DE68926471D1 - Supraleitende optoelektronische Einrichtungen - Google Patents

Supraleitende optoelektronische Einrichtungen

Info

Publication number
DE68926471D1
DE68926471D1 DE68926471T DE68926471T DE68926471D1 DE 68926471 D1 DE68926471 D1 DE 68926471D1 DE 68926471 T DE68926471 T DE 68926471T DE 68926471 T DE68926471 T DE 68926471T DE 68926471 D1 DE68926471 D1 DE 68926471D1
Authority
DE
Germany
Prior art keywords
optoelectronic devices
superconducting optoelectronic
superconducting
devices
optoelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68926471T
Other languages
English (en)
Other versions
DE68926471T2 (de
Inventor
Taizo Masumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Tokyo NUC
Original Assignee
University of Tokyo NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63201655A external-priority patent/JPH01315177A/ja
Application filed by University of Tokyo NUC filed Critical University of Tokyo NUC
Publication of DE68926471D1 publication Critical patent/DE68926471D1/de
Application granted granted Critical
Publication of DE68926471T2 publication Critical patent/DE68926471T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/128—Junction-based devices having three or more electrodes, e.g. transistor-like structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/84—Switching means for devices switchable between superconducting and normal states
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/702—Josephson junction present
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/703—Microelectronic device with superconducting conduction line
DE68926471T 1988-03-11 1989-03-09 Supraleitende optoelektronische Einrichtungen Expired - Fee Related DE68926471T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5784488 1988-03-11
JP63201655A JPH01315177A (ja) 1988-03-11 1988-08-12 超伝導オプトエレクトロニクス素子及び超伝導オプトエレクトロニクス装置

Publications (2)

Publication Number Publication Date
DE68926471D1 true DE68926471D1 (de) 1996-06-20
DE68926471T2 DE68926471T2 (de) 1996-11-28

Family

ID=26398929

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68926471T Expired - Fee Related DE68926471T2 (de) 1988-03-11 1989-03-09 Supraleitende optoelektronische Einrichtungen

Country Status (4)

Country Link
US (1) US4990487A (de)
EP (1) EP0332448B1 (de)
CA (1) CA1310391C (de)
DE (1) DE68926471T2 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5219831A (en) * 1988-02-04 1993-06-15 University Of Tokyo Superconductive photoconductive-substance of the La-Cu-O system and a method for producing the same
US5168165A (en) * 1988-02-04 1992-12-01 The University Of Tokyo Superconductive photoconductive-substance of the Y-Ba-Cu-O system and a method for producing the same
JPH06102549B2 (ja) * 1988-08-12 1994-12-14 東京大学長 Ｃａ−Ｓｒ−Ｂｉ−Ｃｕ−Ｏ系酸化物超伝導性光伝導物質及びその製造法
JPH06102548B2 (ja) * 1988-08-12 1994-12-14 東京大学長 Ｂａ−Ｐｂ−Ｂｉ−Ｏ系酸化物超伝導性光伝導物質及びその製造法
DE69009109T2 (de) * 1989-07-05 1994-09-15 Canon Kk Vorrichtung und Verfahren zur Lichtmessung.
JP2503091B2 (ja) * 1990-03-14 1996-06-05 富士通株式会社 超電導光機能素子
JPH065791B2 (ja) * 1990-05-11 1994-01-19 東京大学長 超伝導性光伝導基本物質Ｃｕ２Ｏ系材料を用いた超伝導オプトエレクトロニクス装置
JPH065792B2 (ja) * 1990-08-03 1994-01-19 東京大学長 超伝導性光伝導基本物質Ｂｉ▲下２▼０▲下３▼系材料を用いた超伝導オプトエレクトロニクス装置
US5116807A (en) * 1990-09-25 1992-05-26 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Monolithic MM-wave phase shifter using optically activated superconducting switches
US5328893A (en) * 1991-06-24 1994-07-12 Superconductor Technologies, Inc. Superconducting devices having a variable conductivity device for introducing energy loss
JPH07109905B2 (ja) * 1991-07-16 1995-11-22 東京大学長 Ｂｉ−ＳｒＣａ（ＬａＹ）−Ｃｕ−Ｏ系酸化物超伝導共役性光伝導物質及びその製造法並びにこれを用いた超伝導オプトエレクトロニクス装置
US5768002A (en) * 1996-05-06 1998-06-16 Puzey; Kenneth A. Light modulation system including a superconductive plate assembly for use in a data transmission scheme and method
JP3511098B2 (ja) * 2001-09-14 2004-03-29 独立行政法人産業技術総合研究所 超高速光電気信号変換素子
DE102005018835A1 (de) 2005-04-22 2006-11-02 Degussa Ag Verfahren zur Herstellung von L-Aminosäuren unter Verwendung verbesserter Stämme der Familie Enterobacteriaceae
US20100013559A1 (en) * 2007-02-02 2010-01-21 Max Lee B High frequency amplifying device
DE102007051024A1 (de) 2007-03-05 2008-09-11 Evonik Degussa Gmbh Verfahren zur Herstellung von L-Aminosäuren unter Verwendung von Stämmen der Familie Enterobacteriaceae
EP1975241A1 (de) 2007-03-29 2008-10-01 Evonik Degussa GmbH Verfahren zur Herstellung von L-Aminosäuren unter Verwendung von verbesserten Stämmen der Familie Enterobacteriaceae
DE102007044134A1 (de) 2007-09-15 2009-03-19 Evonik Degussa Gmbh Verfahren zur Herstellung von L-Aminosäuren unter Verwendung von verbesserten Stämmen der Familie Enterobacteriaceae
DE102007052270A1 (de) 2007-11-02 2009-05-07 Evonik Degussa Gmbh Verfahren zur Herstellung von L-Aminosäuren unter Verwendung von verbesserten Stämmen der Familie Enterobacteriaceae
EP2060636A1 (de) 2007-11-14 2009-05-20 Evonik Degussa GmbH Verfahren zur Herstellung von L-Aminosäuren unter Verwendung von verbesserten Stämmen der Familie Enterobacteriaceae
EP2098597A1 (de) 2008-03-04 2009-09-09 Evonik Degussa GmbH Verfahren zur Herstellung von L-Aminosäuren unter Verwendung von verbesserten Stämmen der Familie Enterobacteriaceae
DE102008002309A1 (de) 2008-06-09 2009-12-10 Evonik Degussa Gmbh Verfahren zur Herstellung von L-Aminosäuren unter Verwendung von verbesserten Stämmen der Familie Enterobacteriaceae
DE102008040352A1 (de) 2008-07-11 2010-01-14 Evonik Degussa Gmbh Verfahren zur Herstellung von L-Tryptophan unter Verwendung von verbesserten Stämmen der Familie Enterobacteriaceae
DE102008044768A1 (de) 2008-08-28 2010-03-04 Evonik Degussa Gmbh Verfahren zur Herstellung von organisch-chemischen Verbindungen unter Verwendung von verbesserten Stämmen der Familie Enterobacteriaceae
EP2267145A1 (de) 2009-06-24 2010-12-29 Evonik Degussa GmbH Verfahren zur Herstellung von L-Aminosäuren unter Verwendung von verbesserten Stämmen der Familie Enterobacteriaceae
DE102009030342A1 (de) 2009-06-25 2010-12-30 Evonik Degussa Gmbh Verfahren zur fermentativen Herstellung von organisch chemischen Verbindungen
DE102010003419B4 (de) 2010-03-30 2019-09-12 Evonik Degussa Gmbh Verfahren zur fermentativen Herstellung von L-Ornithin
DE102011006716A1 (de) 2011-04-04 2012-10-04 Evonik Degussa Gmbh Mikroorganismus und Verfahren zur fermentativen Herstellung einer organisch-chemischen Verbindung
EP2762571A1 (de) 2013-01-30 2014-08-06 Evonik Industries AG Mikroorganismus und Verfahren zur fermentativen Herstellung von Aminosäuren
EP3608409A1 (de) 2018-08-09 2020-02-12 Evonik Operations GmbH Verfahren zur herstellung von l-aminosäuren unter verwendung verbesserter stämme aus der familie der enterobacteriaceae
DE102020213681A1 (de) 2020-10-30 2022-05-05 Forschungszentrum Jülich GmbH Elektrolumineszenz keramischer Werkstoffe

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL286177A (de) * 1961-12-01
US4464065A (en) * 1982-08-09 1984-08-07 The United States Of America As Represented By The Secretary Of The Navy Fast granular superconducting bolometer
JPS6065582A (ja) * 1983-09-20 1985-04-15 Nippon Telegr & Teleph Corp <Ntt> 粒界ジヨセフソン接合型光検出素子
DE3373167D1 (en) * 1983-12-28 1987-09-24 Ibm Low temperature tunneling transistor
JPS60253929A (ja) * 1984-05-31 1985-12-14 Shimadzu Corp 赤外線イメ−ジセンサ
JPS61271487A (ja) * 1985-05-27 1986-12-01 Masahiko Kurakado 超伝導トンネル接合を用いた放射線および光入射位置検出器
US4843446A (en) * 1986-02-27 1989-06-27 Hitachi, Ltd. Superconducting photodetector
JPS63241809A (ja) * 1987-03-27 1988-10-07 Sumitomo Electric Ind Ltd 透明導電体
JPS63245973A (ja) * 1987-03-31 1988-10-13 Sumitomo Electric Ind Ltd 超電導素子
US4814598A (en) * 1987-09-03 1989-03-21 Hypres, Inc. Optical wavelength analyzer and image processing system utilizing Josephson junctions

Also Published As

Publication number Publication date
EP0332448A2 (de) 1989-09-13
US4990487A (en) 1991-02-05
DE68926471T2 (de) 1996-11-28
EP0332448A3 (en) 1989-11-23
CA1310391C (en) 1992-11-17
EP0332448B1 (de) 1996-05-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee