DE68909262T2 - Vorrichtung für RF-Plasma-Verarbeitung. - Google Patents

Vorrichtung für RF-Plasma-Verarbeitung.

Info

Publication number
DE68909262T2
DE68909262T2 DE89850011T DE68909262T DE68909262T2 DE 68909262 T2 DE68909262 T2 DE 68909262T2 DE 89850011 T DE89850011 T DE 89850011T DE 68909262 T DE68909262 T DE 68909262T DE 68909262 T2 DE68909262 T2 DE 68909262T2
Authority
DE
Germany
Prior art keywords
plasma processing
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89850011T
Other languages
English (en)
Other versions
DE68909262D1 (de
Inventor
Howard Allan Hendrix
Howard William Schmidt
Ernest Spencer Ward
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE68909262D1 publication Critical patent/DE68909262D1/de
Publication of DE68909262T2 publication Critical patent/DE68909262T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
DE89850011T 1988-01-29 1989-01-16 Vorrichtung für RF-Plasma-Verarbeitung. Expired - Fee Related DE68909262T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/150,361 US4802968A (en) 1988-01-29 1988-01-29 RF plasma processing apparatus

Publications (2)

Publication Number Publication Date
DE68909262D1 DE68909262D1 (de) 1993-10-28
DE68909262T2 true DE68909262T2 (de) 1994-04-21

Family

ID=22534171

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89850011T Expired - Fee Related DE68909262T2 (de) 1988-01-29 1989-01-16 Vorrichtung für RF-Plasma-Verarbeitung.

Country Status (4)

Country Link
US (1) US4802968A (de)
EP (1) EP0326531B1 (de)
JP (1) JPH0699805B2 (de)
DE (1) DE68909262T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2682045B1 (fr) * 1991-10-02 1993-12-10 Elf Aquitaine Prod Ste Nale Recuperation des solvants polaires aprotiques a partir de leurs solutions aqueuses salines.
US5891350A (en) 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
US5716505A (en) * 1996-02-23 1998-02-10 Balzers Prozess-Systems Gmbh Apparatus for coating substrates by cathode sputtering with a hollow target
EP0954620A4 (de) 1997-01-16 2002-01-02 Bottomfield Layne F Dampfphasenabscheidungskomponente und entsprechende verfahren
DE10045544C2 (de) * 2000-09-07 2002-09-12 Siemens Ag Verfahren zum Aufbringen einer Beschichtung auf eine Lampe
JP4557400B2 (ja) * 2000-09-14 2010-10-06 キヤノン株式会社 堆積膜形成方法
US7166199B2 (en) * 2002-12-18 2007-01-23 Cardinal Cg Company Magnetron sputtering systems including anodic gas distribution systems
US7097744B2 (en) * 2003-06-12 2006-08-29 Applied Materials, Inc. Method and apparatus for controlling darkspace gap in a chamber
US7850828B2 (en) * 2006-09-15 2010-12-14 Cardinal Cg Company Enhanced virtual anode
US20090194414A1 (en) * 2008-01-31 2009-08-06 Nolander Ira G Modified sputtering target and deposition components, methods of production and uses thereof
US9812296B2 (en) 2015-02-03 2017-11-07 Cardinal Cg Company Sputtering apparatus including gas distribution system
CN115074680B (zh) * 2021-03-12 2023-08-08 江苏菲沃泰纳米科技股份有限公司 溅射镀膜装置和设备及其溅射镀膜组件

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3369991A (en) * 1965-01-28 1968-02-20 Ibm Apparatus for cathode sputtering including a shielded rf electrode
US3617459A (en) * 1967-09-15 1971-11-02 Ibm Rf sputtering method and apparatus for producing insulating films of varied physical properties
US3714019A (en) * 1971-02-04 1973-01-30 Ion Equipment Corp Cathode sputtering electrode assembly
US3749662A (en) * 1972-04-17 1973-07-31 Materials Research Corp Heated substrate support station for sputtering systems
DE2705611A1 (de) * 1977-02-10 1978-08-17 Siemens Ag Verfahren zum bedecken einer auf einem substrat befindlichen ersten schicht oder schichtenfolge mit einer weiteren zweiten schicht durch aufsputtern
US4131533A (en) * 1977-12-30 1978-12-26 International Business Machines Corporation RF sputtering apparatus having floating anode shield
US4170541A (en) * 1978-08-14 1979-10-09 Varian Associates, Inc. Rotating resonator for large substrate tables in sputtering systems
JPS5535465A (en) * 1978-09-05 1980-03-12 Hitachi Cable Method of coloring insulated wire
US4272355A (en) * 1980-02-26 1981-06-09 International Business Machines Corporation Process of bonding sputtering targets to target electrodes
JPS57149734A (en) * 1981-03-12 1982-09-16 Anelva Corp Plasma applying working device
US4362611A (en) * 1981-07-27 1982-12-07 International Business Machines Corporation Quadrupole R.F. sputtering system having an anode/cathode shield and a floating target shield
JPS58141433A (ja) * 1982-02-16 1983-08-22 Teijin Ltd 磁気記録媒体とその製造方法
US4422897A (en) * 1982-05-25 1983-12-27 Massachusetts Institute Of Technology Process for selectively etching silicon
JPS59172764U (ja) * 1983-05-02 1984-11-19 日電アネルバ株式会社 高周波グロ−放電装置
JPS59217324A (ja) * 1983-05-26 1984-12-07 Hitachi Ltd スパツタ薄膜形成装置
US4661233A (en) * 1985-07-05 1987-04-28 Westinghouse Electric Corp. Cathode/ground shield arrangement in a sputter coating apparatus
JPS6260866A (ja) * 1985-08-02 1987-03-17 Fujitsu Ltd マグネトロンスパツタ装置
US4647361A (en) * 1985-09-03 1987-03-03 International Business Machines Corporation Sputtering apparatus

Also Published As

Publication number Publication date
US4802968A (en) 1989-02-07
EP0326531B1 (de) 1993-09-22
EP0326531A2 (de) 1989-08-02
JPH01198472A (ja) 1989-08-10
EP0326531A3 (en) 1990-08-22
DE68909262D1 (de) 1993-10-28
JPH0699805B2 (ja) 1994-12-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee