DE69011794D1 - Elektrodenscheibe für Plasma-Ätzvorrichtung. - Google Patents

Elektrodenscheibe für Plasma-Ätzvorrichtung.

Info

Publication number
DE69011794D1
DE69011794D1 DE69011794T DE69011794T DE69011794D1 DE 69011794 D1 DE69011794 D1 DE 69011794D1 DE 69011794 T DE69011794 T DE 69011794T DE 69011794 T DE69011794 T DE 69011794T DE 69011794 D1 DE69011794 D1 DE 69011794D1
Authority
DE
Germany
Prior art keywords
plasma etching
etching device
electrode disc
disc
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69011794T
Other languages
English (en)
Other versions
DE69011794T2 (de
Inventor
Hajime Itoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai Carbon Co Ltd
Original Assignee
Tokai Carbon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Carbon Co Ltd filed Critical Tokai Carbon Co Ltd
Application granted granted Critical
Publication of DE69011794D1 publication Critical patent/DE69011794D1/de
Publication of DE69011794T2 publication Critical patent/DE69011794T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Ceramic Products (AREA)
  • Drying Of Semiconductors (AREA)
DE69011794T 1989-10-02 1990-09-28 Elektrodenscheibe für Plasma-Ätzvorrichtung. Expired - Fee Related DE69011794T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1258057A JPH07114198B2 (ja) 1989-10-02 1989-10-02 プラズマエッチング用電極板

Publications (2)

Publication Number Publication Date
DE69011794D1 true DE69011794D1 (de) 1994-09-29
DE69011794T2 DE69011794T2 (de) 1994-12-15

Family

ID=17314938

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69011794T Expired - Fee Related DE69011794T2 (de) 1989-10-02 1990-09-28 Elektrodenscheibe für Plasma-Ätzvorrichtung.

Country Status (4)

Country Link
EP (1) EP0421686B1 (de)
JP (1) JPH07114198B2 (de)
KR (1) KR940010507B1 (de)
DE (1) DE69011794T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0573915A1 (de) * 1992-06-12 1993-12-15 Nisshinbo Industries, Inc. Elektrodenplatte und Schablone zur Verwendung in Plasma-Ätzverfahren
JP3249257B2 (ja) * 1993-08-11 2002-01-21 ユニチカ株式会社 アモルファスカーボン成形体及びその製造法
JP3437026B2 (ja) * 1996-02-15 2003-08-18 東海カーボン株式会社 プラズマエッチング用電極板およびその製造方法
TW449820B (en) * 1996-02-15 2001-08-11 Tokai Carbon Kk Plasma-etching electrode plate
JPH09289196A (ja) * 1996-04-22 1997-11-04 Nisshinbo Ind Inc プラズマエッチング電極
JP3454333B2 (ja) * 1996-04-22 2003-10-06 日清紡績株式会社 プラズマエッチング電極
JP2003007682A (ja) * 2001-06-25 2003-01-10 Matsushita Electric Ind Co Ltd プラズマ処理装置用の電極部材

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4367114A (en) * 1981-05-06 1983-01-04 The Perkin-Elmer Corporation High speed plasma etching system
JPS62252942A (ja) * 1986-04-17 1987-11-04 Tokai Carbon Co Ltd プラズマエツチング用電極板
JPS6336047U (de) * 1986-08-26 1988-03-08

Also Published As

Publication number Publication date
EP0421686A3 (en) 1991-09-18
EP0421686B1 (de) 1994-08-24
JPH03119723A (ja) 1991-05-22
DE69011794T2 (de) 1994-12-15
KR940010507B1 (ko) 1994-10-24
JPH07114198B2 (ja) 1995-12-06
KR910008805A (ko) 1991-05-31
EP0421686A2 (de) 1991-04-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee