DE69030175T2 - Optische Halbleitervorrichtung - Google Patents

Optische Halbleitervorrichtung

Info

Publication number
DE69030175T2
DE69030175T2 DE69030175T DE69030175T DE69030175T2 DE 69030175 T2 DE69030175 T2 DE 69030175T2 DE 69030175 T DE69030175 T DE 69030175T DE 69030175 T DE69030175 T DE 69030175T DE 69030175 T2 DE69030175 T2 DE 69030175T2
Authority
DE
Germany
Prior art keywords
semiconductor device
optical semiconductor
optical
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69030175T
Other languages
German (de)
English (en)
Other versions
DE69030175D1 (de
Inventor
Hitoshi Nakamura
Shoichi Hanatani
Chiaki Notsu
Tsukuru Ohtoshi
Koji Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Consumer Electronics Co Ltd
Japan Display Inc
Original Assignee
Hitachi Device Engineering Co Ltd
Hitachi Ltd
Hitachi Consumer Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Device Engineering Co Ltd, Hitachi Ltd, Hitachi Consumer Electronics Co Ltd filed Critical Hitachi Device Engineering Co Ltd
Application granted granted Critical
Publication of DE69030175D1 publication Critical patent/DE69030175D1/de
Publication of DE69030175T2 publication Critical patent/DE69030175T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Light Receiving Elements (AREA)
DE69030175T 1989-12-08 1990-12-03 Optische Halbleitervorrichtung Expired - Fee Related DE69030175T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1317519A JPH08111541A (ja) 1989-12-08 1989-12-08 半導体装置

Publications (2)

Publication Number Publication Date
DE69030175D1 DE69030175D1 (de) 1997-04-17
DE69030175T2 true DE69030175T2 (de) 1997-09-18

Family

ID=18089145

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69030175T Expired - Fee Related DE69030175T2 (de) 1989-12-08 1990-12-03 Optische Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US5324959A (ja)
EP (1) EP0440910B1 (ja)
JP (1) JPH08111541A (ja)
CA (1) CA2031734A1 (ja)
DE (1) DE69030175T2 (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2937404B2 (ja) * 1990-04-18 1999-08-23 日本電気株式会社 半導体受光素子
JPH06140624A (ja) * 1992-10-22 1994-05-20 Furukawa Electric Co Ltd:The ショットキー接合素子
KR0125014B1 (ko) * 1993-07-15 1997-12-01 양승택 초고속 광스위칭 소자
JPH07115184A (ja) * 1993-08-24 1995-05-02 Canon Inc 積層型固体撮像装置及びその製造方法
US5753545A (en) * 1994-12-01 1998-05-19 Hughes Electronics Corporation Effective constant doping in a graded compositional alloy
GB2298735A (en) * 1995-03-08 1996-09-11 Sharp Kk Semiconductor device having a miniband
US5889913A (en) * 1995-03-15 1999-03-30 Kabushiki Kaisha Toshiba Optical semiconductor device and method of fabricating the same
JP3014341B2 (ja) * 1997-04-25 2000-02-28 カナレ電気株式会社 量子波干渉層を有したダイオード
US6294795B1 (en) * 1998-04-28 2001-09-25 Canare Electric Co., Ltd. Light-receiving device with quantum-wave interference layers
US6794631B2 (en) * 2002-06-07 2004-09-21 Corning Lasertron, Inc. Three-terminal avalanche photodiode
US7180648B2 (en) * 2005-06-13 2007-02-20 Massachusetts Institute Of Technology Electro-absorption modulator device and methods for fabricating the same
JP6023256B1 (ja) * 2015-04-21 2016-11-09 日本電信電話株式会社 Ｍｓｍ−ｐｄおよび光電子集積回路
CN113284972B (zh) * 2021-05-14 2022-08-26 长春理工大学 一种量子阱雪崩光电二极管

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2652608C3 (de) * 1976-11-19 1979-12-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Anordnung zur Regelung der Ausgangsleistung eines Halbleiterlasers
JPS61224468A (ja) * 1985-03-29 1986-10-06 Fujitsu Ltd 半導体受光素子
US4755860A (en) * 1986-08-05 1988-07-05 American Telephone And Telegraph Company, At&T Bell Laboratories Avalanche photodetector
US5061970A (en) * 1990-06-04 1991-10-29 Motorola, Inc. Energy band leveling modulation doped quantum well

Also Published As

Publication number Publication date
US5324959A (en) 1994-06-28
EP0440910B1 (en) 1997-03-12
EP0440910A1 (en) 1991-08-14
CA2031734A1 (en) 1991-06-09
JPH08111541A (ja) 1996-04-30
DE69030175D1 (de) 1997-04-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee