DE69031415D1 - Halbleiterlaser-Elemente und Verfahren zu ihrer Herstellung - Google Patents

Halbleiterlaser-Elemente und Verfahren zu ihrer Herstellung

Info

Publication number
DE69031415D1
DE69031415D1 DE69031415T DE69031415T DE69031415D1 DE 69031415 D1 DE69031415 D1 DE 69031415D1 DE 69031415 T DE69031415 T DE 69031415T DE 69031415 T DE69031415 T DE 69031415T DE 69031415 D1 DE69031415 D1 DE 69031415D1
Authority
DE
Germany
Prior art keywords
manufacture
semiconductor laser
laser elements
elements
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69031415T
Other languages
English (en)
Other versions
DE69031415T2 (de
Inventor
Teturo Ijichi
Hiroshi Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1284535A external-priority patent/JPH03145787A/ja
Priority claimed from JP30733989A external-priority patent/JP2786276B2/ja
Priority claimed from JP2018449A external-priority patent/JPH03222488A/ja
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Publication of DE69031415D1 publication Critical patent/DE69031415D1/de
Application granted granted Critical
Publication of DE69031415T2 publication Critical patent/DE69031415T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69031415T 1989-10-31 1990-10-30 Halbleiterlaser-Elemente und Verfahren zu ihrer Herstellung Expired - Fee Related DE69031415T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1284535A JPH03145787A (ja) 1989-10-31 1989-10-31 半導体レーザ素子
JP30733989A JP2786276B2 (ja) 1989-11-27 1989-11-27 半導体レーザ素子
JP2018449A JPH03222488A (ja) 1990-01-29 1990-01-29 半導体レーザ素子及びその製造方法

Publications (2)

Publication Number Publication Date
DE69031415D1 true DE69031415D1 (de) 1997-10-16
DE69031415T2 DE69031415T2 (de) 1998-04-02

Family

ID=27282211

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69031415T Expired - Fee Related DE69031415T2 (de) 1989-10-31 1990-10-30 Halbleiterlaser-Elemente und Verfahren zu ihrer Herstellung

Country Status (6)

Country Link
US (1) US5155738A (de)
EP (1) EP0426419B1 (de)
KR (1) KR940005001B1 (de)
CA (1) CA2028899C (de)
DE (1) DE69031415T2 (de)
ES (1) ES2109231T3 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5202895A (en) * 1990-05-07 1993-04-13 Kabushiki Kaisha Toshiba Semiconductor device having an active layer made of ingaalp material
FR2666455A1 (fr) * 1990-08-31 1992-03-06 Thomson Csf Dispositif optoelectronique et application a la realisation d'un laser et d'un photodetecteur.
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
CN1111840A (zh) * 1991-05-15 1995-11-15 明尼苏达州采矿制造公司 蓝-绿激光二极管的制造方法
JP3129779B2 (ja) * 1991-08-30 2001-01-31 株式会社東芝 半導体レーザ装置
US5212704A (en) * 1991-11-27 1993-05-18 At&T Bell Laboratories Article comprising a strained layer quantum well laser
GB2263814B (en) * 1992-01-17 1996-01-10 Northern Telecom Ltd Semiconductor mixed crystal quantum well device manufacture
US5257276A (en) * 1992-04-03 1993-10-26 California Institute Of Technology Strained layer InP/InGaAs quantum well laser
US5283444A (en) * 1992-07-24 1994-02-01 United Technologies Corporation Increased well depth hact using a strained layer superlattice
JPH06125141A (ja) * 1992-08-25 1994-05-06 Olympus Optical Co Ltd 半導体量子井戸光学素子
JP2706411B2 (ja) * 1992-12-11 1998-01-28 古河電気工業株式会社 歪量子井戸半導体レーザ
WO1994015367A1 (en) * 1992-12-21 1994-07-07 The Furukawa Electric Co., Ltd. Distorted superlattice semiconductor photodetecting element with side-contact structure
US5330932A (en) * 1992-12-31 1994-07-19 Texas Instruments Incorporated Method for fabricating GaInP/GaAs structures
JPH07263811A (ja) * 1994-03-25 1995-10-13 Hitachi Ltd 半導体レーザ装置
TW291585B (de) * 1994-07-04 1996-11-21 Mitsubishi Chem Corp
US5456206A (en) * 1994-12-07 1995-10-10 Electronics And Telecommunications Research Institute Method for two-dimensional epitaxial growth of III-V compound semiconductors
US5756403A (en) * 1995-12-29 1998-05-26 Philips Electronics North America Method of preferentially etching a semiconductor substrate with respect to epitaxial layers
JP3428797B2 (ja) * 1996-02-08 2003-07-22 古河電気工業株式会社 半導体レーザ素子
JP3317335B2 (ja) * 1998-02-10 2002-08-26 富士写真フイルム株式会社 半導体レーザ装置
KR100964399B1 (ko) * 2003-03-08 2010-06-17 삼성전자주식회사 반도체 레이저 다이오드 및 이를 채용한 반도체 레이저다이오드 조립체
US20080009844A1 (en) * 2006-06-26 2008-01-10 Ingeborg Rolle Device for Laser Surgery
CN117374728A (zh) * 2023-12-05 2024-01-09 上海三菲半导体有限公司 一种分布反馈型半导体激光二极管及其制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0650723B2 (ja) * 1984-10-17 1994-06-29 日本電気株式会社 エピタキシヤル成長方法
JP2559373B2 (ja) * 1986-07-14 1996-12-04 株式会社日立製作所 半導体レーザ素子の製造方法
JPS63150986A (ja) * 1986-12-15 1988-06-23 Sharp Corp 半導体レ−ザ
JP2525788B2 (ja) * 1987-01-20 1996-08-21 株式会社東芝 半導体レ−ザ装置の製造方法
JPS63197391A (ja) * 1987-02-12 1988-08-16 Hitachi Ltd 半導体レ−ザ装置
FR2628575A1 (fr) * 1988-03-11 1989-09-15 Thomson Csf Laser de puissance a 0,808 micrometres de longueur d'onde pour pompage du laser yag
JPH0212885A (ja) * 1988-06-29 1990-01-17 Nec Corp 半導体レーザ及びその出射ビームの垂直放射角の制御方法
US5016252A (en) * 1988-09-29 1991-05-14 Sanyo Electric Co., Ltd. Semiconductor laser device
US4984242A (en) * 1989-09-18 1991-01-08 Spectra Diode Laboratories, Inc. GaAs/AlGaAs heterostructure laser containing indium

Also Published As

Publication number Publication date
US5155738A (en) 1992-10-13
KR910008899A (ko) 1991-05-31
KR940005001B1 (ko) 1994-06-09
EP0426419B1 (de) 1997-09-10
CA2028899C (en) 1997-03-04
DE69031415T2 (de) 1998-04-02
ES2109231T3 (es) 1998-01-16
EP0426419A2 (de) 1991-05-08
CA2028899A1 (en) 1991-05-01
EP0426419A3 (en) 1991-11-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee