DE69418986D1 - Abstimmen des Bandabstands einer halbleitenden Quantumwell-Struktur - Google Patents
Abstimmen des Bandabstands einer halbleitenden Quantumwell-StrukturInfo
- Publication number
- DE69418986D1 DE69418986D1 DE69418986T DE69418986T DE69418986D1 DE 69418986 D1 DE69418986 D1 DE 69418986D1 DE 69418986 T DE69418986 T DE 69418986T DE 69418986 T DE69418986 T DE 69418986T DE 69418986 D1 DE69418986 D1 DE 69418986D1
- Authority
- DE
- Germany
- Prior art keywords
- bandgap
- tuning
- quantum well
- well structure
- semiconducting quantum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
- G02B6/1347—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion implantation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/182—Intermixing or interdiffusion or disordering of III-V heterostructures, e.g. IILD
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12169—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
- H01S5/3414—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Recrystallisation Techniques (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/172,094 US5395793A (en) | 1993-12-23 | 1993-12-23 | Method of bandgap tuning of semiconductor quantum well structures |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69418986D1 true DE69418986D1 (de) | 1999-07-15 |
DE69418986T2 DE69418986T2 (de) | 1999-09-30 |
Family
ID=22626336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69418986T Expired - Fee Related DE69418986T2 (de) | 1993-12-23 | 1994-12-20 | Abstimmen des Bandabstands einer halbleitenden Quantumwell-Struktur |
Country Status (4)
Country | Link |
---|---|
US (1) | US5395793A (de) |
EP (1) | EP0660380B1 (de) |
CA (1) | CA2140619C (de) |
DE (1) | DE69418986T2 (de) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5766981A (en) * | 1995-01-04 | 1998-06-16 | Xerox Corporation | Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD |
US5757023A (en) * | 1996-01-25 | 1998-05-26 | National Research Council Of Canada | Fabrication of quantum well polarization independent active devices |
DE19604348C2 (de) * | 1996-02-07 | 2003-10-23 | Deutsche Telekom Ag | Verfahren zur Herstellung einer kalibrierten Längenskala im Nanometerbereich für technische Geräte, die der hochauflösenden bis ultrahochauflösenden Abbildung von Strukturen dienen |
US5815628A (en) * | 1996-04-17 | 1998-09-29 | Nec Corporation | Ordered semiconductor having periodical disorder and devices made therefrom |
JP3387076B2 (ja) * | 1997-01-07 | 2003-03-17 | 住友電気工業株式会社 | 半導体レーザ及びその製造方法 |
SG85604A1 (en) * | 1998-11-06 | 2002-01-15 | Inst Materials Research & Eng | Method of selective post-growth tuning of an optical bandgap of a semi-conductor heterostructure and products produced thereof |
GB2351390A (en) | 1999-06-16 | 2000-12-27 | Sharp Kk | A semiconductor material comprising two dopants |
US6797533B2 (en) * | 2000-05-19 | 2004-09-28 | Mcmaster University | Quantum well intermixing in InGaAsP structures induced by low temperature grown InP |
AU2001252071A1 (en) | 2000-05-19 | 2001-11-26 | Mcmaster University | A method for locally modifying the effective bandgap energy in indium gallium arsenide phosphide (ingaasp) quantum well structures |
GB0018576D0 (en) | 2000-07-27 | 2000-09-13 | Univ Glasgow | Improved semiconductor laser |
AUPR043900A0 (en) * | 2000-09-28 | 2000-10-26 | Australian National University, The | Method of disordering quantum well heterostructures by high energy ion irradiation |
US6878562B2 (en) | 2000-10-20 | 2005-04-12 | Phosistor Technologies, Incorporated | Method for shifting the bandgap energy of a quantum well layer |
FR2818390B1 (fr) * | 2000-12-15 | 2003-11-07 | Ion Beam Services | Guide d'onde comportant un canal sur un substrat optique |
US6984538B2 (en) * | 2001-07-26 | 2006-01-10 | Phosistor Technologies, Inc. | Method for quantum well intermixing using pre-annealing enhanced defects diffusion |
GB2379795B (en) | 2001-09-13 | 2004-02-18 | Univ Glasgow | Method of manufacturing optical devices and related improvements |
US6888666B1 (en) | 2001-11-16 | 2005-05-03 | Dakota Investment Group, Inc. | Dynamically reconfigurable optical amplification element |
US6731850B1 (en) | 2001-11-16 | 2004-05-04 | Fox-Tek | Single-waveguide integrated wavelength demux photodetector and method of making it |
US6628686B1 (en) | 2001-11-16 | 2003-09-30 | Fox-Tek, Inc | Integrated multi-wavelength and wideband lasers |
US6594295B1 (en) | 2001-11-16 | 2003-07-15 | Fox-Tek, Inc. | Semiconductor laser with disordered and non-disordered quantum well regions |
SG99970A1 (en) * | 2002-04-05 | 2003-11-27 | Inst Materials Research & Eng | Method for forming a modified semiconductor having a plurality of band gaps |
US7035305B2 (en) * | 2002-05-10 | 2006-04-25 | Bookham Technology, Plc | Monolithically integrated high power laser optical device |
FR2840689B1 (fr) * | 2002-06-06 | 2004-10-15 | Silios Technologies | Guide d'onde comportant un canal et une couche d'adaptation |
GB2409333B (en) * | 2003-12-10 | 2006-07-26 | Intense Photonics Ltd | Multiple anneal induced disordering |
GB2409572B (en) * | 2003-12-24 | 2006-02-15 | Intense Photonics Ltd | Generating multiple bandgaps using multiple epitaxial layers |
US7804864B2 (en) | 2004-03-31 | 2010-09-28 | Imra America, Inc. | High power short pulse fiber laser |
DE102006046228A1 (de) * | 2006-07-27 | 2008-01-31 | Osram Opto Semiconductors Gmbh | Halbleiter-Schichtstruktur mit Übergitter |
EP1883141B1 (de) * | 2006-07-27 | 2017-05-24 | OSRAM Opto Semiconductors GmbH | LD oder LED mit Übergitter-Mantelschicht |
EP1883140B1 (de) * | 2006-07-27 | 2013-02-27 | OSRAM Opto Semiconductors GmbH | LD oder LED mit Übergitter-Mantelschicht und Dotierungsgradienten |
PL1883119T3 (pl) * | 2006-07-27 | 2016-04-29 | Osram Opto Semiconductors Gmbh | Półprzewodnikowa struktura warstwowa z supersiecią |
JP2009105184A (ja) * | 2007-10-23 | 2009-05-14 | Sharp Corp | 窒化物系半導体レーザ素子とその製造方法 |
US8213751B1 (en) * | 2008-11-26 | 2012-07-03 | Optonet Inc. | Electronic-integration compatible photonic integrated circuit and method for fabricating electronic-integration compatible photonic integrated circuit |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4511408A (en) * | 1982-04-22 | 1985-04-16 | The Board Of Trustees Of The University Of Illinois | Semiconductor device fabrication with disordering elements introduced into active region |
US4871690A (en) * | 1986-01-21 | 1989-10-03 | Xerox Corporation | Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects |
US4771010A (en) * | 1986-11-21 | 1988-09-13 | Xerox Corporation | Energy beam induced layer disordering (EBILD) |
US5238868A (en) * | 1989-11-30 | 1993-08-24 | Gte Laboratories Incorporated | Bandgap tuning of semiconductor quantum well structures |
EP0429979A3 (en) * | 1989-11-30 | 1992-01-29 | Gte Laboratories Incorporated | Bandgap tuning of semiconductor quantum well structures |
-
1993
- 1993-12-23 US US08/172,094 patent/US5395793A/en not_active Expired - Lifetime
-
1994
- 1994-12-12 CA CA002140619A patent/CA2140619C/en not_active Expired - Fee Related
- 1994-12-20 EP EP94309534A patent/EP0660380B1/de not_active Expired - Lifetime
- 1994-12-20 DE DE69418986T patent/DE69418986T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CA2140619C (en) | 2004-05-04 |
CA2140619A1 (en) | 1995-06-24 |
EP0660380B1 (de) | 1999-06-09 |
US5395793A (en) | 1995-03-07 |
EP0660380A2 (de) | 1995-06-28 |
DE69418986T2 (de) | 1999-09-30 |
EP0660380A3 (de) | 1996-01-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |