DE68928296T2 - Halbleiter mit einer Matrixstruktur aus gekoppelten Quanten-Schachteln - Google Patents

Halbleiter mit einer Matrixstruktur aus gekoppelten Quanten-Schachteln

Info

Publication number
DE68928296T2
DE68928296T2 DE68928296T DE68928296T DE68928296T2 DE 68928296 T2 DE68928296 T2 DE 68928296T2 DE 68928296 T DE68928296 T DE 68928296T DE 68928296 T DE68928296 T DE 68928296T DE 68928296 T2 DE68928296 T2 DE 68928296T2
Authority
DE
Germany
Prior art keywords
semiconductors
structure made
matrix structure
coupled quantum
quantum boxes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68928296T
Other languages
English (en)
Other versions
DE68928296D1 (de
Inventor
Hiroyuki Sakaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan filed Critical Research Development Corp of Japan
Application granted granted Critical
Publication of DE68928296D1 publication Critical patent/DE68928296D1/de
Publication of DE68928296T2 publication Critical patent/DE68928296T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/158—Structures without potential periodicity in a direction perpendicular to a major surface of the substrate, i.e. vertical direction, e.g. lateral superlattices, lateral surface superlattices [LSS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
DE68928296T 1988-11-19 1989-11-17 Halbleiter mit einer Matrixstruktur aus gekoppelten Quanten-Schachteln Expired - Fee Related DE68928296T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63293336A JPH0779158B2 (ja) 1988-11-19 1988-11-19 結合量子箱列構造半導体

Publications (2)

Publication Number Publication Date
DE68928296D1 DE68928296D1 (de) 1997-10-09
DE68928296T2 true DE68928296T2 (de) 1998-02-26

Family

ID=17793495

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68928296T Expired - Fee Related DE68928296T2 (de) 1988-11-19 1989-11-17 Halbleiter mit einer Matrixstruktur aus gekoppelten Quanten-Schachteln

Country Status (4)

Country Link
US (1) US5070375A (de)
EP (1) EP0370403B1 (de)
JP (1) JPH0779158B2 (de)
DE (1) DE68928296T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5633512A (en) * 1990-05-23 1997-05-27 Canon Kabushiki Kaisha Semiconductor device for varying the mobility of electrons by light irradiation
US5289018A (en) * 1990-08-14 1994-02-22 Canon Kabushiki Kaisha Light emitting device utilizing cavity quantum electrodynamics
FR2666175B1 (fr) * 1990-08-21 1992-10-16 Thomson Csf Transistor a effet de champ a supraconducteur.
JP3114246B2 (ja) * 1991-06-07 2000-12-04 ソニー株式会社 量子効果デバイス
JP3125332B2 (ja) * 1991-06-21 2001-01-15 ソニー株式会社 量子ドットトンネル素子とそれを用いた情報処理装置及び情報処理方法
US5283445A (en) * 1991-11-29 1994-02-01 Fujitsu Limited Quantum semiconductor device employing quantum boxes for enabling compact size and high-speed operation
FR2684807B1 (fr) * 1991-12-10 2004-06-11 Thomson Csf Transistor a puits quantique a effet tunnel resonnant.
US5436468A (en) * 1992-03-17 1995-07-25 Fujitsu Limited Ordered mixed crystal semiconductor superlattice device
US5289014A (en) * 1992-08-17 1994-02-22 Motorola, Inc. Semiconductor device having a vertical quantum well via and method for making
US5293050A (en) * 1993-03-25 1994-03-08 International Business Machines Corporation Semiconductor quantum dot light emitting/detecting devices
FR2814854B1 (fr) * 2000-10-02 2003-07-25 Commissariat Energie Atomique Procede de fabrication d'ilots juxtaposes par depot autoorganise sur un substrat et structure ainsi obtenue
KR100580623B1 (ko) * 2003-08-04 2006-05-16 삼성전자주식회사 초격자 구조의 반도체층을 갖는 반도체 소자 및 그 제조방법
US20110004114A1 (en) * 2009-07-06 2011-01-06 Farida Hanna Schenck (Campbell), Cognitive information encoding conversion telecommunication system and conferencing method
US8723205B2 (en) 2011-08-30 2014-05-13 Abl Ip Holding Llc Phosphor incorporated in a thermal conductivity and phase transition heat transfer mechanism
US8759843B2 (en) 2011-08-30 2014-06-24 Abl Ip Holding Llc Optical/electrical transducer using semiconductor nanowire wicking structure in a thermal conductivity and phase transition heat transfer mechanism
US8710526B2 (en) 2011-08-30 2014-04-29 Abl Ip Holding Llc Thermal conductivity and phase transition heat transfer mechanism including optical element to be cooled by heat transfer of the mechanism
EP3534420A1 (de) * 2018-03-02 2019-09-04 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Nichtreziproke filter für materienwellen

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4503447A (en) * 1982-07-16 1985-03-05 The United States Of America As Represented By The Secretary Of The Army Multi-dimensional quantum well device
US4969018A (en) * 1984-07-02 1990-11-06 Texas Instruments Incorp. Quantum-well logic using self-generated potentials
EP0170044B1 (de) * 1984-07-02 1989-11-02 Texas Instruments Incorporated Quantengekoppelte Bauelemente
US4591889A (en) * 1984-09-14 1986-05-27 At&T Bell Laboratories Superlattice geometry and devices
US4751194A (en) * 1986-06-27 1988-06-14 American Telephone And Telegraph Company, At&T Bell Laboratories Structures including quantum well wires and boxes
JPS63232374A (ja) * 1987-03-20 1988-09-28 Fujitsu Ltd 半導体装置
JPH01241866A (ja) * 1988-03-23 1989-09-26 Nec Corp フォノン局在効果を利用した高移動度バイポーラトランジスタ

Also Published As

Publication number Publication date
US5070375A (en) 1991-12-03
JPH0779158B2 (ja) 1995-08-23
DE68928296D1 (de) 1997-10-09
EP0370403A2 (de) 1990-05-30
JPH02139969A (ja) 1990-05-29
EP0370403A3 (de) 1990-08-22
EP0370403B1 (de) 1997-09-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee