DE69022287D1 - Halbleiterspeicheranordnung mit selbstkorrigierender Funktion. - Google Patents

Halbleiterspeicheranordnung mit selbstkorrigierender Funktion.

Info

Publication number
DE69022287D1
DE69022287D1 DE69022287T DE69022287T DE69022287D1 DE 69022287 D1 DE69022287 D1 DE 69022287D1 DE 69022287 T DE69022287 T DE 69022287T DE 69022287 T DE69022287 T DE 69022287T DE 69022287 D1 DE69022287 D1 DE 69022287D1
Authority
DE
Germany
Prior art keywords
data
read
memory cells
memory cell
read circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69022287T
Other languages
English (en)
Other versions
DE69022287T2 (de
Inventor
Kikuzu Sawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Application granted granted Critical
Publication of DE69022287D1 publication Critical patent/DE69022287D1/de
Publication of DE69022287T2 publication Critical patent/DE69022287T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1076—Parity data used in redundant arrays of independent storages, e.g. in RAID systems
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
    • G06F2201/81—Threshold

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
DE69022287T 1989-05-25 1990-05-03 Halbleiterspeicheranordnung mit selbstkorrigierender Funktion. Expired - Lifetime DE69022287T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1132177A JPH0664918B2 (ja) 1989-05-25 1989-05-25 自己訂正機能を有する半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69022287D1 true DE69022287D1 (de) 1995-10-19
DE69022287T2 DE69022287T2 (de) 1996-05-02

Family

ID=15075179

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69022287T Expired - Lifetime DE69022287T2 (de) 1989-05-25 1990-05-03 Halbleiterspeicheranordnung mit selbstkorrigierender Funktion.

Country Status (4)

Country Link
US (1) US5151906A (de)
EP (1) EP0399258B1 (de)
JP (1) JPH0664918B2 (de)
DE (1) DE69022287T2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5657332A (en) * 1992-05-20 1997-08-12 Sandisk Corporation Soft errors handling in EEPROM devices
US5532962A (en) * 1992-05-20 1996-07-02 Sandisk Corporation Soft errors handling in EEPROM devices
US5428621A (en) * 1992-09-21 1995-06-27 Sundisk Corporation Latent defect handling in EEPROM devices
US6026052A (en) * 1994-05-03 2000-02-15 Fujitsu Limited Programmable semiconductor memory device
KR0168896B1 (ko) * 1993-09-20 1999-02-01 세키자와 다다시 패리티에 의해 에러를 수정할 수 있는 반도체 메모리장치
US5909449A (en) * 1997-09-08 1999-06-01 Invox Technology Multibit-per-cell non-volatile memory with error detection and correction
DE69732637T2 (de) * 1997-12-22 2005-12-29 Stmicroelectronics S.R.L., Agrate Brianza Selbsttest und Korrektur von Ladungsverlustfehlern in einem Sektorenlöschbaren und-programmierbaren Flashspeicher
FR2802734B1 (fr) * 1999-12-15 2002-04-26 St Microelectronics Sa Procede de correction d'un bit dans une chaine de bits
FR2802697B1 (fr) * 1999-12-15 2005-03-04 St Microelectronics Sa Procede de lecture d'une cellule memoire non volatile
JP4877894B2 (ja) * 2001-07-04 2012-02-15 ルネサスエレクトロニクス株式会社 半導体装置
US7051264B2 (en) * 2001-11-14 2006-05-23 Monolithic System Technology, Inc. Error correcting memory and method of operating same
US7173852B2 (en) * 2003-10-03 2007-02-06 Sandisk Corporation Corrected data storage and handling methods
US7012835B2 (en) * 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
US7392456B2 (en) * 2004-11-23 2008-06-24 Mosys, Inc. Predictive error correction code generation facilitating high-speed byte-write in a semiconductor memory
US7395404B2 (en) * 2004-12-16 2008-07-01 Sandisk Corporation Cluster auto-alignment for storing addressable data packets in a non-volatile memory array
US7315916B2 (en) * 2004-12-16 2008-01-01 Sandisk Corporation Scratch pad block
US7886204B2 (en) * 2006-09-27 2011-02-08 Sandisk Corporation Methods of cell population distribution assisted read margining
US7716538B2 (en) 2006-09-27 2010-05-11 Sandisk Corporation Memory with cell population distribution assisted read margining
US7477547B2 (en) * 2007-03-28 2009-01-13 Sandisk Corporation Flash memory refresh techniques triggered by controlled scrub data reads
US7573773B2 (en) * 2007-03-28 2009-08-11 Sandisk Corporation Flash memory with data refresh triggered by controlled scrub data reads
US8687421B2 (en) 2011-11-21 2014-04-01 Sandisk Technologies Inc. Scrub techniques for use with dynamic read
US8559249B1 (en) * 2012-03-27 2013-10-15 Apple Inc. Memory with redundant sense amplifier
US9230689B2 (en) 2014-03-17 2016-01-05 Sandisk Technologies Inc. Finding read disturbs on non-volatile memories
US9552171B2 (en) 2014-10-29 2017-01-24 Sandisk Technologies Llc Read scrub with adaptive counter management
US9978456B2 (en) 2014-11-17 2018-05-22 Sandisk Technologies Llc Techniques for reducing read disturb in partially written blocks of non-volatile memory
US9349479B1 (en) 2014-11-18 2016-05-24 Sandisk Technologies Inc. Boundary word line operation in nonvolatile memory
US9449700B2 (en) 2015-02-13 2016-09-20 Sandisk Technologies Llc Boundary word line search and open block read methods with reduced read disturb
US9892791B2 (en) * 2015-06-16 2018-02-13 Sandisk Technologies Llc Fast scan to detect bit line discharge time
US9653154B2 (en) 2015-09-21 2017-05-16 Sandisk Technologies Llc Write abort detection for multi-state memories

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3205473A1 (de) * 1982-02-16 1983-08-25 Siemens AG, 1000 Berlin und 8000 München Verfahren und anordnung zur funktionspruefung eines elektrisch wortweise umprogrammierbaren speichers
US4612630A (en) * 1984-07-27 1986-09-16 Harris Corporation EEPROM margin testing design
JPS62114200A (ja) * 1985-11-13 1987-05-25 Mitsubishi Electric Corp 半導体メモリ装置
JP2509297B2 (ja) * 1987-08-31 1996-06-19 沖電気工業株式会社 自己訂正機能付半導体記憶装置及びマイクロコンピュ―タ
JPS6476596A (en) * 1987-09-18 1989-03-22 Oki Electric Ind Co Ltd Error of eeprom detecting device

Also Published As

Publication number Publication date
DE69022287T2 (de) 1996-05-02
US5151906A (en) 1992-09-29
EP0399258B1 (de) 1995-09-13
JPH02310899A (ja) 1990-12-26
JPH0664918B2 (ja) 1994-08-22
EP0399258A2 (de) 1990-11-28
EP0399258A3 (de) 1992-01-02

Similar Documents

Publication Publication Date Title
DE69022287D1 (de) Halbleiterspeicheranordnung mit selbstkorrigierender Funktion.
HK1001481A1 (en) Eeprom system with bit error detecting function
KR870002591A (ko) 시리얼 데이터 기억 반도체 메모리
DE3587143D1 (de) Halbleiterspeichergeraet mit fehlererkennung/korrekturfunktion.
EP0608967A3 (de) Speicheranordnungen
KR890008829A (ko) 반도체 기억장치
ATE396482T1 (de) Direktzugriffsspeicher mit programmierbaren leitern und verfahren zu seinem lesen
EP0305987A3 (en) Self-correcting semiconductor memory device and microcomputer incorporating the same
EP0347909A3 (de) Nichtflüchtige Speichereinrichtung, die in einem weiten Bereich des Spannungspegels der Leistungsquelle stabil arbeitet
DE3750460D1 (de) Halbleiterspeichergerät.
EP0451595A3 (en) Short circuit detector circuit for memory array
EP0251429A3 (en) Non-volatile semiconductor memory
EP0347935A3 (de) Halbleiterspeicheranordnung
EP0193210A3 (de) Halbleiterspeichergerät mit einer eingebauten Prüfschaltung
KR850008566A (ko) 대치용장 회로를 가진 반도체집적 회로
KR910005459A (ko) 반도체메모리장치 및 그 제조방법
DE3576755D1 (de) Integrierter halbleiterspeicher.
US4901281A (en) Semiconductor memory device having two column transfer gate transistor groups independently provided for a sense amplifier and a programmed circuit
DE3583493D1 (de) Integrierter halbleiterspeicher.
TW358940B (en) Semiconductor storage device
KR850001615A (ko) 집적 메모리회로
DE69021996D1 (de) Bitfehlerkorrekturschaltung für einen nichtflüchtigen Speicher.
KR930020430A (ko) 불휘발성 반도체 기억장치
US5134384A (en) Data coincidence detecting circuit
US4628250A (en) Power conserving CMOS reference voltage source

Legal Events

Date Code Title Description
8364 No opposition during term of opposition