DE69012479D1 - Magnetoresistiver Sensor mit sehr niedrigem Rauschen für die Anwendung bei Medien mit hoher Schreibdichte. - Google Patents

Magnetoresistiver Sensor mit sehr niedrigem Rauschen für die Anwendung bei Medien mit hoher Schreibdichte.

Info

Publication number
DE69012479D1
DE69012479D1 DE69012479T DE69012479T DE69012479D1 DE 69012479 D1 DE69012479 D1 DE 69012479D1 DE 69012479 T DE69012479 T DE 69012479T DE 69012479 T DE69012479 T DE 69012479T DE 69012479 D1 DE69012479 D1 DE 69012479D1
Authority
DE
Germany
Prior art keywords
media
low noise
magnetoresistive sensor
high writing
writing density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69012479T
Other languages
English (en)
Other versions
DE69012479T2 (de
Inventor
Joseph Adam Aboaf
Vincent Noel Kahwaty
James Lamar Nix
Frank Boyd Shelledy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69012479D1 publication Critical patent/DE69012479D1/de
Publication of DE69012479T2 publication Critical patent/DE69012479T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/399—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures with intrinsic biasing, e.g. provided by equipotential strips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
DE69012479T 1989-08-01 1990-05-21 Magnetoresistiver Sensor mit sehr niedrigem Rauschen für die Anwendung bei Medien mit hoher Schreibdichte. Expired - Lifetime DE69012479T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/388,241 US5001586A (en) 1989-08-01 1989-08-01 Very low noise magnetoresistive sensor for high density media applications

Publications (2)

Publication Number Publication Date
DE69012479D1 true DE69012479D1 (de) 1994-10-20
DE69012479T2 DE69012479T2 (de) 1995-03-30

Family

ID=23533269

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69012479T Expired - Lifetime DE69012479T2 (de) 1989-08-01 1990-05-21 Magnetoresistiver Sensor mit sehr niedrigem Rauschen für die Anwendung bei Medien mit hoher Schreibdichte.

Country Status (4)

Country Link
US (1) US5001586A (de)
EP (1) EP0412071B1 (de)
JP (1) JP2785839B2 (de)
DE (1) DE69012479T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3088519B2 (ja) * 1991-10-23 2000-09-18 財団法人生産開発科学研究所 磁気抵抗効果素子
US5378885A (en) * 1991-10-29 1995-01-03 Mars Incorporated Unshielded magnetoresistive head with multiple pairs of sensing elements
US5521005A (en) * 1991-11-25 1996-05-28 Hitachi, Ltd. Magnetoresistive head
US5285339A (en) * 1992-02-28 1994-02-08 International Business Machines Corporation Magnetoresistive read transducer having improved bias profile
JPH0653039A (ja) * 1992-08-03 1994-02-25 Hitachi Ltd 耐食性磁性膜およびこれを用いた磁気ヘッド
US5549978A (en) * 1992-10-30 1996-08-27 Kabushiki Kaisha Toshiba Magnetoresistance effect element
JPH06151171A (ja) * 1992-11-02 1994-05-31 Matsushita Electric Ind Co Ltd 軟磁性薄膜体とその製造方法およびそれを用いた磁気ヘッド
JPH06162450A (ja) * 1992-11-19 1994-06-10 Matsushita Electric Ind Co Ltd 磁気抵抗効果型ヘッド及びその製造方法
US5440233A (en) * 1993-04-30 1995-08-08 International Business Machines Corporation Atomic layered materials and temperature control for giant magnetoresistive sensor
JPH06318516A (ja) * 1993-05-06 1994-11-15 Mitsubishi Electric Corp 軟磁性多層膜およびこれを用いた磁気ヘッド
JP2688173B2 (ja) * 1993-05-18 1997-12-08 インターナショナル・ビジネス・マシーンズ・コーポレイション 磁気抵抗読取りトランスジューサ
KR0131548B1 (ko) * 1993-07-19 1998-04-18 윌리암 티. 엘리스 경사진 하드바이어스 자기저항성헤드를 갖는 자기저장시스템
JPH07166282A (ja) * 1993-09-02 1995-06-27 Read Rite Corp 磁気ひずみが０の磁性材料
US5664316A (en) * 1995-01-17 1997-09-09 International Business Machines Corporation Method of manufacturing magnetoresistive read transducer having a contiguous longitudinal bias layer
US6249406B1 (en) 1996-09-23 2001-06-19 International Business Machines Corporation Magnetoresistive sensor with a soft adjacent layer having high magnetization, high resistivity, low intrinsic anisotropy and near zero magnetostriction
US5949623A (en) * 1997-09-11 1999-09-07 International Business Machines Corporation Monolayer longitudinal bias and sensor trackwidth definition for overlaid anisotropic and giant magnetoresistive heads
JP2008221983A (ja) * 2007-03-12 2008-09-25 Lecip Corp 車両用照明器具
JP4737309B2 (ja) * 2009-02-26 2011-07-27 株式会社デンソー 放電灯ユニット

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2165206A5 (de) * 1971-12-22 1973-08-03 Cii
US3967368A (en) * 1972-10-11 1976-07-06 International Business Machines Corporation Method for manufacturing and using an internally biased magnetoresistive magnetic transducer
DE3229774A1 (de) * 1981-08-10 1983-03-24 Matsushita Electric Industrial Co., Ltd., Kadoma, Osaka Magnetoresistives element
US4639806A (en) * 1983-09-09 1987-01-27 Sharp Kabushiki Kaisha Thin film magnetic head having a magnetized ferromagnetic film on the MR element
JPS61199684A (ja) * 1985-03-01 1986-09-04 Hitachi Ltd 磁気抵抗効果型素子
US4713708A (en) * 1986-10-31 1987-12-15 International Business Machines Magnetoresistive read transducer
US4771349A (en) 1986-10-31 1988-09-13 International Business Machine Corporation Magnetoresistive read transducer
US4782413A (en) * 1987-04-28 1988-11-01 International Business Machines Corporation Magnetoresistive sensor with mixed phase antiferromagnetic film
JPH0760498B2 (ja) * 1987-09-17 1995-06-28 日本電気株式会社 磁気抵抗効果型ヘッド
US4914538A (en) * 1988-08-18 1990-04-03 International Business Machines Corporation Magnetoresistive read transducer

Also Published As

Publication number Publication date
US5001586A (en) 1991-03-19
JP2785839B2 (ja) 1998-08-13
DE69012479T2 (de) 1995-03-30
EP0412071A3 (en) 1991-03-13
JPH03116510A (ja) 1991-05-17
EP0412071A2 (de) 1991-02-06
EP0412071B1 (de) 1994-09-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: DUSCHER, R., DIPL.-PHYS. DR.RER.NAT., PAT.-ANW., 7