DE69000824D1 - Lichtemittierende oder lichtempfangende vorrichtung und ihr herstellungsverfahren. - Google Patents

Lichtemittierende oder lichtempfangende vorrichtung und ihr herstellungsverfahren.

Info

Publication number
DE69000824D1
DE69000824D1 DE9090310563T DE69000824T DE69000824D1 DE 69000824 D1 DE69000824 D1 DE 69000824D1 DE 9090310563 T DE9090310563 T DE 9090310563T DE 69000824 T DE69000824 T DE 69000824T DE 69000824 D1 DE69000824 D1 DE 69000824D1
Authority
DE
Germany
Prior art keywords
light
emitting
receiving device
production method
encapsulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE9090310563T
Other languages
English (en)
Other versions
DE69000824T2 (de
Inventor
C O Mitsui Petrochemica Kauchi
Toru Tomoshige
C O Idec Izumi Corporati Usuda
C O Idec Izumi Corpor Kitayama
C O Idec Izumi Corporat Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Petrochemical Industries Ltd
Original Assignee
Mitsui Petrochemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Petrochemical Industries Ltd filed Critical Mitsui Petrochemical Industries Ltd
Application granted granted Critical
Publication of DE69000824D1 publication Critical patent/DE69000824D1/de
Publication of DE69000824T2 publication Critical patent/DE69000824T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Multi-Process Working Machines And Systems (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Light Receiving Elements (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
DE9090310563T 1989-09-29 1990-09-27 Lichtemittierende oder lichtempfangende vorrichtung und ihr herstellungsverfahren. Expired - Fee Related DE69000824T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1254538A JPH03116857A (ja) 1989-09-29 1989-09-29 発光または受光装置

Publications (2)

Publication Number Publication Date
DE69000824D1 true DE69000824D1 (de) 1993-03-11
DE69000824T2 DE69000824T2 (de) 1993-05-19

Family

ID=17266437

Family Applications (1)

Application Number Title Priority Date Filing Date
DE9090310563T Expired - Fee Related DE69000824T2 (de) 1989-09-29 1990-09-27 Lichtemittierende oder lichtempfangende vorrichtung und ihr herstellungsverfahren.

Country Status (9)

Country Link
US (1) US5126826A (de)
EP (1) EP0420629B1 (de)
JP (1) JPH03116857A (de)
KR (1) KR910007166A (de)
CN (1) CN1052221A (de)
AT (1) ATE85160T1 (de)
CA (1) CA2026375A1 (de)
DE (1) DE69000824T2 (de)
DK (1) DK0420629T3 (de)

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JPH05198786A (ja) * 1992-01-22 1993-08-06 Sharp Corp クリアモールドｃｃｄ固体撮像素子
US5514627A (en) * 1994-01-24 1996-05-07 Hewlett-Packard Company Method and apparatus for improving the performance of light emitting diodes
KR100537349B1 (ko) 1996-06-26 2006-02-28 오스람 게젤샤프트 미트 베쉬랭크터 하프퉁 발광 변환 소자를 포함하는 발광 반도체 소자
JP3173586B2 (ja) * 1998-03-26 2001-06-04 日本電気株式会社 全モールド型固体撮像装置およびその製造方法
US6303986B1 (en) 1998-07-29 2001-10-16 Silicon Light Machines Method of and apparatus for sealing an hermetic lid to a semiconductor die
US6204523B1 (en) * 1998-11-06 2001-03-20 Lumileds Lighting, U.S., Llc High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range
JP4638098B2 (ja) * 1999-06-14 2011-02-23 キャンサー・リサーチ・テクノロジー・リミテッド 癌治療
US6387723B1 (en) 2001-01-19 2002-05-14 Silicon Light Machines Reduced surface charging in silicon-based devices
JP4275889B2 (ja) * 2001-02-09 2009-06-10 株式会社カネカ 発光ダイオード及びその製造方法
JP4275890B2 (ja) * 2001-02-13 2009-06-10 株式会社カネカ 発光ダイオード及びその製造方法
JP2002252375A (ja) * 2001-02-23 2002-09-06 Kanegafuchi Chem Ind Co Ltd 発光ダイオード及びその製造方法
JP4101468B2 (ja) 2001-04-09 2008-06-18 豊田合成株式会社 発光装置の製造方法
US6782205B2 (en) 2001-06-25 2004-08-24 Silicon Light Machines Method and apparatus for dynamic equalization in wavelength division multiplexing
US6747781B2 (en) 2001-06-25 2004-06-08 Silicon Light Machines, Inc. Method, apparatus, and diffuser for reducing laser speckle
US6646778B2 (en) 2001-08-01 2003-11-11 Silicon Light Machines Grating light valve with encapsulated dampening gas
US6829092B2 (en) 2001-08-15 2004-12-07 Silicon Light Machines, Inc. Blazed grating light valve
US6800238B1 (en) 2002-01-15 2004-10-05 Silicon Light Machines, Inc. Method for domain patterning in low coercive field ferroelectrics
US6728023B1 (en) 2002-05-28 2004-04-27 Silicon Light Machines Optical device arrays with optimized image resolution
US6767751B2 (en) 2002-05-28 2004-07-27 Silicon Light Machines, Inc. Integrated driver process flow
US6822797B1 (en) 2002-05-31 2004-11-23 Silicon Light Machines, Inc. Light modulator structure for producing high-contrast operation using zero-order light
US6829258B1 (en) 2002-06-26 2004-12-07 Silicon Light Machines, Inc. Rapidly tunable external cavity laser
US6813059B2 (en) 2002-06-28 2004-11-02 Silicon Light Machines, Inc. Reduced formation of asperities in contact micro-structures
US6801354B1 (en) 2002-08-20 2004-10-05 Silicon Light Machines, Inc. 2-D diffraction grating for substantially eliminating polarization dependent losses
US6712480B1 (en) 2002-09-27 2004-03-30 Silicon Light Machines Controlled curvature of stressed micro-structures
JP4360595B2 (ja) * 2002-10-18 2009-11-11 ペルノックス株式会社 光電変換装置
JP2004186168A (ja) * 2002-11-29 2004-07-02 Shin Etsu Chem Co Ltd 発光ダイオード素子用シリコーン樹脂組成物
US6829077B1 (en) 2003-02-28 2004-12-07 Silicon Light Machines, Inc. Diffractive light modulator with dynamically rotatable diffraction plane
US6806997B1 (en) 2003-02-28 2004-10-19 Silicon Light Machines, Inc. Patterned diffractive light modulator ribbon for PDL reduction
JP2006049533A (ja) * 2004-08-04 2006-02-16 Wacker Asahikasei Silicone Co Ltd 樹脂封止発光ダイオード装置及び封止方法
CN101308836B (zh) * 2007-05-18 2011-11-02 富士迈半导体精密工业（上海）有限公司 发光二极管、发光二极管组件及发光二极管灯串
JP4807522B2 (ja) * 2007-09-18 2011-11-02 株式会社朝日ラバー 半導体光学素子部品のはんだ付け方法及び半導体光学素子部品
TWI370216B (en) * 2009-06-29 2012-08-11 Lextar Electronics Corp Led lighting device
US9349927B2 (en) * 2011-10-18 2016-05-24 Nitto Denko Corporation Encapsulating sheet and optical semiconductor element device
US9153755B2 (en) * 2011-10-18 2015-10-06 Nitto Denko Corporation Silicone resin sheet, cured sheet, and light emitting diode device and producing method thereof
EP2682738B1 (de) * 2012-07-05 2020-12-23 Atlas Material Testing Technology GmbH Detektion der Emissionsstrahlung einer UV-Lichtemissionsdiode durch eine baugleiche UV-Lichtempfangsdiode
DE102012108413A1 (de) * 2012-09-10 2014-03-13 Osram Opto Semiconductors Gmbh Gehäuse für ein optoelektronisches Bauteil, Optoelektronisches Bauelement und Verfahren zur Herstellung des optoelektronischen Bauelements

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Publication number Priority date Publication date Assignee Title
US4032963A (en) * 1974-09-03 1977-06-28 Motorola, Inc. Package and method for a semiconductor radiant energy emitting device
GB1585477A (en) * 1976-01-26 1981-03-04 Gen Electric Semiconductors
US4278784A (en) * 1980-02-06 1981-07-14 Western Electric Company, Inc. Encapsulated electronic devices and encapsulating compositions
IT1130285B (it) * 1980-03-05 1986-06-11 Anic Spa Procedimento per la sintesi di allil carbonati di alcoli poliidrici e loro derivati
US4480009A (en) * 1980-12-15 1984-10-30 M&T Chemicals Inc. Siloxane-containing polymers
DE3278567D1 (en) * 1981-10-03 1988-07-07 Japan Synthetic Rubber Co Ltd Solvent-soluble organopolysilsesquioxanes, processes for producing the same, and compositions and semiconductor devices using the same
JPS5987840A (ja) * 1982-11-10 1984-05-21 Toray Silicone Co Ltd 半導体装置
FR2549291B2 (fr) * 1982-10-29 1986-05-09 Radiotechnique Compelec Procede d'encapsulation de composants electroniques par extrusion de matiere plastique et applications a la fabrication de voyants lumineux et a l'encapsulation de circuits electroniques
IT1160172B (it) * 1983-01-13 1987-03-04 Anic Spa Composizione liquida polimerizzabile, atta a produrre polimeri con elevate caratteristiche ottiche e meccaniche e polimeri e manufatti ottenuti da detta composizione
US4777520A (en) * 1986-03-27 1988-10-11 Oki Electric Industry Co. Ltd. Heat-resistant plastic semiconductor device
US5101264A (en) * 1988-03-31 1992-03-31 Mitsui Petrochemical Ind. Light-emitting or receiving device with smooth and hard encapsulant resin

Also Published As

Publication number Publication date
CN1052221A (zh) 1991-06-12
DE69000824T2 (de) 1993-05-19
US5126826A (en) 1992-06-30
ATE85160T1 (de) 1993-02-15
DK0420629T3 (da) 1993-03-01
KR910007166A (ko) 1991-04-30
CA2026375A1 (en) 1991-03-30
EP0420629A1 (de) 1991-04-03
JPH03116857A (ja) 1991-05-17
EP0420629B1 (de) 1993-01-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee