DE69428821D1 - Verfahren zur Herstellung einer Mikrostruktur und einer Röntgenstrahlmaske - Google Patents

Verfahren zur Herstellung einer Mikrostruktur und einer Röntgenstrahlmaske

Info

Publication number
DE69428821D1
DE69428821D1 DE69428821T DE69428821T DE69428821D1 DE 69428821 D1 DE69428821 D1 DE 69428821D1 DE 69428821 T DE69428821 T DE 69428821T DE 69428821 T DE69428821 T DE 69428821T DE 69428821 D1 DE69428821 D1 DE 69428821D1
Authority
DE
Germany
Prior art keywords
microstructure
producing
ray mask
mask
ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69428821T
Other languages
English (en)
Other versions
DE69428821T2 (de
Inventor
Seiji Ogino
Toshiyuki Numazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
New Energy and Industrial Technology Development Organization
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP6667693A external-priority patent/JP3306974B2/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69428821D1 publication Critical patent/DE69428821D1/de
Application granted granted Critical
Publication of DE69428821T2 publication Critical patent/DE69428821T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69428821T 1993-03-25 1994-03-08 Verfahren zur Herstellung einer Mikrostruktur und einer Röntgenstrahlmaske Expired - Lifetime DE69428821T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6667693A JP3306974B2 (ja) 1992-10-15 1993-03-25 微細構造体の形成方法およびｘ線マスク

Publications (2)

Publication Number Publication Date
DE69428821D1 true DE69428821D1 (de) 2001-12-06
DE69428821T2 DE69428821T2 (de) 2002-04-11

Family

ID=13322770

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69428821T Expired - Lifetime DE69428821T2 (de) 1993-03-25 1994-03-08 Verfahren zur Herstellung einer Mikrostruktur und einer Röntgenstrahlmaske

Country Status (4)

Country Link
US (1) US5527646A (de)
EP (1) EP0617329B1 (de)
CA (1) CA2118753C (de)
DE (1) DE69428821T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331356B1 (en) 1989-05-26 2001-12-18 International Business Machines Corporation Patterns of electrically conducting polymers and their application as electrodes or electrical contacts
IT1290061B1 (it) * 1997-03-13 1998-10-19 Atohaas Holding Cv Lastre antirumore
US6517665B1 (en) * 2000-01-25 2003-02-11 Sandia National Laboratories Liga developer apparatus system
US7608367B1 (en) * 2005-04-22 2009-10-27 Sandia Corporation Vitreous carbon mask substrate for X-ray lithography
TR201908712T4 (tr) 2012-10-19 2019-07-22 Proslide Technology Inc Eğlence amaçlı taşıt ve taşıt kontrol sistemi.
CN106659939B (zh) 2014-04-23 2020-02-18 波乐思来技术股份有限公司 游乐项目流体控制系统
EP3791944A3 (de) 2014-06-13 2021-06-30 Proslide Technology Inc. Wasserbahn
USD846479S1 (en) 2016-07-15 2019-04-23 Proslide Technology Inc. Water ride vehicle
USD870015S1 (en) 2016-07-15 2019-12-17 Proslide Technology Inc. Water ride vehicle intake
USD813337S1 (en) 2016-07-15 2018-03-20 Proslide Technology Inc. Water ride
ES2897010T3 (es) 2016-07-15 2022-02-28 Proslide Technology Inc Elemento de tobogán acuático, vehículo y procedimiento

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE277773C (de) *
JPS5290269A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Forming method for fine resist patterns
DE3338717A1 (de) * 1983-10-25 1985-05-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung einer roentgenmaske mit metalltraegerfolie
DE3577930D1 (de) * 1984-07-23 1990-06-28 Nippon Telegraph & Telephone Bildung von motiven.
DD277773A1 (de) * 1988-12-02 1990-04-11 Akad Wissenschaften Ddr Waessrig-alkalisch entwickelbarer positivresist
US5298367A (en) * 1991-03-09 1994-03-29 Basf Aktiengesellschaft Production of micromoldings having a high aspect ratio

Also Published As

Publication number Publication date
CA2118753C (en) 2000-10-03
US5527646A (en) 1996-06-18
EP0617329A1 (de) 1994-09-28
DE69428821T2 (de) 2002-04-11
CA2118753A1 (en) 1994-09-26
EP0617329B1 (de) 2001-10-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPME, JP

Owner name: SUMITOMO ELECTRIC INDUSTRIES, LTD., OSAKA, JP

8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, SCHUMACHER, KNAUER, VON HIRSCHHAUSEN, 8033