DE69009429T2 - Kühlkörper mit verbesserter Lebensdauer und thermischer Leitfähigkeit. - Google Patents

Kühlkörper mit verbesserter Lebensdauer und thermischer Leitfähigkeit.

Info

Publication number
DE69009429T2
DE69009429T2 DE69009429T DE69009429T DE69009429T2 DE 69009429 T2 DE69009429 T2 DE 69009429T2 DE 69009429 T DE69009429 T DE 69009429T DE 69009429 T DE69009429 T DE 69009429T DE 69009429 T2 DE69009429 T2 DE 69009429T2
Authority
DE
Germany
Prior art keywords
heatsink
service life
thermal conductivity
improved service
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69009429T
Other languages
English (en)
Other versions
DE69009429D1 (de
Inventor
Mitsuo Osada
Yugaku Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69009429D1 publication Critical patent/DE69009429D1/de
Publication of DE69009429T2 publication Critical patent/DE69009429T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
DE69009429T 1989-12-29 1990-12-19 Kühlkörper mit verbesserter Lebensdauer und thermischer Leitfähigkeit. Expired - Fee Related DE69009429T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33998189 1989-12-29

Publications (2)

Publication Number Publication Date
DE69009429D1 DE69009429D1 (de) 1994-07-07
DE69009429T2 true DE69009429T2 (de) 1994-09-15

Family

ID=18332602

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69009429T Expired - Fee Related DE69009429T2 (de) 1989-12-29 1990-12-19 Kühlkörper mit verbesserter Lebensdauer und thermischer Leitfähigkeit.

Country Status (3)

Country Link
US (1) US5448107A (de)
EP (1) EP0435155B1 (de)
DE (1) DE69009429T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5293930A (en) * 1992-09-24 1994-03-15 Hewlett-Packard Company Surface-to-air heat exchanger for electronic devices
US5461766A (en) * 1994-01-26 1995-10-31 Sun Microsystems, Inc. Method for integrally packaging an integrated circuit with a heat transfer apparatus
US5441102A (en) * 1994-01-26 1995-08-15 Sun Microsystems, Inc. Heat exchanger for electronic equipment
US5637921A (en) * 1995-04-21 1997-06-10 Sun Microsystems, Inc. Sub-ambient temperature electronic package
US5798566A (en) * 1996-01-11 1998-08-25 Ngk Spark Plug Co., Ltd. Ceramic IC package base and ceramic cover
JP3517831B2 (ja) * 1999-07-13 2004-04-12 宏巳 片岡 ヒートシンク並びにその製造方法
US6706329B1 (en) * 2002-11-21 2004-03-16 Ming-Ho Chien Local nickel plating for aluminum alloy radiator
WO2004093187A1 (ja) * 2003-04-16 2004-10-28 Fujitsu Limited 電子部品パッケージ、電子部品パッケージ組立体およびプリント基板ユニット
US7443683B2 (en) * 2004-11-19 2008-10-28 Hewlett-Packard Development Company, L.P. Cooling apparatus for electronic devices
US7563625B2 (en) * 2005-01-11 2009-07-21 SemiLEDs Optoelectronics Co., Ltd. Method of making light-emitting diodes (LEDs) with improved light extraction by roughening
US7186580B2 (en) * 2005-01-11 2007-03-06 Semileds Corporation Light emitting diodes (LEDs) with improved light extraction by roughening
US9130114B2 (en) 2005-01-11 2015-09-08 SemiLEDs Optoelectronics Co., Ltd. Vertical light emitting diode (VLED) dice having confinement layers with roughened surfaces and methods of fabrication
US7524686B2 (en) * 2005-01-11 2009-04-28 Semileds Corporation Method of making light emitting diodes (LEDs) with improved light extraction by roughening
US7378288B2 (en) * 2005-01-11 2008-05-27 Semileds Corporation Systems and methods for producing light emitting diode array
US7897420B2 (en) * 2005-01-11 2011-03-01 SemiLEDs Optoelectronics Co., Ltd. Light emitting diodes (LEDs) with improved light extraction by roughening
US20060154393A1 (en) * 2005-01-11 2006-07-13 Doan Trung T Systems and methods for removing operating heat from a light emitting diode
US7473936B2 (en) * 2005-01-11 2009-01-06 Semileds Corporation Light emitting diodes (LEDs) with improved light extraction by roughening
JP4445524B2 (ja) * 2007-06-26 2010-04-07 株式会社東芝 半導体記憶装置の製造方法
WO2010105221A1 (en) * 2009-03-12 2010-09-16 The Board Of Regents For Oklahoma State University Mixing nozzle for plural component materials
DE102010042087A1 (de) * 2010-10-06 2012-04-12 Jenoptik Laser Gmbh Lasermodul mit einer Laserdiodeneinheit und einem Kühler

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5228547B2 (de) * 1972-07-10 1977-07-27
US4227036A (en) * 1978-09-18 1980-10-07 Microwave Semiconductor Corp. Composite flanged ceramic package for electronic devices
FR2455785A1 (fr) * 1979-05-02 1980-11-28 Thomson Csf Support isolateur electrique, a faible resistance thermique, et embase ou boitier pour composant de puissance, comportant un tel support
JPS55158654A (en) * 1979-05-30 1980-12-10 Aichi Steel Works Ltd Manufacture of heat sink in aluminum
JPS56122149A (en) * 1980-02-29 1981-09-25 Fujitsu Ltd Heat dissipating structure for semiconductor device
JPS5870561A (ja) * 1981-10-23 1983-04-27 Hitachi Ltd 半導体素子用アルミニウム製冷却片
JPS58147050A (ja) * 1982-02-26 1983-09-01 Hitachi Ltd 半導体素子用アルミニウム製冷却片
US4546409A (en) * 1982-04-02 1985-10-08 Mitsubishi Denki Kabushiki Kaisha Device for cooling semiconductor elements
US4620215A (en) * 1982-04-16 1986-10-28 Amdahl Corporation Integrated circuit packaging systems with double surface heat dissipation
DE3477101D1 (en) * 1983-03-25 1989-04-13 Mitsubishi Electric Corp Heat radiator assembly for cooling electronic parts
DE3315583A1 (de) * 1983-04-29 1984-10-31 Siemens AG, 1000 Berlin und 8000 München Ein elektrisches bauteil tragendes, gut kuehlbares schaltungsmodul
JPS60115247A (ja) * 1983-11-28 1985-06-21 Fujitsu Ltd 半導体装置
AU582139B2 (en) * 1984-03-06 1989-03-16 Furukawa Aluminum Co., Ltd. Aluminum and aluminum alloy for fin and heat exchanger using same
JPS62279089A (ja) * 1986-05-29 1987-12-03 Nippon Kokan Kk <Nkk> 球状黒鉛鋳鉄の溶接方法
US4700273A (en) * 1986-06-03 1987-10-13 Kaufman Lance R Circuit assembly with semiconductor expansion matched thermal path
US4788627A (en) * 1986-06-06 1988-11-29 Tektronix, Inc. Heat sink device using composite metal alloy
JPS6334495A (ja) * 1986-07-29 1988-02-15 Nippon Denso Co Ltd アルミニウム熱交換器
US4757934A (en) * 1987-02-06 1988-07-19 Motorola, Inc. Low stress heat sinking for semiconductors
JPH0231863A (ja) * 1987-11-18 1990-02-01 Nordson Kk コーティング剤の塗布並びにその熟成方法

Also Published As

Publication number Publication date
US5448107A (en) 1995-09-05
EP0435155B1 (de) 1994-06-01
EP0435155A1 (de) 1991-07-03
DE69009429D1 (de) 1994-07-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN

8339 Ceased/non-payment of the annual fee