DE69100017D1 - Schaltung zur pruefung von elektrisch programmierbaren speicherzellen. - Google Patents

Schaltung zur pruefung von elektrisch programmierbaren speicherzellen.

Info

Publication number
DE69100017D1
DE69100017D1 DE9191401591T DE69100017T DE69100017D1 DE 69100017 D1 DE69100017 D1 DE 69100017D1 DE 9191401591 T DE9191401591 T DE 9191401591T DE 69100017 T DE69100017 T DE 69100017T DE 69100017 D1 DE69100017 D1 DE 69100017D1
Authority
DE
Germany
Prior art keywords
input
output
read
electrically programmable
situated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE9191401591T
Other languages
English (en)
Other versions
DE69100017T2 (de
Inventor
Cabinet Ballot-Schmit Conan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Publication of DE69100017D1 publication Critical patent/DE69100017D1/de
Application granted granted Critical
Publication of DE69100017T2 publication Critical patent/DE69100017T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5006—Current

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Dram (AREA)
DE9191401591T 1990-06-21 1991-06-14 Schaltung zur pruefung von elektrisch programmierbaren speicherzellen. Expired - Fee Related DE69100017T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9007792A FR2663774B1 (fr) 1990-06-21 1990-06-21 Circuit de test de cellules memoires electriquement programmables.

Publications (2)

Publication Number Publication Date
DE69100017D1 true DE69100017D1 (de) 1993-02-11
DE69100017T2 DE69100017T2 (de) 1993-04-29

Family

ID=9397875

Family Applications (1)

Application Number Title Priority Date Filing Date
DE9191401591T Expired - Fee Related DE69100017T2 (de) 1990-06-21 1991-06-14 Schaltung zur pruefung von elektrisch programmierbaren speicherzellen.

Country Status (4)

Country Link
US (1) US5291448A (de)
EP (1) EP0462876B1 (de)
DE (1) DE69100017T2 (de)
FR (1) FR2663774B1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455517A (en) * 1992-06-09 1995-10-03 International Business Machines Corporation Data output impedance control
DE69326329T2 (de) * 1993-06-28 2000-04-13 Stmicroelectronics S.R.L., Agrate Brianza Speicherzellen-Stromleseverfahren in Mikrosteuergerät
US5675539A (en) * 1994-12-21 1997-10-07 Sgs-Thomson Microelectronics, S.A. Method and circuit for testing memories in integrated circuit form
FR2728717B1 (fr) * 1994-12-21 1997-01-31 Sgs Thomson Microelectronics Procede et circuit de test pour memoire en circuit integre
ITMI20021583A1 (it) * 2002-07-18 2004-01-19 St Microelectronics Srl Metodo di decodifica automatica per la mappatura e la selezione di undispositivo di memoria non volatile con un'interfaccia seriale di comu
US7114032B2 (en) * 2003-07-18 2006-09-26 International Business Machines Corporation Method and system for efficient fragment caching

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4301535A (en) * 1979-07-02 1981-11-17 Mostek Corporation Programmable read only memory integrated circuit with bit-check and deprogramming modes and methods for programming and testing said circuit
JPH0658947B2 (ja) * 1984-02-24 1994-08-03 株式会社日立製作所 半導体メモリ装置の製法
JPH0632222B2 (ja) * 1987-01-14 1994-04-27 日本電気アイシーマイコンシステム株式会社 ラツチ回路
FR2623653B1 (fr) * 1987-11-24 1992-10-23 Sgs Thomson Microelectronics Procede de test de cellules de memoire electriquement programmable et circuit integre correspondant
FR2636464B1 (fr) * 1988-09-14 1990-10-26 Sgs Thomson Microelectronics Memoire eprom avec signature interne concernant notamment le mode de programmation
US5157627A (en) * 1990-07-17 1992-10-20 Crosscheck Technology, Inc. Method and apparatus for setting desired signal level on storage element

Also Published As

Publication number Publication date
FR2663774A1 (fr) 1991-12-27
DE69100017T2 (de) 1993-04-29
EP0462876B1 (de) 1992-12-30
FR2663774B1 (fr) 1992-09-25
EP0462876A1 (de) 1991-12-27
US5291448A (en) 1994-03-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee