DE69027048D1 - Verfahren zur herstellung von polykristallinen siliziumstäben für halbleiter sowie dafür geeigneter ofen zur thermischen zersetzung - Google Patents

Verfahren zur herstellung von polykristallinen siliziumstäben für halbleiter sowie dafür geeigneter ofen zur thermischen zersetzung

Info

Publication number
DE69027048D1
DE69027048D1 DE69027048T DE69027048T DE69027048D1 DE 69027048 D1 DE69027048 D1 DE 69027048D1 DE 69027048 T DE69027048 T DE 69027048T DE 69027048 T DE69027048 T DE 69027048T DE 69027048 D1 DE69027048 D1 DE 69027048D1
Authority
DE
Germany
Prior art keywords
semiconductors
polycrystalline silicon
thermal decomposition
silicon rods
producing polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69027048T
Other languages
English (en)
Other versions
DE69027048T2 (de
Inventor
Yoshifumi Yatsurugi
Kenichi Nagai
Junji Izawa
Minoru Ohtsuki
Yusuke Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Sumco Techxiv Corp
Komatsu Electronic Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Techxiv Corp, Komatsu Electronic Metals Co Ltd filed Critical Sumco Techxiv Corp
Application granted granted Critical
Publication of DE69027048D1 publication Critical patent/DE69027048D1/de
Publication of DE69027048T2 publication Critical patent/DE69027048T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
DE69027048T 1990-06-27 1990-06-27 Verfahren zur herstellung von polykristallinen siliziumstäben für halbleiter sowie dafür geeigneter ofen zur thermischen zersetzung Expired - Fee Related DE69027048T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1990/000833 WO1992000245A1 (en) 1990-06-27 1990-06-27 Method of producing polycrystalline silicon rods for semiconductors and thermal decomposition furnace therefor

Publications (2)

Publication Number Publication Date
DE69027048D1 true DE69027048D1 (de) 1996-06-20
DE69027048T2 DE69027048T2 (de) 1997-01-02

Family

ID=13986598

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69027048T Expired - Fee Related DE69027048T2 (de) 1990-06-27 1990-06-27 Verfahren zur herstellung von polykristallinen siliziumstäben für halbleiter sowie dafür geeigneter ofen zur thermischen zersetzung

Country Status (3)

Country Link
EP (1) EP0536394B1 (de)
DE (1) DE69027048T2 (de)
WO (1) WO1992000245A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0671409A3 (de) * 1994-03-11 1996-06-12 Hoechst Ag Malonsäurederivate mit antiadhäsiven Eigenschaften.
DE4408248A1 (de) * 1994-03-11 1995-09-14 Hoechst Ag Physiologisch verträgliche und physiologisch abbaubare Kohlenhydrat-Mimetika, ein Verfahren zur Herstellung und ihre Verwendung
CN102190304B (zh) * 2010-03-08 2015-04-15 三菱综合材料株式会社 三氯硅烷制造装置
CN102190305B (zh) * 2010-03-15 2014-10-29 三菱综合材料株式会社 三氯硅烷制造装置
WO2011128729A1 (en) * 2010-04-12 2011-10-20 Memc Electronic Materials, S.P.A. Bell jar for siemens reactor including thermal radiation shield
EP2423352A1 (de) * 2010-08-24 2012-02-29 Centesil S.L. Wärmeschutzschild für Reaktoren bei der Herstellung von Silizium
DE102011084137A1 (de) 2011-10-07 2013-04-11 Wacker Chemie Ag Vorrichtung und Verfahren zur Abscheidung von polykristallinemSilicium
CN102923710A (zh) * 2012-11-19 2013-02-13 中国恩菲工程技术有限公司 多晶硅还原炉
US10208381B2 (en) 2014-12-23 2019-02-19 Rec Silicon Inc Apparatus and method for managing a temperature profile using reflective energy in a thermal decomposition reactor
CN114007980B (zh) * 2019-07-12 2024-03-08 株式会社德山 多晶硅的制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53106626A (en) * 1977-03-02 1978-09-16 Komatsu Mfg Co Ltd Method of making high purity rod silicon and appratus therefor
JPS61101410A (ja) * 1984-10-24 1986-05-20 Hiroshi Ishizuka 多結晶珪素の製造法及びそのための装置
US4805556A (en) * 1988-01-15 1989-02-21 Union Carbide Corporation Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane

Also Published As

Publication number Publication date
EP0536394A1 (de) 1993-04-14
EP0536394A4 (en) 1993-05-26
WO1992000245A1 (en) 1992-01-09
DE69027048T2 (de) 1997-01-02
EP0536394B1 (de) 1996-05-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee