11-22 1990-05-30 Oki Electric Ind Co Ltd アルミニウム合金膜のエッチング方法
US4985113A (en) * 1989-03-10 1991-01-15 Hitachi, Ltd. Sample treating method and apparatus
JP3034259B2 (ja) * 1989-03-31 2000-04-17 株式会社東芝 有機化合物膜の除去方法

Also Published As

Publication number Publication date
EP0485802B1 (de) 1995-06-21
DE69110620T2 (de) 1996-02-29
EP0485802A1 (de) 1992-05-20
JP2663704B2 (ja) 1997-10-15
JPH04165619A (ja) 1992-06-11
US5246888A (en) 1993-09-21
KR950005351B1 (ko) 1995-05-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee