DE68926185T2 - Polyimid-Copolymere - Google Patents

Polyimid-Copolymere

Info

Publication number
DE68926185T2
DE68926185T2 DE68926185T DE68926185T DE68926185T2 DE 68926185 T2 DE68926185 T2 DE 68926185T2 DE 68926185 T DE68926185 T DE 68926185T DE 68926185 T DE68926185 T DE 68926185T DE 68926185 T2 DE68926185 T2 DE 68926185T2
Authority
DE
Germany
Prior art keywords
polyimide copolymers
polyimide
copolymers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68926185T
Other languages
English (en)
Other versions
DE68926185D1 (de
Inventor
Yasuharu Yamada
Nobuyuki Furukawa
Masaya Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Chemical and Materials Co Ltd
Original Assignee
Nippon Steel Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP16100288A external-priority patent/JPH0211631A/ja
Priority claimed from JP63242339A external-priority patent/JP2760520B2/ja
Application filed by Nippon Steel Chemical Co Ltd filed Critical Nippon Steel Chemical Co Ltd
Application granted granted Critical
Publication of DE68926185D1 publication Critical patent/DE68926185D1/de
Publication of DE68926185T2 publication Critical patent/DE68926185T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/06—Organic material
    • B01D71/76—Macromolecular material not specifically provided for in a single one of groups B01D71/08 - B01D71/74
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/06—Organic material
    • B01D71/76—Macromolecular material not specifically provided for in a single one of groups B01D71/08 - B01D71/74
    • B01D71/80—Block polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
    • C08G73/106—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing silicon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42—Block-or graft-polymers containing polysiloxane sequences
    • C08G77/452—Block-or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences
    • C08G77/455—Block-or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences containing polyamide, polyesteramide or polyimide sequences
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/303—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups H01B3/38 or H01B3/302
    • H01B3/306—Polyimides or polyesterimides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/06—Organic material
    • B01D71/58—Other polymers having nitrogen in the main chain, with or without oxygen or carbon only
    • B01D71/62—Polycondensates having nitrogen-containing heterocyclic rings in the main chain
    • B01D71/64—Polyimides; Polyamide-imides; Polyester-imides; Polyamide acids or similar polyimide precursors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/06—Organic material
    • B01D71/70—Polymers having silicon in the main chain, with or without sulfur, nitrogen, oxygen or carbon only
DE68926185T 1988-06-30 1989-06-30 Polyimid-Copolymere Expired - Lifetime DE68926185T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP16100288A JPH0211631A (ja) 1988-06-30 1988-06-30 半導体保護用樹脂及び半導体
JP63242339A JP2760520B2 (ja) 1988-09-29 1988-09-29 ポリイミド共重合体及びその製造方法

Publications (2)

Publication Number Publication Date
DE68926185D1 DE68926185D1 (de) 1996-05-15
DE68926185T2 true DE68926185T2 (de) 1996-11-28

Family

ID=26487289

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68926185T Expired - Lifetime DE68926185T2 (de) 1988-06-30 1989-06-30 Polyimid-Copolymere

Country Status (3)

Country Link
US (1) US5094919A (de)
EP (1) EP0349010B1 (de)
DE (1) DE68926185T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2760520B2 (ja) 1988-09-29 1998-06-04 新日鐵化学株式会社 ポリイミド共重合体及びその製造方法
US5008361A (en) * 1990-01-02 1991-04-16 Occidental Chemical Corporation Crystalline polyimidesiloxanes
US5209981A (en) * 1991-06-13 1993-05-11 Occidental Chemical Corporation Polyimidesiloxane extended block copolymers
US5300627A (en) * 1991-10-17 1994-04-05 Chisso Corporation Adhesive polyimide film
US5477360A (en) * 1993-04-23 1995-12-19 Kabushiki Kaisha Toshiba Liquid crystal display device
US5955245A (en) * 1993-10-12 1999-09-21 Occidental Chemical Corporation Method of forming polyimide patterns on substrates
US6218496B1 (en) 1994-03-31 2001-04-17 Occidental Chemical Corporation Polyimidesiloxane adhesive
US5962113A (en) * 1996-10-28 1999-10-05 International Business Machines Corporation Integrated circuit device and process for its manufacture
WO1999036462A1 (en) * 1998-01-16 1999-07-22 Maverick Corporation Low-toxicity, high-temperature polyimides
US6271107B1 (en) 1999-03-31 2001-08-07 Fujitsu Limited Semiconductor with polymeric layer
JP2001247819A (ja) * 2000-03-03 2001-09-14 Dow Corning Toray Silicone Co Ltd 電気絶縁性架橋薄膜形成性有機樹脂組成物、および電気絶縁性架橋薄膜の形成方法
US6252033B1 (en) * 2000-03-20 2001-06-26 Saehan Industries Incorporation Method for the preparation of polyamic acid and polymide useful for adhesives
JP2002012666A (ja) * 2000-06-29 2002-01-15 Shin Etsu Chem Co Ltd ポリイミドシリコーン樹脂、その製造方法およびその組成物
JP3865046B2 (ja) * 2001-05-08 2007-01-10 信越化学工業株式会社 無溶剤型ポリイミドシリコーン系樹脂組成物
JP2004099638A (ja) * 2002-09-04 2004-04-02 Shin Etsu Chem Co Ltd イミドシリコーン樹脂およびその製造方法
EP1739114B1 (de) * 2004-05-20 2008-12-17 Toray Industries, Inc. Polyimidharz, mehrschichtfolie, mehrschichtfolie mit metallschicht und halbleiterelement
KR101244589B1 (ko) * 2005-01-18 2013-03-25 가부시키가이샤 가네카 접착성이 개량된 신규 폴리이미드 필름
MY171613A (en) 2013-12-17 2019-10-21 Evonik Fibres Gmbh Highly-selective polyimide membranes with increased permeance, said membranes consisting of block copolyimides
WO2019065164A1 (ja) * 2017-09-26 2019-04-04 東レ株式会社 ポリイミド前駆体樹脂組成物、ポリイミド樹脂組成物、ポリイミド樹脂膜、積層体の製造方法、カラーフィルタの製造方法、液晶素子の製造方法および有機ｅｌ素子の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3325450A (en) * 1965-05-12 1967-06-13 Gen Electric Polysiloxaneimides and their production
US3740305A (en) * 1971-10-01 1973-06-19 Gen Electric Composite materials bonded with siloxane containing polyimides
US4040874A (en) * 1975-08-04 1977-08-09 General Electric Company Semiconductor element having a polymeric protective coating and glass coating overlay
GB1585477A (en) * 1976-01-26 1981-03-04 Gen Electric Semiconductors
US4140572A (en) * 1976-09-07 1979-02-20 General Electric Company Process for selective etching of polymeric materials embodying silicones therein
JPS5474677A (en) * 1977-11-28 1979-06-14 Hitachi Ltd Surface stabilizing method of semiconcuctor element using polyimide silicone
JPS58218127A (ja) * 1982-06-11 1983-12-19 Hitachi Chem Co Ltd 半導体装置の保護被膜材料用組成物
JPS5956453A (ja) * 1982-09-22 1984-03-31 Nitto Electric Ind Co Ltd 半導体素子保護用組成物
JPS6076533A (ja) * 1983-09-30 1985-05-01 Nitto Electric Ind Co Ltd ポリイミド前駆体の製造方法
JPS6184025A (ja) * 1984-09-29 1986-04-28 Nitto Electric Ind Co Ltd 半導体素子表面への皮膜形成方法
JPS61207438A (ja) * 1985-03-11 1986-09-13 Chisso Corp 可溶性ポリイミドシロキサン前駆体及びその製造方法
JPS62223228A (ja) * 1986-03-25 1987-10-01 Sumitomo Bakelite Co Ltd 耐熱性樹脂の製造方法
JPH0727966B2 (ja) * 1986-07-04 1995-03-29 日立化成工業株式会社 半導体装置

Also Published As

Publication number Publication date
EP0349010A1 (de) 1990-01-03
DE68926185D1 (de) 1996-05-15
US5094919A (en) 1992-03-10
EP0349010B1 (de) 1996-04-10

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