DE69022146D1 - Verfahren zur Herstellung einer Halbleiteranordnung durch "Wire-bonding". - Google Patents

Verfahren zur Herstellung einer Halbleiteranordnung durch "Wire-bonding".

Info

Publication number
DE69022146D1
DE69022146D1 DE69022146T DE69022146T DE69022146D1 DE 69022146 D1 DE69022146 D1 DE 69022146D1 DE 69022146 T DE69022146 T DE 69022146T DE 69022146 T DE69022146 T DE 69022146T DE 69022146 D1 DE69022146 D1 DE 69022146D1
Authority
DE
Germany
Prior art keywords
producing
wire bonding
semiconductor arrangement
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69022146T
Other languages
English (en)
Other versions
DE69022146T2 (de
Inventor
Kazuhisa Ikenoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69022146D1 publication Critical patent/DE69022146D1/de
Application granted granted Critical
Publication of DE69022146T2 publication Critical patent/DE69022146T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49537—Plurality of lead frames mounted in one device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/4951—Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49586—Insulating layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
DE69022146T 1989-06-28 1990-06-05 Verfahren zur Herstellung einer Halbleiteranordnung durch "Wire-bonding". Expired - Fee Related DE69022146T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1163686A JPH0650749B2 (ja) 1989-06-28 1989-06-28 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE69022146D1 true DE69022146D1 (de) 1995-10-12
DE69022146T2 DE69022146T2 (de) 1996-03-21

Family

ID=15778670

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69022146T Expired - Fee Related DE69022146T2 (de) 1989-06-28 1990-06-05 Verfahren zur Herstellung einer Halbleiteranordnung durch "Wire-bonding".

Country Status (4)

Country Link
EP (1) EP0410116B1 (de)
JP (1) JPH0650749B2 (de)
KR (1) KR930009014B1 (de)
DE (1) DE69022146T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0693469B2 (ja) * 1989-11-28 1994-11-16 株式会社東芝 樹脂封止型半導体装置
US9859680B2 (en) 2013-12-17 2018-01-02 Lasermax, Inc. Shock resistant laser module

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5966157A (ja) * 1982-10-08 1984-04-14 Fujitsu Ltd 半導体装置及びその製造方法
JP2522524B2 (ja) * 1988-08-06 1996-08-07 株式会社東芝 半導体装置の製造方法

Also Published As

Publication number Publication date
EP0410116A3 (en) 1992-05-06
KR910001958A (ko) 1991-01-31
JPH0650749B2 (ja) 1994-06-29
EP0410116B1 (de) 1995-09-06
JPH0330344A (ja) 1991-02-08
DE69022146T2 (de) 1996-03-21
KR930009014B1 (ko) 1993-09-18
EP0410116A2 (de) 1991-01-30

Similar Documents

Publication Publication Date Title
DE69527017D1 (de) Verfahren zur Herstellung einer Halbleiterpackung integral mit Halbleiterchip
DE69021438D1 (de) Verfahren zur Herstellung einer Flip-Chip-Lötstruktur für Anordnungen mit Gold-Metallisierung.
DE3877018D1 (de) Verfahren zur herstellung eines supraleitenden drahtes aus mehrstoffoxid-keramik.
DE69023956D1 (de) Verfahren zur Herstellung eines III-V-Verbindungshalbleiterbauelementes.
DE3583183D1 (de) Verfahren zur herstellung eines halbleitersubstrates.
DE3585587D1 (de) Verfahren zur herstellung eines halbleiterbeschleunigungsmessers.
DE69015216D1 (de) Verfahren zur Herstellung einer Halbleitervorrichtung.
DE69213314D1 (de) Verfahren zur Herstellung von hochfestem Draht aus einer Legierung
DE3576245D1 (de) Verfahren zur herstellung eines nichtfluechtigen halbleiter-eeprom-elementes.
DE3483444D1 (de) Verfahren zur herstellung eines halbleiterbauelementes.
DE68907507D1 (de) Verfahren zur herstellung einer halbleitervorrichtung.
DE3485924D1 (de) Verfahren zur herstellung einer halbleiterlaservorrichtung.
DE69229661D1 (de) Verfahren zur Herstellung einer Anschlusstruktur für eine Halbleiteranordnung
DE3686315D1 (de) Verfahren zur herstellung einer halbleiterstruktur.
DE3584416D1 (de) Verfahren zur herstellung einer lichtemittierenden diode aus einem verbindungshalbleiter.
DE69023558D1 (de) Verfahren zur Herstellung einer Halbleitervorrichtung.
DE68924366D1 (de) Verfahren zur Herstellung einer Halbleitervorrichtung.
DE69001201D1 (de) Verfahren zur herstellung einer lackschicht "japanischer art".
DE69014254D1 (de) Verfahren zur Herstellung einer Silicium enthaltenden Aluminiumlegierung.
DE69016955D1 (de) Verfahren zur Herstellung einer Halbleiteranordnung.
DE69028397D1 (de) Verfahren zur herstellung einer halbleitervorrichtung
DE3582143D1 (de) Verfahren zur herstellung einer halbleitervorrichtung.
DE69024731D1 (de) Verfahren zur Herstellung einer plastikumhüllten Halbleiteranordnung
DE3779802D1 (de) Verfahren zur herstellung einer halbleiteranordnung.
DE3577778D1 (de) Verfahren zur herstellung einer halbleiteranordnung und nach diesem verfahren hergestellte anordnung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee