DE69021630D1 - Speicher mit verbesserter Zugriffszeit, bei dem kein Adressenübergang ermittelt wird. - Google Patents

Speicher mit verbesserter Zugriffszeit, bei dem kein Adressenübergang ermittelt wird.

Info

Publication number
DE69021630D1
DE69021630D1 DE69021630T DE69021630T DE69021630D1 DE 69021630 D1 DE69021630 D1 DE 69021630D1 DE 69021630 T DE69021630 T DE 69021630T DE 69021630 T DE69021630 T DE 69021630T DE 69021630 D1 DE69021630 D1 DE 69021630D1
Authority
DE
Germany
Prior art keywords
memory
determined
access time
address transition
improved access
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69021630T
Other languages
English (en)
Other versions
DE69021630T2 (de
Inventor
George Scott Nogle
Stephen T Flannagan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DE69021630D1 publication Critical patent/DE69021630D1/de
Publication of DE69021630T2 publication Critical patent/DE69021630T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/18—Luminescent screens
    • H01J29/20—Luminescent screens characterised by the luminescent material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
DE69021630T 1989-04-27 1990-03-19 Speicher mit verbesserter Zugriffszeit, bei dem kein Adressenübergang ermittelt wird. Expired - Lifetime DE69021630T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/344,200 US4964083A (en) 1989-04-27 1989-04-27 Non-address transition detection memory with improved access time

Publications (2)

Publication Number Publication Date
DE69021630D1 true DE69021630D1 (de) 1995-09-21
DE69021630T2 DE69021630T2 (de) 1996-04-04

Family

ID=23349483

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69021630T Expired - Lifetime DE69021630T2 (de) 1989-04-27 1990-03-19 Speicher mit verbesserter Zugriffszeit, bei dem kein Adressenübergang ermittelt wird.

Country Status (5)

Country Link
US (1) US4964083A (de)
EP (1) EP0397986B1 (de)
JP (1) JP2535242B2 (de)
KR (1) KR960011560B1 (de)
DE (1) DE69021630T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970001345B1 (ko) * 1993-07-28 1997-02-05 삼성전자 주식회사 레벨 쉬프터
US5610573A (en) * 1995-09-13 1997-03-11 Lsi Logic Corporation Method and apparatus for detecting assertion of multiple signals
US5781469A (en) * 1997-01-24 1998-07-14 Atmel Corporation Bitline load and precharge structure for an SRAM memory
US6532176B1 (en) * 2001-09-25 2003-03-11 Tower Semiconductor Ltd. Non-volatile memory array with equalized bit line potentials
JP2004192694A (ja) * 2002-12-10 2004-07-08 Renesas Technology Corp 半導体記憶装置
US7158432B1 (en) 2005-09-01 2007-01-02 Freescale Semiconductor, Inc. Memory with robust data sensing and method for sensing data
US8077533B2 (en) 2006-01-23 2011-12-13 Freescale Semiconductor, Inc. Memory and method for sensing data in a memory using complementary sensing scheme

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032912B2 (ja) * 1979-09-13 1985-07-31 株式会社東芝 Ｃｍｏｓセンスアンプ回路
US4485319A (en) * 1982-02-26 1984-11-27 Motorola, Inc. Bubble memory sense amplifier
GB2133946B (en) * 1983-01-14 1986-02-26 Itt Ind Ltd Memory output circuit
JPS62170097A (ja) * 1986-01-21 1987-07-27 Fujitsu Ltd 半導体記憶装置
US4723112A (en) * 1986-09-19 1988-02-02 Tektronix, Inc. Level shift circuit for differential signals
US4910713A (en) * 1988-06-27 1990-03-20 Digital Euipment Corporation High input impedance, strobed CMOS differential sense amplifier

Also Published As

Publication number Publication date
JPH02301099A (ja) 1990-12-13
KR960011560B1 (ko) 1996-08-23
DE69021630T2 (de) 1996-04-04
JP2535242B2 (ja) 1996-09-18
EP0397986B1 (de) 1995-08-16
EP0397986A3 (de) 1993-01-27
KR900017034A (ko) 1990-11-15
EP0397986A2 (de) 1990-11-22
US4964083A (en) 1990-10-16

Similar Documents

Publication Publication Date Title
DE69022609D1 (de) Dynamische Speicherzelle mit wahlfreiem Zugriff.
DE69016805D1 (de) Dynamischer Direktzugriffsspeicher mit verbesserter Wortleitungssteuerung.
DE69002182D1 (de) Speicher.
DE3771288D1 (de) Dynamischer speicher mit wahlfreiem zugriff.
DE68917792D1 (de) Speicher.
DE69013201D1 (de) Spielautomat.
DE3876415D1 (de) Dynamischer direktzugriffsspeicher.
DE69016094D1 (de) Video-Direktzugriffsspeicher.
DE69004245D1 (de) Semi-thermoplastische Formmasse mit thermostabilem Formerinnerungsvermögen.
DE69422120T2 (de) Synchroner dynamischer Speicher mit wahlfreiem Zugriff
DE68902193D1 (de) Datenspeicheranordnung.
FI892534A (fi) Foerfarande foer framstaellning av 1,3-dioler av epoxider.
DE68919718D1 (de) Pseudo-statischer Direktzugriffspeicher.
DE3852131D1 (de) Speicherkarte.
DE68919402D1 (de) Speicherkarte.
DE69021617D1 (de) Speicher, der verteiltes Laden von Datenleitungen verwendet.
FI902774A0 (fi) N-imidazolyl- och n -imidazolylmetylderivat av substituerade, bicykliska foereningar.
DE69021630D1 (de) Speicher mit verbesserter Zugriffszeit, bei dem kein Adressenübergang ermittelt wird.
DE69014189D1 (de) Speicher mit verbesserter Lesezeit.
DE3862352D1 (de) Waermespeicher, insbesondere latentwaermespeicher.
DE68918894D1 (de) Statische MESFET-Speicherzelle mit wahlfreiem Zugriff.
FI892387A0 (fi) Mellanprodukter foer framstaellning av 1,4-dihydro-4-oxokinolin-3-karboxylsyraestrar.
FI883856A (fi) Kretsanordning foer generering av i,q-vaogformer.
FI911590A (fi) Oxidisk superledande traod, foerfarande foer framstaellning av samma samt foerfarande foer behandling av samma.
DE68918101D1 (de) Speicher mit Seitenmodus.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: FREESCALE SEMICONDUCTOR, INC. (N.D.GES.D. STAATES