JPS55133577A - Method of fabricating diode - Google Patents

Method of fabricating diode

Info

Publication number
JPS55133577A
JPS55133577A JP4001879A JP4001879A JPS55133577A JP S55133577 A JPS55133577 A JP S55133577A JP 4001879 A JP4001879 A JP 4001879A JP 4001879 A JP4001879 A JP 4001879A JP S55133577 A JPS55133577 A JP S55133577A
Authority
JP
Japan
Prior art keywords
layer
opening
grown
wires
silicon semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4001879A
Other languages
Japanese (ja)
Inventor
Yoshihiro Arimoto
Shuzo Kagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4001879A priority Critical patent/JPS55133577A/en
Publication of JPS55133577A publication Critical patent/JPS55133577A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Abstract

PURPOSE:To elminate the disconnection of electrode and wires owing to stepwise configuration of a diode by forming flat surface thereon. CONSTITUTION:A monocrystal magnesia spinel layer 12 is grown on a p-type silicon semiconductor substrate 11. An opening 12A is perforated at the layer 12 by a selective etching process. The same conducting type monocrystalline silicon as the substrate is homoepitaxially grown in the opening 12A by a vapor phase epitaxial growing process. Subsequently, an n<+>-type silicon semiconductor layer 13 is epitaxially grown in the opening 12A, and the surface of the layer 13 is equalized to the surface of the layer 12. Thereafter, an insulating film, electrodes and wires are suitably formed thereon.
JP4001879A 1979-04-03 1979-04-03 Method of fabricating diode Pending JPS55133577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4001879A JPS55133577A (en) 1979-04-03 1979-04-03 Method of fabricating diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4001879A JPS55133577A (en) 1979-04-03 1979-04-03 Method of fabricating diode

Publications (1)

Publication Number Publication Date
JPS55133577A true JPS55133577A (en) 1980-10-17

Family

ID=12569158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4001879A Pending JPS55133577A (en) 1979-04-03 1979-04-03 Method of fabricating diode

Country Status (1)

Country Link
JP (1) JPS55133577A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0404109A2 (en) * 1989-06-20 1990-12-27 Kabushiki Kaisha Toshiba Diode used in reference potential generating circuit for DRAM

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0404109A2 (en) * 1989-06-20 1990-12-27 Kabushiki Kaisha Toshiba Diode used in reference potential generating circuit for DRAM

Similar Documents

Publication Publication Date Title
IE34306B1 (en) Improvements in method for forming epitaxial crystals or wafers in selected regions of substrates
JPS54157485A (en) Planar semiconductor device
US3235779A (en) Full wave rectifier structure and method of preparing same
JPS55133577A (en) Method of fabricating diode
JPS5617071A (en) Semiconductor device
JPS6451671A (en) Solar cell
JPS5518010A (en) Semiconductor device
JPS5282087A (en) Production of solar cell
JPS5676546A (en) Semiconductor device
JPS5773969A (en) Manufacture of semiconductor device
JPS55117258A (en) Fabrication of semiconductor device
JPS56146249A (en) Semiconductor device
JPS57122572A (en) Manufacture of bipolar semiconductor device
JPS5610925A (en) Preparation of semiconductor device
JPS574115A (en) Manufacture of junction of semiconductors
JPS57178394A (en) Manufacture of semiconductor light emitting device
JPS574155A (en) Semiconductor device
JPS55148479A (en) Hall element device
JPS57159020A (en) Manufacture of semiconductor device
JPS644066A (en) Manufacture of semiconductor device
JPH03270072A (en) Manufacture of semiconductor device
JPS5333069A (en) Production of semiconductor elements
JPS6442145A (en) Manufacture of semiconductor device
JPS5823438A (en) Manufacture of semiconductor device
JPS564276A (en) Semiconductor device