DE69026828D1 - Verbesserte Abfühlschaltung für Speicheranordnungen, wie nichtflüchtige Speicher, mit verbesserter Abfühlunterscheidung - Google Patents
Verbesserte Abfühlschaltung für Speicheranordnungen, wie nichtflüchtige Speicher, mit verbesserter AbfühlunterscheidungInfo
- Publication number
- DE69026828D1 DE69026828D1 DE69026828T DE69026828T DE69026828D1 DE 69026828 D1 DE69026828 D1 DE 69026828D1 DE 69026828 T DE69026828 T DE 69026828T DE 69026828 T DE69026828 T DE 69026828T DE 69026828 D1 DE69026828 D1 DE 69026828D1
- Authority
- DE
- Germany
- Prior art keywords
- improved sensing
- memory arrays
- volatile memories
- discrimination
- sensing circuitry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP90830583A EP0491105B1 (de) | 1990-12-13 | 1990-12-13 | Verbesserte Abfühlschaltung für Speicheranordnungen, wie nichtflüchtige Speicher, mit verbesserter Abfühlunterscheidung |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69026828D1 true DE69026828D1 (de) | 1996-06-05 |
DE69026828T2 DE69026828T2 (de) | 1996-10-02 |
Family
ID=8206042
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69026828T Expired - Fee Related DE69026828T2 (de) | 1990-12-13 | 1990-12-13 | Verbesserte Abfühlschaltung für Speicheranordnungen, wie nichtflüchtige Speicher, mit verbesserter Abfühlunterscheidung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5270590A (de) |
EP (1) | EP0491105B1 (de) |
JP (1) | JP3233424B2 (de) |
KR (1) | KR920013463A (de) |
DE (1) | DE69026828T2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1246241B (it) * | 1990-02-23 | 1994-11-17 | Sgs Thomson Microelectronics | Circuito per la lettura dell'informazione contenuta in celle di memoria non volatili |
EP0833340B1 (de) * | 1996-09-30 | 2003-04-02 | STMicroelectronics S.r.l. | Leseschaltung für Halbleiter-Speicherzellen |
US5999482A (en) * | 1997-10-24 | 1999-12-07 | Artisan Components, Inc. | High speed memory self-timing circuitry and methods for implementing the same |
WO1999022377A1 (en) * | 1997-10-25 | 1999-05-06 | Artisan Components, Inc. | Low power differential signal transition techniques for use in memory devices |
DE10017921A1 (de) * | 2000-04-11 | 2001-10-18 | Infineon Technologies Ag | Leseverstärker |
JP4996023B2 (ja) * | 2001-09-14 | 2012-08-08 | 中越合金鋳工株式会社 | 鉛含有銅合金材からの鉛溶出防止方法 |
US7561472B2 (en) | 2006-09-11 | 2009-07-14 | Micron Technology, Inc. | NAND architecture memory with voltage sensing |
US12087397B1 (en) | 2020-04-06 | 2024-09-10 | Crossbar, Inc. | Dynamic host allocation of physical unclonable feature operation for resistive switching memory |
CN115273934A (zh) | 2020-04-06 | 2022-11-01 | 昕原半导体(上海)有限公司 | 利用芯片上电阻存储器阵列的不可克隆特性的独特芯片标识符 |
US11823739B2 (en) | 2020-04-06 | 2023-11-21 | Crossbar, Inc. | Physically unclonable function (PUF) generation involving high side programming of bits |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1221780B (it) * | 1988-01-29 | 1990-07-12 | Sgs Thomson Microelectronics | Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos |
JPH01220295A (ja) * | 1988-02-29 | 1989-09-01 | Nec Corp | 半導体記憶装置 |
KR0137768B1 (ko) * | 1988-11-23 | 1998-06-01 | 존 지. 웨브 | 단일 트랜지스터 메모리 셀과 함께 사용하는 고속 자동 센스 증폭기 |
JPH0346197A (ja) * | 1989-07-13 | 1991-02-27 | Fujitsu Ltd | 半導体記憶装置 |
JP2647527B2 (ja) * | 1990-02-21 | 1997-08-27 | シャープ株式会社 | センス増幅回路 |
-
1990
- 1990-12-13 DE DE69026828T patent/DE69026828T2/de not_active Expired - Fee Related
- 1990-12-13 EP EP90830583A patent/EP0491105B1/de not_active Expired - Lifetime
-
1991
- 1991-12-10 KR KR1019910022529A patent/KR920013463A/ko not_active Application Discontinuation
- 1991-12-12 JP JP32907491A patent/JP3233424B2/ja not_active Expired - Fee Related
- 1991-12-12 US US07/806,118 patent/US5270590A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP3233424B2 (ja) | 2001-11-26 |
US5270590A (en) | 1993-12-14 |
JPH04291095A (ja) | 1992-10-15 |
DE69026828T2 (de) | 1996-10-02 |
KR920013463A (ko) | 1992-07-29 |
EP0491105B1 (de) | 1996-05-01 |
EP0491105A1 (de) | 1992-06-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |