DE69029762D1 - Diode, verwendbar in Schaltkreisen, die Referenzpotential für DRAM erzeugt - Google Patents

Diode, verwendbar in Schaltkreisen, die Referenzpotential für DRAM erzeugt

Info

Publication number
DE69029762D1
DE69029762D1 DE69029762T DE69029762T DE69029762D1 DE 69029762 D1 DE69029762 D1 DE 69029762D1 DE 69029762 T DE69029762 T DE 69029762T DE 69029762 T DE69029762 T DE 69029762T DE 69029762 D1 DE69029762 D1 DE 69029762D1
Authority
DE
Germany
Prior art keywords
dram
diode
circuits
reference potential
generate reference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69029762T
Other languages
English (en)
Other versions
DE69029762T2 (de
Inventor
Koichi Kishi
Soichi Sugiura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69029762D1 publication Critical patent/DE69029762D1/de
Publication of DE69029762T2 publication Critical patent/DE69029762T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8613—Mesa PN junction diodes

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69029762T 1989-06-20 1990-06-20 Diode, verwendbar in Schaltkreisen, die Referenzpotential für DRAM erzeugt Expired - Fee Related DE69029762T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1157162A JPH0642555B2 (ja) 1989-06-20 1989-06-20 半導体装置

Publications (2)

Publication Number Publication Date
DE69029762D1 true DE69029762D1 (de) 1997-03-06
DE69029762T2 DE69029762T2 (de) 1997-06-05

Family

ID=15643543

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69029762T Expired - Fee Related DE69029762T2 (de) 1989-06-20 1990-06-20 Diode, verwendbar in Schaltkreisen, die Referenzpotential für DRAM erzeugt

Country Status (5)

Country Link
US (1) US5038183A (de)
EP (1) EP0404109B1 (de)
JP (1) JPH0642555B2 (de)
KR (1) KR940008017B1 (de)
DE (1) DE69029762T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6680229B2 (en) 2001-01-26 2004-01-20 Micron Technology, Inc. Method for enhancing vertical growth during the selective formation of silicon, and structures formed using same
JP4162566B2 (ja) 2003-10-10 2008-10-08 沖電気工業株式会社 半導体装置
US8125018B2 (en) * 2005-01-12 2012-02-28 Spansion Llc Memory device having trapezoidal bitlines and method of fabricating same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953254A (en) * 1972-11-07 1976-04-27 Thomson-Csf Method of producing temperature compensated reference diodes utilizing selective epitaxial growth
JPS5234674A (en) * 1975-09-12 1977-03-16 Toshiba Corp Semiconductor device
JPS5950113B2 (ja) * 1975-11-05 1984-12-06 株式会社東芝 半導体装置
JPS5931992B2 (ja) * 1976-12-20 1984-08-06 株式会社日立製作所 半導体整流装置
JPS55133577A (en) * 1979-04-03 1980-10-17 Fujitsu Ltd Method of fabricating diode
US4349394A (en) * 1979-12-06 1982-09-14 Siemens Corporation Method of making a zener diode utilizing gas-phase epitaxial deposition
NL187942C (nl) * 1980-08-18 1992-02-17 Philips Nv Zenerdiode en werkwijze ter vervaardiging daarvan.
JPS5775464A (en) * 1980-10-28 1982-05-12 Semiconductor Res Found Semiconductor device controlled by tunnel injection
JPS5825264A (ja) * 1981-08-07 1983-02-15 Hitachi Ltd 絶縁ゲート型半導体装置
EP0078221A3 (de) * 1981-10-27 1986-06-11 Fairchild Semiconductor Corporation Polykristalline Siliziumdiode mit einem Kontakt aus Metallsilicid
FR2559959B1 (fr) * 1984-02-21 1987-05-22 Thomson Csf Diode hyperfrequence a connexions externes prises au moyen de poutres et son procede de realisation
FR2569056B1 (fr) * 1984-08-08 1989-03-10 Japan Res Dev Corp Transistor a induction statique du type a injection par effet tunnel et circuit integre comprenant un tel transistor

Also Published As

Publication number Publication date
JPH0322570A (ja) 1991-01-30
US5038183A (en) 1991-08-06
DE69029762T2 (de) 1997-06-05
EP0404109A3 (de) 1991-08-28
EP0404109A2 (de) 1990-12-27
KR940008017B1 (ko) 1994-08-31
JPH0642555B2 (ja) 1994-06-01
EP0404109B1 (de) 1997-01-22
KR910001889A (ko) 1991-01-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee