DE69026828D1 - Verbesserte Abfühlschaltung für Speicheranordnungen, wie nichtflüchtige Speicher, mit verbesserter Abfühlunterscheidung - Google Patents

Verbesserte Abfühlschaltung für Speicheranordnungen, wie nichtflüchtige Speicher, mit verbesserter Abfühlunterscheidung

Info

Publication number
DE69026828D1
DE69026828D1 DE69026828T DE69026828T DE69026828D1 DE 69026828 D1 DE69026828 D1 DE 69026828D1 DE 69026828 T DE69026828 T DE 69026828T DE 69026828 T DE69026828 T DE 69026828T DE 69026828 D1 DE69026828 D1 DE 69026828D1
Authority
DE
Germany
Prior art keywords
improved sensing
memory arrays
volatile memories
discrimination
sensing circuitry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69026828T
Other languages
English (en)
Other versions
DE69026828T2 (de
Inventor
Luigi Pascucci
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL filed Critical SGS Thomson Microelectronics SRL
Publication of DE69026828D1 publication Critical patent/DE69026828D1/de
Application granted granted Critical
Publication of DE69026828T2 publication Critical patent/DE69026828T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/26Sensing or reading circuits; Data output circuits
    • G11C16/28Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14Dummy cell management; Sense reference voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
DE69026828T 1990-12-13 1990-12-13 Verbesserte Abfühlschaltung für Speicheranordnungen, wie nichtflüchtige Speicher, mit verbesserter Abfühlunterscheidung Expired - Fee Related DE69026828T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP90830583A EP0491105B1 (de) 1990-12-13 1990-12-13 Verbesserte Abfühlschaltung für Speicheranordnungen, wie nichtflüchtige Speicher, mit verbesserter Abfühlunterscheidung

Publications (2)

Publication Number Publication Date
DE69026828D1 true DE69026828D1 (de) 1996-06-05
DE69026828T2 DE69026828T2 (de) 1996-10-02

Family

ID=8206042

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69026828T Expired - Fee Related DE69026828T2 (de) 1990-12-13 1990-12-13 Verbesserte Abfühlschaltung für Speicheranordnungen, wie nichtflüchtige Speicher, mit verbesserter Abfühlunterscheidung

Country Status (5)

Country Link
US (1) US5270590A (de)
EP (1) EP0491105B1 (de)
JP (1) JP3233424B2 (de)
KR (1) KR920013463A (de)
DE (1) DE69026828T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1246241B (it) * 1990-02-23 1994-11-17 Sgs Thomson Microelectronics Circuito per la lettura dell'informazione contenuta in celle di memoria non volatili
EP0833340B1 (de) * 1996-09-30 2003-04-02 STMicroelectronics S.r.l. Leseschaltung für Halbleiter-Speicherzellen
US5999482A (en) * 1997-10-24 1999-12-07 Artisan Components, Inc. High speed memory self-timing circuitry and methods for implementing the same
WO1999022377A1 (en) * 1997-10-25 1999-05-06 Artisan Components, Inc. Low power differential signal transition techniques for use in memory devices
DE10017921A1 (de) * 2000-04-11 2001-10-18 Infineon Technologies Ag Leseverstärker
JP4996023B2 (ja) * 2001-09-14 2012-08-08 中越合金鋳工株式会社 鉛含有銅合金材からの鉛溶出防止方法
US7561472B2 (en) 2006-09-11 2009-07-14 Micron Technology, Inc. NAND architecture memory with voltage sensing
US12087397B1 (en) 2020-04-06 2024-09-10 Crossbar, Inc. Dynamic host allocation of physical unclonable feature operation for resistive switching memory
CN115273934A (zh) 2020-04-06 2022-11-01 昕原半导体(上海)有限公司 利用芯片上电阻存储器阵列的不可克隆特性的独特芯片标识符
US11823739B2 (en) 2020-04-06 2023-11-21 Crossbar, Inc. Physically unclonable function (PUF) generation involving high side programming of bits

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1221780B (it) * 1988-01-29 1990-07-12 Sgs Thomson Microelectronics Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos
JPH01220295A (ja) * 1988-02-29 1989-09-01 Nec Corp 半導体記憶装置
KR0137768B1 (ko) * 1988-11-23 1998-06-01 존 지. 웨브 단일 트랜지스터 메모리 셀과 함께 사용하는 고속 자동 센스 증폭기
JPH0346197A (ja) * 1989-07-13 1991-02-27 Fujitsu Ltd 半導体記憶装置
JP2647527B2 (ja) * 1990-02-21 1997-08-27 シャープ株式会社 センス増幅回路

Also Published As

Publication number Publication date
JP3233424B2 (ja) 2001-11-26
US5270590A (en) 1993-12-14
JPH04291095A (ja) 1992-10-15
DE69026828T2 (de) 1996-10-02
KR920013463A (ko) 1992-07-29
EP0491105B1 (de) 1996-05-01
EP0491105A1 (de) 1992-06-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee