DE69311001T2 - Diodenstruktur zum Schutz von IC-Anschlüssen - Google Patents

Diodenstruktur zum Schutz von IC-Anschlüssen

Info

Publication number
DE69311001T2
DE69311001T2 DE69311001T DE69311001T DE69311001T2 DE 69311001 T2 DE69311001 T2 DE 69311001T2 DE 69311001 T DE69311001 T DE 69311001T DE 69311001 T DE69311001 T DE 69311001T DE 69311001 T2 DE69311001 T2 DE 69311001T2
Authority
DE
Germany
Prior art keywords
connections
protect
diode structure
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69311001T
Other languages
English (en)
Other versions
DE69311001D1 (de
Inventor
Jean Jimenez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Application granted granted Critical
Publication of DE69311001D1 publication Critical patent/DE69311001D1/de
Publication of DE69311001T2 publication Critical patent/DE69311001T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69311001T 1992-06-25 1993-06-22 Diodenstruktur zum Schutz von IC-Anschlüssen Expired - Fee Related DE69311001T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR929208280A FR2693032B1 (fr) 1992-06-25 1992-06-25 Structure de diodes de protection de plot.

Publications (2)

Publication Number Publication Date
DE69311001D1 DE69311001D1 (de) 1997-07-03
DE69311001T2 true DE69311001T2 (de) 1998-01-08

Family

ID=9431553

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69311001T Expired - Fee Related DE69311001T2 (de) 1992-06-25 1993-06-22 Diodenstruktur zum Schutz von IC-Anschlüssen

Country Status (5)

Country Link
US (2) US5432368A (de)
EP (1) EP0576375B1 (de)
JP (1) JP3342918B2 (de)
DE (1) DE69311001T2 (de)
FR (1) FR2693032B1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6713816B1 (en) 1997-10-21 2004-03-30 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Electrostatic discharge device for integrated circuits
DE102004007655A1 (de) * 2004-02-17 2005-09-08 Infineon Technologies Ag ESD-Schutzvorrichtung für eine Halbleiterschaltung mit einer mit einem Substrat- oder Guard-Ring-Kontakt kontaktierten ESD-Schaltung

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2770341B1 (fr) * 1997-10-24 2000-01-14 Sgs Thomson Microelectronics Dispositif de protection contre des decharges electrostatiques a faible niveau de seuil
US5477078A (en) * 1994-02-18 1995-12-19 Analog Devices, Incorporated Integrated circuit (IC) with a two-terminal diode device to protect metal-oxide-metal capacitors from ESD damage
US5528064A (en) * 1994-08-17 1996-06-18 Texas Instruments Inc. Structure for protecting integrated circuits from electro-static discharge
JP4278721B2 (ja) * 1994-09-30 2009-06-17 テキサス インスツルメンツ インコーポレイテツド 高い逆降伏電圧を有するツェナーダイオード
US5565367A (en) * 1995-03-24 1996-10-15 Hualon Micro Electronic Corporation Protective device for an integrated circit and manufacturing method thereof
US5708289A (en) * 1996-02-29 1998-01-13 Sgs-Thomson Microelectronics, Inc. Pad protection diode structure
US5763918A (en) * 1996-10-22 1998-06-09 International Business Machines Corp. ESD structure that employs a schottky-barrier to reduce the likelihood of latch-up
TW307915B (en) * 1996-11-07 1997-06-11 Winbond Electronics Corp Electrostatic discharge protection circuit
JPH10242159A (ja) * 1997-02-25 1998-09-11 Mitsubishi Electric Corp 定電圧ダイオード内蔵トランジスタ
US5844282A (en) * 1997-03-28 1998-12-01 Nec Corporation Semiconductor device having field effect transistor connected at gate electrode to protective junction diode discharging in the presence of light
KR100214566B1 (ko) * 1997-04-22 1999-08-02 구본준 입력 보호회로
EP0905781A3 (de) * 1997-09-30 2000-11-02 Siemens Aktiengesellschaft ESD-Schutzdiode
US6137143A (en) * 1998-06-30 2000-10-24 Intel Corporation Diode and transistor design for high speed I/O
JP2000223499A (ja) * 1999-01-28 2000-08-11 Mitsumi Electric Co Ltd 静電保護装置
SE9900439D0 (sv) 1999-02-09 1999-02-09 Ericsson Telefon Ab L M Electrostatic discharge protection of integrated circuits
TW479342B (en) * 2001-01-05 2002-03-11 Macronix Int Co Ltd Electrostatic discharge protection circuit of input/output pad
US6768176B1 (en) * 2002-10-09 2004-07-27 Polarfab Llc Electrostatic discharge protection circuit
US20040125533A1 (en) * 2002-12-25 2004-07-01 Tien-Hao Tang Esd protection device
JP2004221274A (ja) * 2003-01-14 2004-08-05 Rohm Co Ltd 半導体装置
US6972476B2 (en) * 2003-11-12 2005-12-06 United Microelectronics Corp. Diode and diode string structure
KR100763223B1 (ko) * 2006-01-18 2007-10-04 삼성전자주식회사 수평 방향의 전류 경로를 가진 정전기 방전 소자 및다이오드와 이들의 제조방법
JP5252830B2 (ja) * 2007-05-10 2013-07-31 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体集積回路
US7940500B2 (en) * 2008-05-23 2011-05-10 Sae Magnetics (H.K.) Ltd. Multi-chip module package including external and internal electrostatic discharge protection circuits, and/or method of making the same
JP5310100B2 (ja) * 2009-03-03 2013-10-09 富士通セミコンダクター株式会社 静電気保護回路および半導体装置
JP2011077484A (ja) * 2009-10-02 2011-04-14 Sanyo Electric Co Ltd 半導体装置
JP2012004350A (ja) * 2010-06-17 2012-01-05 On Semiconductor Trading Ltd 半導体装置及びその製造方法
DE102010054898A1 (de) * 2010-12-17 2012-06-21 Osram Opto Semiconductors Gmbh Träger für einen optoelektronischen Halbleiterchip und Halbleiterchip
CN106158744B (zh) * 2015-04-16 2019-03-05 上海箩箕技术有限公司 静电保护结构及其制作方法、芯片及其制作方法
EP3232479B1 (de) * 2016-04-15 2020-05-06 STMicroelectronics (Tours) SAS Diodenstruktur

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH065748B2 (ja) * 1981-10-05 1994-01-19 日本電気株式会社 半導体装置の静電破壊防止装置
JPS60233846A (ja) * 1984-05-04 1985-11-20 Sanyo Electric Co Ltd 半導体集積回路装置
JP2579989B2 (ja) * 1988-02-23 1997-02-12 富士通株式会社 静電破壊保護装置
JPH01293560A (ja) * 1988-05-20 1989-11-27 Mitsubishi Electric Corp 入力保護手段を有する半導体装置
FR2647959B1 (fr) * 1989-06-02 1991-09-20 Sgs Thomson Microelectronics Procede de fabrication simultanee de transistors mos a canal n et de transistors bipolaires verticaux pnp
JP3551624B2 (ja) * 1996-06-17 2004-08-11 松下電器産業株式会社 機器の表示装置
JPH1032666A (ja) * 1996-07-18 1998-02-03 Ricoh Co Ltd 通信システム

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6713816B1 (en) 1997-10-21 2004-03-30 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Electrostatic discharge device for integrated circuits
DE102004007655A1 (de) * 2004-02-17 2005-09-08 Infineon Technologies Ag ESD-Schutzvorrichtung für eine Halbleiterschaltung mit einer mit einem Substrat- oder Guard-Ring-Kontakt kontaktierten ESD-Schaltung
DE102004007655B4 (de) * 2004-02-17 2013-03-28 Infineon Technologies Ag Halbleiterschaltungen mit ESD-Schutzvorrichtung mit einer mit einem Substrat- oder Guard-Ring-Kontakt kontaktierten ESD-Schutzschaltung
DE102004007655B8 (de) * 2004-02-17 2013-10-10 Infineon Technologies Ag Halbleiterschaltungen mit ESD-Schutzvorrichtung mit einer mit einem Substrat- oder Guard-Ring-Kontakt kontaktierten ESD-Schutzschaltung

Also Published As

Publication number Publication date
US5432368A (en) 1995-07-11
US5646433A (en) 1997-07-08
JP3342918B2 (ja) 2002-11-11
DE69311001D1 (de) 1997-07-03
EP0576375B1 (de) 1997-05-28
FR2693032B1 (fr) 1994-09-30
JPH0669501A (ja) 1994-03-11
FR2693032A1 (fr) 1993-12-31
EP0576375A1 (de) 1993-12-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee