DE69030977T2 - Pufferschaltung mit einem elektrostatischen Schutz - Google Patents

Pufferschaltung mit einem elektrostatischen Schutz

Info

Publication number
DE69030977T2
DE69030977T2 DE69030977T DE69030977T DE69030977T2 DE 69030977 T2 DE69030977 T2 DE 69030977T2 DE 69030977 T DE69030977 T DE 69030977T DE 69030977 T DE69030977 T DE 69030977T DE 69030977 T2 DE69030977 T2 DE 69030977T2
Authority
DE
Germany
Prior art keywords
buffer circuit
electrostatic protection
electrostatic
protection
buffer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69030977T
Other languages
English (en)
Other versions
DE69030977D1 (de
Inventor
Masashi Itoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69030977D1 publication Critical patent/DE69030977D1/de
Publication of DE69030977T2 publication Critical patent/DE69030977T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08112—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/603—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors with coupled emitters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/62—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors
    • H03K17/6242—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors with several inputs only and without selecting means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/62—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors
    • H03K17/6271—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors with several outputs only and without selecting means

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE69030977T 1989-03-20 1990-03-20 Pufferschaltung mit einem elektrostatischen Schutz Expired - Fee Related DE69030977T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1065862A JPH0766958B2 (ja) 1989-03-20 1989-03-20 静電保護回路

Publications (2)

Publication Number Publication Date
DE69030977D1 DE69030977D1 (de) 1997-08-07
DE69030977T2 true DE69030977T2 (de) 1997-11-27

Family

ID=13299242

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69030977T Expired - Fee Related DE69030977T2 (de) 1989-03-20 1990-03-20 Pufferschaltung mit einem elektrostatischen Schutz

Country Status (5)

Country Link
US (1) US5059831A (de)
EP (1) EP0388896B1 (de)
JP (1) JPH0766958B2 (de)
KR (1) KR930009026B1 (de)
DE (1) DE69030977T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5561373A (en) * 1990-10-09 1996-10-01 Fujitsu Limited Method and device for detecting electrostatic stress applied to a product semiconductor device during each production process
US5311391A (en) * 1993-05-04 1994-05-10 Hewlett-Packard Company Electrostatic discharge protection circuit with dynamic triggering
KR100337925B1 (ko) * 1997-06-28 2002-11-18 주식회사 하이닉스반도체 반도체 정전기 보호회로
US6693780B2 (en) * 2001-08-02 2004-02-17 Koninklijke Philips Electronics N.V. ESD protection devices for a differential pair of transistors
TWI745540B (zh) * 2018-02-05 2021-11-11 力智電子股份有限公司 半導體裝置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3512009A (en) * 1967-05-22 1970-05-12 Nasa Exclusive-or digital logic module
US3742250A (en) * 1971-04-07 1973-06-26 Signetics Corp Active region logic circuit
US3699362A (en) * 1971-05-27 1972-10-17 Ibm Transistor logic circuit
US4028564A (en) * 1971-09-22 1977-06-07 Robert Bosch G.M.B.H. Compensated monolithic integrated current source
NL8006975A (nl) * 1980-12-22 1982-07-16 Delta Kabel Bv Elektronische schakelaar.
JPS58101311A (ja) * 1981-12-11 1983-06-16 Toshiba Corp 多相電圧電流変換回路
JPS59103567A (ja) * 1982-12-01 1984-06-15 Fuji Electric Co Ltd トランジスタの過電流保護回路
JPS6097659A (ja) * 1983-11-01 1985-05-31 Matsushita Electronics Corp 半導体集積回路
JPS60241252A (ja) * 1984-05-16 1985-11-30 Sanyo Electric Co Ltd 半導体集積回路装置
DE3420535C2 (de) * 1984-06-01 1986-04-30 Anton Piller GmbH & Co KG, 3360 Osterode Halbleiter-Modul für eine schnelle Schaltanordnung
JPS60263502A (ja) * 1984-06-08 1985-12-27 Mitsubishi Electric Corp 半導体集積回路装置
US4616142A (en) * 1984-12-31 1986-10-07 Sundstrand Corporation Method of operating parallel-connected semiconductor switch elements
US4761565A (en) * 1987-06-29 1988-08-02 Eastman Kodak Company CCD clock driver circuit
JPH01129451A (ja) * 1987-11-16 1989-05-22 Fujitsu Ltd 半導体装置
US4808461A (en) * 1987-12-14 1989-02-28 Foster-Miller, Inc. Composite structure reinforcement

Also Published As

Publication number Publication date
US5059831A (en) 1991-10-22
KR930009026B1 (ko) 1993-09-18
KR900015308A (ko) 1990-10-26
JPH0766958B2 (ja) 1995-07-19
EP0388896B1 (de) 1997-07-02
EP0388896A3 (de) 1991-10-09
EP0388896A2 (de) 1990-09-26
DE69030977D1 (de) 1997-08-07
JPH02246145A (ja) 1990-10-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee