DE69021284D1 - Verfahren zur Herstellung und Verwendung einer Hochauflösungs-Lithographie-Maske. - Google Patents
Verfahren zur Herstellung und Verwendung einer Hochauflösungs-Lithographie-Maske.Info
- Publication number
- DE69021284D1 DE69021284D1 DE69021284T DE69021284T DE69021284D1 DE 69021284 D1 DE69021284 D1 DE 69021284D1 DE 69021284 T DE69021284 T DE 69021284T DE 69021284 T DE69021284 T DE 69021284T DE 69021284 D1 DE69021284 D1 DE 69021284D1
- Authority
- DE
- Germany
- Prior art keywords
- making
- lithography mask
- resolution lithography
- resolution
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2049—Exposure; Apparatus therefor using a cantilever
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
- H01J2237/31759—Lithography using particular beams or near-field effects, e.g. STM-like techniques using near-field effects, e.g. STM
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
- Y10S977/855—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Plasma & Fusion (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/367,815 US5049461A (en) | 1989-06-19 | 1989-06-19 | Method of making and using a high resolution lithographic mask |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69021284D1 true DE69021284D1 (de) | 1995-09-07 |
DE69021284T2 DE69021284T2 (de) | 1996-04-18 |
Family
ID=23448734
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69021284T Expired - Fee Related DE69021284T2 (de) | 1989-06-19 | 1990-05-21 | Verfahren zur Herstellung und Verwendung einer Hochauflösungs-Lithographie-Maske. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5049461A (de) |
EP (1) | EP0404742B1 (de) |
JP (1) | JPH0760261B2 (de) |
DE (1) | DE69021284T2 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9213423D0 (en) * | 1992-06-24 | 1992-08-05 | Hitachi Europ Ltd | Nanofabricated structures |
US5631664A (en) * | 1992-09-18 | 1997-05-20 | Olympus Optical Co., Ltd. | Display system utilizing electron emission by polarization reversal of ferroelectric material |
GB2284070B (en) * | 1993-11-16 | 1997-08-27 | Compugraphics International Li | Phase shift masks |
JPH07159974A (ja) * | 1993-12-09 | 1995-06-23 | Ryoden Semiconductor Syst Eng Kk | パターン転写マスクおよびその製造方法 |
US6366340B1 (en) * | 1995-08-18 | 2002-04-02 | Hitachi, Ltd. | Electron exposure apparatus |
US6166386A (en) * | 1997-06-02 | 2000-12-26 | Canon Kabushiki Kaisha | Micro-processing method using a probe |
US6937502B2 (en) * | 2003-07-10 | 2005-08-30 | Hewlett-Packard Development Company, L.P. | Re-recordable data storage medium utilizing conduction barrier |
CN101124089B (zh) * | 2004-01-12 | 2011-02-09 | 加利福尼亚大学董事会 | 纳米级电子光刻 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3235064A1 (de) * | 1982-09-22 | 1984-03-22 | Siemens AG, 1000 Berlin und 8000 München | Tunnelkathodenmaske fuer die elektronenlithografie, verfahren zu ihrer herstellung und verfahren zu ihrem betrieb |
US4802951A (en) * | 1986-03-07 | 1989-02-07 | Trustees Of Boston University | Method for parallel fabrication of nanometer scale multi-device structures |
WO1988004470A1 (en) * | 1986-12-07 | 1988-06-16 | Lasarray Holding Ag | Process and device for generating material structures of atomic dimensions |
US4916688A (en) * | 1988-03-31 | 1990-04-10 | International Business Machines Corporation | Data storage method using state transformable materials |
-
1989
- 1989-06-19 US US07/367,815 patent/US5049461A/en not_active Expired - Fee Related
-
1990
- 1990-05-21 DE DE69021284T patent/DE69021284T2/de not_active Expired - Fee Related
- 1990-05-21 EP EP90850198A patent/EP0404742B1/de not_active Expired - Lifetime
- 1990-06-19 JP JP15885490A patent/JPH0760261B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0404742A2 (de) | 1990-12-27 |
EP0404742A3 (de) | 1991-12-18 |
US5049461A (en) | 1991-09-17 |
JPH0341449A (ja) | 1991-02-21 |
JPH0760261B2 (ja) | 1995-06-28 |
EP0404742B1 (de) | 1995-08-02 |
DE69021284T2 (de) | 1996-04-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |